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| E2Q0013-27-X3 electronic components This version: Jan. 1998 Previous version: Jun. 1996 KGF1156 electronic components KGF1156 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1156 is a small-signal UHF-band amplifier that features high output power, high gain, low noise, and low current operation. The KGF1156 specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the dual gate configuration, high output, high gain, low noise, and low operating current, the KGF1156 is ideal as a receiver mixer for personal handy phones. FEATURES * High output power: 6 dBm (min.) * High linear gain: 15 dB (min.) * Low current operation: 6 mA (max.) * Low noise: 3 dB (max.) * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Package material 1.90.1 2.80.15 0.125 +0.03 -0 Epoxy resin 42 alloy Solder plating 5 mm or more Lead frame material Pin treatment Solder plate thickness (Unit: mm) 1/7 electronic components KGF1156 MARKING (4) (3) MXX (1) (2) NUMERICAL ALPHABETICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND CIRCUIT G(2) G(1) D(3) GND(4) 2/7 electronic components KGF1156 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = 25C -- -- Unit V V mA mW C C Min. -- -3.0 -- -- -- -45 Max. 7.0 0.4 60 200 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Operating current Gate-source cut-off voltage Noise figure Linear gain Output power Symbol IGSS IGDO IDS(off) ID VGS(off) F GLIN PO Condition VGS(1,2) = -3 V VGD(1,2) = -8 V VDS = 3 V, VGS(1,2) = -2.5 V (*1), PIN = -20 dBm VDS = 3 V, IDS = 120 mA (*1) (*1), PIN = -20 dBm (*2), PIN = -3 dBm Unit mA mA mA mA V dB dB dBm Min. -- -- -- -- -2.0 -- 15.0 6.0 Typ. -- -- -- -- -- -- -- -- Max. 12 60 120 6.0 -1.0 3.0 -- -- *1 Self-bias condition: VDD = 5.0 V0.25 V, VG1 = 0 V, VG2 = 1.0 V, f = 850 MHz *2 Self-bias condition: VDD = 5.0 V0.25 V, VG1 = 0 V, VG2 = 1.5 V, f = 850 MHz 3/7 electronic components KGF1156 RF CHARACTERISTICS 4/7 electronic components Typical S Parameters KGF1156 VDD = 5 V, VG1 = 0 V, VG2 = 1 V, ID = 3.45 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.006 1.004 0.999 0.993 0.987 0.983 0.975 0.965 0.958 0.945 0.938 0.926 0.913 0.900 0.887 0.871 0.861 0.847 0.830 0.812 0.795 0.776 0.759 0.741 0.728 0.709 -11.82 -14.16 -16.46 -18.92 -21.33 -23.66 -26.09 -28.46 -30.78 -33.11 -35.49 -37.80 -40.00 -42.39 -44.60 -46.76 -48.98 -51.17 -53.28 -55.29 -57.37 -59.34 -61.20 -63.08 -64.59 -66.24 1.659 1.671 1.674 1.684 1.689 1.699 1.697 1.709 1.700 1.712 1.729 1.731 1.730 1.741 1.743 1.763 1.769 1.767 1.771 1.768 1.777 1.762 1.789 1.777 1.783 1.785 170.20 165.31 160.78 156.27 152.35 148.07 143.94 140.23 136.62 132.59 128.78 125.12 121.32 117.25 113.22 109.51 105.94 101.30 97.56 93.63 89.55 85.37 81.01 77.33 72.83 68.76 0.005 0.005 0.006 0.006 0.006 0.007 0.008 0.009 0.009 0.009 0.009 0.008 0.009 0.009 0.010 0.009 0.009 0.009 0.009 0.010 0.010 0.010 0.011 0.013 0.015 0.017 74.34 75.15 77.69 84.33 75.44 76.22 77.78 76.68 73.17 79.47 78.44 82.11 79.45 84.64 87.69 92.88 93.67 98.33 110.97 110.61 118.86 125.43 141.77 137.75 149.96 151.86 0.957 0.956 0.956 0.957 0.955 0.957 0.957 0.957 0.957 0.956 0.958 0.960 0.963 0.964 0.965 0.966 0.969 0.975 0.977 0.984 0.982 0.993 0.994 1.004 1.010 1.012 -6.73 -7.78 -8.94 -10.16 -11.57 -12.62 -13.86 -15.10 -16.31 -17.36 -18.58 -19.78 -20.80 -22.32 -23.43 -24.46 -25.91 -26.73 -28.12 -29.21 -30.65 -31.97 -33.04 -34.61 -35.82 -37.15 5/7 electronic components Typical S Parameters KGF1156 VDD = 5 V, VG1 = 0 V, VG2 = 1 V, ID = 3.45 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 electronic components Test Circuit and Bias Configuration for KGF1156 at 850 MHz RG2 VG2 (2) CC IN T3 RG1 C1 CB T1 T2 (1) KGF 1156 KGF1156 (3) (4) T7 T4 T5 T6 C2 CC OUT RFC VDD CB CF T1: Z0 = 110 W, E = 25 deg T4: Z0 = 110 W, E = 7 deg T2: Z0 = 110 W, E = 27 deg T5: Z0 = 110 W, E = 35 deg T3 : Z0 = 65 W, E = 16 deg T6: Z0 = 65 W, E = 16 deg T7 : Z0 = 110 W, E = 6 deg C1 = 0.10 pF, C2 = 1.05 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 200 nH, RG1 = 1000 W, RG2 = 750 W 7/7 |
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