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| Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka Band HPA Key Features * 0.25 um pHEMT Technology * 23 dB Nominal Gain * 34.5 dBm Nominal P1dB * 40 dBm IMD3 Typical * Bias 6 V @ 2.1 A Primary Applications * Satellite Ground Terminal * Point-to-Point Radio Chip Dimensions 4.3 mm x 3.0 mm x 0.05 mm Fixtured Data Bias Conditions: Vd = 6V, Id = 2.1A 5% Product Description 27 The TriQuint TGA4501-SCC is a compact 3 Watt High Power Amplifier MMIC for Ka-band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. The TGA4501 provides a nominal 34.5 dBm of output power at 1 dB gain compression from 24-31 GHz with a small signal gain of 23 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and LMDS. The TGA4501-SCC is 100% DC and RF tested on-wafer to ensure performance compliance. 25 23 21 Gain (dB) 19 17 15 13 11 9 7 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) 37 35 Pout @ P1dB (dBm) 33 31 29 27 25 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs TABLE I MAXIMUM RATINGS Symbol V I + Parameter 5/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 8V -5V TO 0V 3.0 A 62 mA 24 dBm 18.4 W 150 C 320 0C -65 to 150 0C 0 Notes 4/ 4/ V+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 7.4 E+6 to 4.6 E+5 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. 3/ 4/ 5/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs TABLE II DC PROBE TEST (TA = 25 C, nominal) NOTES 1/ 1/ 1/, 2/ 1/, 2/ 1/, 2/ SYMBOL MIN LIMITS MAX UNITS 70.5 79.5 1.5 30 30 mA mS V V V IDSS(Q35) GM (Q35) |VP(Q1, Q2, Q35)| |VBVGS(Q35)| |VBVGD(Q35)| 15 33 0.5 8 11 1/ Q35 is a 150 um Test FET 2/ VP, VBVGD, and VBVGS are negative. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs TABLE III RF CHARACTERIZATION TABLE (TA = 25C, nominal) (Vd = 6V, Id = 2.1A 5%) SYMBOL PARAMETER TEST CONDITION F = 24-31 GHz LIMITS MIN TYP MAX 18 23 UNITS Gain Small Signal Gain dB IRL Input Return Loss F = 24-31 GHz --- -6 ---- dB ORL Output Return Loss F = 24-31 GHz --- -12 --- dB PWR Output Power @ P1dB IMR3 @ SCL = P1dB - 10dB F = 27-31 GHz 34 35 --- dBm IMR3 F = 30 GHz --- 29 --- dBc IMD3 Output IMD3 F = 30 GHz Pin = 0 dBm --- 40 --- dBc Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE IV THERMAL INFORMATION* Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6V ID = 2.048 A Pdiss = 12.288 W TCH (oC) 127.65 RJC (C/W) 4.69 TM (HRS) 7.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model analysis. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A 5% 27 25 23 21 Gain (dB) 19 17 15 13 11 9 7 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) 37 35 Pout @ P1dB (dBm) 33 31 29 27 25 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A 5% 0 -2 Input Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 -18 -20 23 24 25 26 27 28 29 30 31 32 Fre que ncy (GHz) 0 -2 -4 -6 -8 -1 0 -1 2 -1 4 -1 6 -1 8 -2 0 -2 2 -2 4 -2 6 -2 8 23 24 25 26 27 28 29 30 31 32 Output Return Loss (dB) F req u en cy (G Hz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A 5% 50 45 40 35 f = 27 G Hz f = 28 G Hz f = 29 G Hz f = 30 G Hz IMD3 (dBc) 30 25 20 15 10 5 0 16 18 20 22 24 26 28 30 32 F u n d a m e n ta l O u tp u t P o w e r/to n e (d B m ) Fixured Data taken @ 30 GHz 43 OIP3 40 Pout (dBm), OIP3 (dBm) 37 Gain 34 31 19 28 25 22 19 -6 -4 -2 0 2 4 6 8 10 12 14 16 Pin (dBm) Pout 18 17 16 15 23 22 21 20 Gain (dB) 7 24 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Recommended Chip Assembly & Bonding Diagram Both-Sided Biasing Option GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Alternative Chip Assembly & Bonding Diagram Single-Side Biasing Option GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9 Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Mechanical Drawing 4.126 (0.162) 0.190 (0.007) 0.328 (0.013) 0.679 (0.027) 2.085 (0.082) 3.185 (0.125) 1.754 (0.069) 1.932 (0.076) 3.737 (0.147) 4.157 (0.164) 10 2.884 (0.114) 11 1.522 (0.060) 0.135 (0.005) 20 19 18 17 16 15 14 13 12 0.119 (0.004) 4.123 (0.162) 4.290 (0.169) 3.019 (0.112) 2 2.900 (0.114) 3 4 5 6 7 8 9 1 1.500 (0.059) 0.136 (0.005) 0.114 (0.004) 0.000 (0.000) 0.000 (0.000) 2.096 (0.083) 3.210 (0.126) 0.135 (0.005) 0.182 (0.007) 0.316 (0.012) 0.681 (0.027) 1.748 (0.069) Vv)AAHvyyvrrAvpur Uuvpxr)A$A!ArsrrprAy 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAiqAhq 8uvAvrAA$A! BI9ADTA768FTD9@APAAHHD8 Note: RF Ground is backside of MMIC 7qAhqAAE 7qAhqAAE AAAAAAAAAAA AAAAAAAAAA SAADAAAAAA SAAPAAAAA 98ABI9AAAAAAAA WB AAAAAAAAAAA W9 %A AAAAAAAAAAA WB!AAAAAAAAAAA 98ABI9AAAAAAAA W9!AAAAAAAAA WB"AAAAAAAAA W9"AAAAAAAAA "AA!$A$AA' "AA!$A$AA' !AA $A#AA# '$AA'$A"AA" $AA $A#AA# AA A#AA# AA $A#AA# 7qAhqAAE!A!AAAAAAA 7qAhqAAE"A (AAAAAAA 7qAhqAAE#A 'AAAAAAA 7qAhqAAE$A &AAAAAAA 7qAhqAAE%A&A $A 7qAhqAAE'A #AAAAAAA 7qAhqAAE(A "AAAAAAA 7qAhqAAE A !AAAAAAA 1.932 (0.076) "AA "A$AA$ '$AA'$AA"AA" !"AA "A(AA$ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 10 3.711 (0.146) Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 11 |
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