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VISHAY BY203/..S Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features * Glass passivated junction * Hermetically sealed package Applications Fast rectification and switching avalanche sinterglass diode for TV-line output circuits and switch mode power supply Mechanical Data Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any 949539 Weight: 370 mg, (max. 500 mg) Parts Table Part BY203-12S BY203-16S BY203-20S Type differentiation VR = 1200 V; IFAV = 250 mA VR = 1600 V; IFAV = 250 mA VR = 2000 V; IFAV = 250 mA SOD57 SOD57 SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage IR = 100 A IR = 100 A IR = 100 A Average forward current Peak forward surge current Junction temperature range Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A tp = 10 ms half sinewave Test condition Sub type BY20312S BY20316S BY20320S Symbol VR = VRRM VR = VRRM VR = VRRM IFAV IFSM Tj Tstg ER Value 1200 1600 2000 250 20 -55 to +150 -55 to +175 10 Unit V V V mA A C C mJ Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant maximum lead length Sub type Symbol RthJA RthJA Value 45 100 Unit K/W K/W Document Number 86002 Rev. 5, 07-Jan-03 www.vishay.com 1 BY203/..S Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 200 mA, tp/T = 0.01, tp = 0.3 ms VR = 700 V VR = 1000 V VR = 1200 V Breakdown voltage BY203-12S BY203-16S BY203-20S Sub type Symbol VF IR IR IR V(BR) V(BR) V(BR) trr 1200 1600 2000 Min Typ. VISHAY Max 2.4 2 2 2 Unit V A A A V V V IR = 100 A, tp/T = 0.01, tp = 0.3 ms BY203-12S IR = 100 A, tp/T = 0.01, tp = 0.3 ms BY203-16S IR = 100 A, tp/T = 0.01, tp = 0.3 ms BY203-20S Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A 300 ns Typical Characteristics (Tamb = 25 C unless otherwise specified) 240 T j - Junction Temperature ( C ) 0.30 200 160 120 80 BY203/12 40 BY203/16 0 BY203/20 I FAV - Average Forward Current ( A ) 0.25 0.20 0.15 0.10 0.05 0.00 VR=VRRM half sinewave 0 RthJA=45K/W l=10mm VRRM VR RthJA=100K/W PCB: d=25mm 94 9080 1600 0 400 800 1200 VR,VRRM - Reverse / Repetitive Peak Reverse Voltage ( V ) 16398 30 60 90 120 Tamb - Ambient Temperature ( C ) 150 Figure 1. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage Figure 3. Max. Average Forward Current vs. Ambient Temperature 10.000 1000 VR = VRRM I F - Forward Current ( A) 1.000 Tj=175C Tj=25C IR - Reverse Current ( mA ) 100 0.100 10 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 16397 1 25 16399 50 75 100 125 150 VF - Forward Voltage ( V ) Tj - Junction Temperature ( C ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86002 Rev. 5, 07-Jan-03 VISHAY BY203/..S Vishay Semiconductors PR - Reverse Power Dissipation ( mW ) 500 VR = VRRM 400 300 200 100 0 25 PR-Limit @100%VR PR-Limit @80%VR CD - Diode Capacitance ( pF ) 18 16 14 12 10 8 6 4 2 0 50 75 100 125 Tj - Junction Temperature ( C ) 150 16401 f=1MHz 0.1 16400 1.0 10.0 VR - Reverse Voltage ( V ) 100.0 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86002 Rev. 5, 07-Jan-03 www.vishay.com 3 BY203/..S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86002 Rev. 5, 07-Jan-03 |
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