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| KSC5025 KSC5025 High Voltage and High Reliabilty * High Speed Switching * Wide SOA 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 800 500 7 15 25 4 100 150 - 55 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 5A, IB1 = -IB2 = 2A L = 500H, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1.2A VCC = 200V IC = 5IB1 = -2. 5I B2 = 7A RL = 28.6 160 18 0.5 3 0.3 15 8 Min. 800 500 7 500 10 10 50 1 1.5 V V pF MHz s s s Typ. Max. Units V V V V A A hFE Classificntion Classification hFE1 R 15 ~ 30 O 20 ~ 40 Y 30 ~ 50 (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5025 Typical Characteristics 16 1000 VCE = 5V 14 IC[A], COLLECTOR CURRENT 10 8 6 4 IB = 1.2A IB = 1A IB = 800mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA IB = 100mA IB = 50mA IB = 20mA 0 2 4 6 8 10 12 hFE, DC CURRENT GAIN 12 IB = 1.4A 100 10 2 0 1 0.01 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 16 IC = 5 IB 14 VCE = 5V IC[A], COLLECTOR CURRENT 1 10 100 12 1 VBE(sat) 10 8 6 0.1 VCE(sat) 4 2 0.01 0.01 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 IC=5.IB tSTG IC(max).(Pulse) 50s s 1m IC[A], COLLECTOR CURRENT tON, tSTG, tF [s], TIME 10 IC(max) 10 m s DC 0 10 s 1 tON tF 0.1 1 0.1 0.01 0.1 0.01 1 10 100 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5025 Typical Characteristics (Continued) 100 140 IB2 = -2A L = 100H 120 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION 100 80 1 60 40 0.1 20 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5025 Package Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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