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| PGE 608 31 EDFA Gain Block for DWDM Applications Key Features * Operating wavelength window: 1530-1560 nm * Operating temperature range: -5 C to +70 C (with cooled pump) * Compact size (88 x 70 x 12 mm) Applications * Ideal for Metro DWDM networks, providing up to 13 dBm output power Description This EDFA gain block provides cost effective amplification over the Cband wavelength range. With its simple configuration and very small size it is optimized as a booster for Metro DWDM applications. PGE 608 31 Optical input signal Optical gain Optical output signal 14 pin electrical interface Figure 1. Block diagram Output PGE 608 31 Erbium Doped Fiber Amplifier Input Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Description Thermistor, pump Laser anode TEC neg GND Pump monitor anode NC NC Thermistor, pump Laser cathode TEC pos GND Pump monitor cathode NC NC Figure 2. Mechanical Outline Drawing and Pin Connection 2 12 PGE 608 31 Optical Characteristics Electrical and optical characteristics over recommended operating conditions, unless otherwise noted. Parameter Conditions Symbol Operating Wavelength Input Power Output Power Noise Figure Gain Flatness @ PIL=-6 dBm @ L @ PIL=-6 dBm @ L (Note1) L PIL Pout NF GFLAT Min Typ Max Unit 1530 -9 12 -1 -6 13 6 1560 0 8 1 nm dBm dB dB Note 1. GFLAT=(GMAX-GMIN)/2, where GMAX is the maximum gain for L and GMIN is the minimum gain for L. The gain is measured as dynamic gain under constant saturation between 1540 and 1560 nm. Electrical Characteristics Parameter Conditions Symbol Min Typ Max Unit Operating Current Operating Voltage Power Dissipation Thermistor Resistance TEC Current TEC Voltage IDRIVE VF PE RTH ITEC VTEC 9.5 10 720 2.5 7 10.5 1.2 3.3 mA V W k A V Recommended Operating Conditions Parameter Symbol Min Typ Max Operating Case Temperature TCase -5 70 C Unit Absolute Maximum Ratings Parameter Symbol Min Max Storage Temperature Drive Current Tstg ILD_MAX -40 75 800 C mA Unit CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 3 PGE 608 31 Handling Precautions This device may be damaged as a result of electrostatic discharge (ESD). Take proper precautions during both handling and testing. This typically includes grounded wrist wraps, workbenches and floor mats in ESD controlled areas. Semiconductor devices may be damaged by current surges, use appropriate transient protection. Quality Assurance Ericsson Microelectronics commitment to quality has been proven through a decade of semiconductor device production and has been confirmed to ISO 9001. Opto product qualification is made according to the intention of applicable Telcordia standards. Connector Options SC/PC (Other connectors available on request) DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM WAVELENGTH 1300 nm - 1600 nm CLASS 3B LASER Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson Microelectronics. These products are sold only according to Ericsson Microelectronics' general conditions of sale, unless otherwise confirmed in writing. Product specifications subject to change without notice. Ericsson Microelectronics SE-164 81 Kista, Sweden Telephone: +46 8 757 50 00 www.ericsson.com/microelectronics For local sales contacts, please refer to our website or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76 1522-PGE 608 31 Rev. D (c) Ericsson Microelectronics AB, March 2001 4 |
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