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| 2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5130 600 400 10 5(Pulse10) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 10max 400min 10 to 30 0.5max 1.3max 20typ 30typ (Ta=25C) 2SC5130 Unit A 16.90.3 V V V 8.40.2 A 13.0min MHz pF 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 2.54 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.3 ton (s) 1max tstg (s) 2max tf (s) 0.3max 3.9 BCE 0.2 IC - VCE Characteristics (Typical) 800 mA VCE(sat)-IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 1.5 I C /I B= 5 Const. I C - VBE Temperature Characteristics (Typical) (VCE=4V) 5 5 50 0m A Collector Current I C (A) 30 0m A 1.0 3 Collector Current I C( A) 4 4 3 15 0m A 2 p) 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. mp) e Te (Cas 0 0 1 2 3 4 0 0.01 -55C (Case Temp) 0.05 0.1 0.5 1 5 0 0 0.2 0.4 125 0.6 25C 1 0.8 -55C 1 C ( I B =50mA 25C (Case Temp) (Case Cas 0.5 eT 125C (Case Temp) 2 Temp em ) 1.0 1. 2 1.4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 DC C urrent G ain h FE 2 j - a( C/W) hFE - IC Characteristics (Typical) t on*t s t g *t f ( s) 125C 25C ton*t stg * tf - IC Characteristics (Typical) j-a - t Characteristics 5 1 Swi tchi ng T im e -55C 0.5 t on tf 0.1 0.1 V C C 200V I C: I B 1: -I B2= 10:1:2 0.5 1 3 Transient Thermal Resistance tstg 1 10 5 0.01 0.05 0.1 0.5 1 5 0.5 0.4 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 10 Reverse Bias Safe Operating Area 20 30 P c - T a Derating 5 Collecto r Cur ren t I C( A) 0 Co lle ctor Cu rre nt I C( A) s 5 Maximu m Power Dissi pation P C ( W) 50 s 10 W ith 20 In fin ite he at si 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH -IB2=0.5A Duty:less than 1% nk 10 Without Heatsink Natural Cooling Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 129 |
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