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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2502
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA2502, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers.
0.65 TYP.
PACKAGE DRAWING (Unit: mm)
* PA2502 has a thin surface mount package with a heat spreader. The land size is same as 8-pin TSSOP. * Low on-state resistance RDS(on)1 = 12.0 m MAX. (VGS = 10.0 V, ID = 7.0 A) RDS(on)2 = 18.0 m MAX. (VGS = 4.5 V, ID = 7.0 A)
0.25 -0.05
0.10 M
FEATURES
1 2 3 4
+0.1
8 7 6 5
5.8 0.1 6.4 0.1
0.17 0.05 0.8 MAX.
3.15 0.15
3 0.1
0.10 S
ORDERING INFORMATION
PART NUMBER PACKAGE 8PIN HWSON
0.75 0.15 4.15 0.2 0.85 0.15
2.2 0.2
0 -0
+0.05
* Low Ciss: 760 pF TYP. (VDS = 10.0 V, VGS = 0 V)
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
PA2502TM
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30.0 20.0 13.0 52.0 2.7 150 -55 to +150 13.0 16.9
V V A A W C C A mJ
Gate Protection Diode Source Gate
Drain Current (pulse)
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation Channel Temperature Storage Temperature
Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Body Diode
Notes 1. Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW 10 sec 2. PW 10 s, Duty Cycle 1% 3. Starting Tch = 25C, VDD = 15.0 V, RG = 25 , VGS = 20.0 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16681EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan
2004
PA2502
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30.0 V, VGS = 0 V VGS = 20.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 7.0 A VGS = 10.0 V, ID = 7.0 A VGS = 4.5 V, ID = 7.0 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 15.0 V, ID = 7.0 A VGS = 10.0 V RG = 10
MIN.
TYP.
MAX. 1.0 10.0
UNIT
A A
V S
1.50 5 9.3 13.1 760 300 100 14 3 32 4
2.50
Drain to Source On-state Resistance
12.0 18.0
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 15.0 V VGS = 5.0 V ID = 13.0 A IF = 13.0 A, VGS = 0 V IF = 13.0 A, VGS = 0 V di/dt = 100 A/s
8.5 2.8 3.5 0.84 27 24
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G16681EJ1V0DS
PA2502
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 100 10 1 0.1
Single pulse Mounted on FR-4 board of 25 cm2 x 1.6 mm RDS(on) Limited (at VGS = 10 V) ID(pulse)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 PT - Total Power Dissipation - W 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW 10 sec
ID - Drain Current - A
ID(DC)
PW = 1 ms
10 ms 30 ms 10 s
0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000
100
10
1 Single pulse Mounted on FR-4 board of 25 cm2 x 1.6 mm 0.1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet G16681EJ1V0DS
3
PA2502
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 Pulsed 50 ID - Drain Current - A 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 2.4 VGS(off) - Gate Cut-off Voltage - V VDS = 10.0 V ID = 1.0 mA 2.0 100 VDS = 10.0 V Pulsed 10 TA = -25C 25C 75C 125C ID - Drain Current - A VGS = 10.0 V 4.5 V 10 1 0.1 0.01 0.001 1 2 3 4 5 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10.0 V Pulsed
TA = 125C 75C 25C -25C
1.6
1
1.2
0.1
0.8 -50 0 50 100 150 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 Pulsed 20 VGS = 4.5 V 15 10 5 0 0.1 1 10 100 ID - Drain Current - A 10.0 V
0.01 0.01
0.1
1
10
100
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 25 20 15 10 5 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V ID = 7.0 A Pulsed
RDS(on) - Drain to Source On-state Resistance - m
4
Data Sheet G16681EJ1V0DS
RDS(on) - Drain to Source On-state Resistance - m
PA2502
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 20 15 10 5 0 -50 0 50 100 150 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = 15.0 V VGS = 10.0 V RG = 10 100 td(off) td(on) 10 tf tr 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IAS - Single Avalanche Current - A IF - Diode Forward Current - A VGS = 0 V Pulsed 10 100 Ciss, Coss, Crss - Capacitance - pF ID = 7.0 A Pulsed VGS = 4.5 V 10.0 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1.0 MHz 1000
RDS(on) - Drain to Source On-state Resistance - m
Ciss Coss
100
Crss
10 0.1 1 10 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS
6 ID = 13.0 A 5 4 3 2 1 0 0 4 8 12
QG - Gate Charge - nC SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
VDD = 6.0 V 15.0 V 24.0 V
IAS = 13.0 A 10 EAS = 16.9 mJ
1
1
0.1
VDD = 15.0 V RG = 25 VGS = 20.0 0 V Starting Tch = 25C 0.1 1 10
0.01 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V
0.1 0.01
L - Inductive Load - mH
Data Sheet G16681EJ1V0DS
5
PA2502
EXAMPLE OF THE LAND PATTERN
Please optimize the land pattern in consideration of density, appearance of solder fillets, common difference, etc in an actual design.
l3 e1: 0.65 b2: 0.35 b3: 2.7 l1: 1.3 l2: 3.7 l3: 7.1 (Unit: mm) l1 l2
e1 b3
b2
6
Data Sheet G16681EJ1V0DS
PA2502
* The information in this document is current as of September, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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