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| Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1154 21.00.5 15.00.3 11.00.2 5.00.2 (3.2) Features * Low collector-emitter saturation voltage VCE(sat) * Satisfactory linearity of forward current transfer ratio hFE * Large collector current IC * Full-pack package which can be installed to the heat sink with one screw 3.20.1 15.00.2 (3.5) Solder Dip 2.00.2 1.10.1 2.00.1 0.60.2 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 130 80 7 10 20 70 3.0 150 -55 to +150 C C Unit V V V A A W 16.20.5 5.450.3 10.90.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage * Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 3 A VCE = 2 V, IC = 6 A IC = 6 A, IB = 0.3 A IC = 10 A, IB = 1 A IC = 6 A, IB = 0.3 A IC = 10 A, IB = 1 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 6 A, IB1 = 0.6 A, IB2 = - 0.6 A VCC = 50 V Min 80 Typ Max Unit V A A 10 50 45 90 30 0.5 1.5 1.5 2.5 20 0.5 2.0 0.2 260 hFE3 VCE(sat)1 VCE(sat)2 Base-emitter saturation voltage VBE(sat)1 VBE(sat)2 Transition frequency Turn-on time Storage time Fall time fT ton tstg tf V V MHz s s s Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260 SJD00210BED Publication date: September 2003 1 2SD1705 PC Ta 120 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=3.0W) IC VCE Collector-emitter saturation voltage VCE(sat) (V) 20 TC=25C IB=400mA VCE(sat) IC 10 (1) IC/IB=10 (2) IC/IB=20 TC=25C Collector power dissipation PC (W) 100 16 80 (1) Collector current IC (A) 12 250mA 200mA 160mA 120mA 100mA 80mA 60mA 40mA 20mA 1 (2) 60 (1) 8 40 0.1 20 4 (2) (3) 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 0.01 0.1 1 10 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 VBE(sat) IC 100 hFE IC IC/IB=10 Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 VCE=2V 1 000 10 Forward current transfer ratio hFE 1 TC=100C TC=100C 25C 100 -25C 1 TC=-25C 100C 25C 25C 0.1 -25C 10 0.1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 1 0.1 1 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT I C Turn-on time ton , Storage time tstg , Fall time tf (s) 1 000 VCE=10V f=1MHz TC=25C ton , tstg , tf IC 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=-IB2) VCC=50V TC=25C Safe operation area 100 Non repetitive pulse TC=25C ICP t=10ms Transition frequency fT (MHz) Collector current IC (A) 100 10 tstg 10 IC t=1ms DC 10 1 ton tf 1 1 0.1 0.1 0.1 0.01 0.01 0.1 1 10 0 2 4 6 8 0.01 1 10 100 1 000 Collector current IC (A) Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00210BED 2SD1705 Rth t 104 Note: Rth was measured at Ta=25C and under natural convection. (1)PT=10Vx0.2A(2W) and without heat sink (2)PT=10Vx1.0A(10W) and with a 100x100x2mm Al heat sink Thermal resistance Rth (C/W) 103 102 (1) 10 (2) 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00210BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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