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Product Data Sheet
6 - 18 GHz Power Amplifier
TGA8014-SCC
Key Features and Performance
* * * * * * 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration Unconditionally Stable 3.6068 x 1.9304 x 0.1016 mm (0.142 x 0.076 x 0.004 in.)
Description
The TriQuint TGA8014-SCC is a two-stage GaAs monolithic medium power amplifier. Reactively matched 914 um and 1219 um FETS provide 11 dB nominal gain with 16 percent typical power-added efficiency and output power at 1 dB gain compression of 0.5 watt. Ground is provided to the circuitry through vias to the backside metallization. The small size and inherent reliability advantages of a monolithic device over a hybrid design make this device attractive for use in a variety of military applications. Used in a balanced configuration, the TGA8014-SCC effectively addresses applications such as driver and power stages in EW amplifiers, local oscillator buffers, and TWT replacement amplifiers. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermcompression and thermosonic wirebonding processes. The TGA8014-SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8014-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet TGA8014-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet TGA8014-SCC
TYPICAL S-PARAMETERS
F R EQUENC Y (GHz) M AG
S 11 ANG M AG
S 21 ANG M AG
S 12 ANG M AG
S 22 ANG
GAIN (dB)
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0
0.55 0.58 0.66 0.73 0.77 0.79 0.79 0.79 0.80 0.81 0.82 0.84 0.85 0.87 0.86 0.85 0.82 0.76 0.68 0.60 0.55 0.52 0.47 0.47 0.46
176 173 168 160 150 142 134 127 120 113 105 97 87 77 66 54 40 27 14 6 -4 -16 -26 -43 -69
3.55 3.69 3.73 3.98 4.25 4.36 4.31 4.09 3.81 3.55 3.39 3.32 3.32 3.40 3.49 3.70 3.89 3.92 3.78 3.59 3.43 3.32 3.28 3.39 3.50
29 -34 -80 -120 -159 163 127 93 62 33 8 -18 -42 -68 -94 -121 -151 178 146 118 89 59 32 1 -34
0.002 0.005 0.006 0.008 0.010 0.010 0.009 0.008 0.006 0.005 0.004 0.004 0.004 0.005 0.006 0.010 0.011 0.012 0.014 0.014 0.015 0.010 0.009 0.017 0.017
167 150 135 119 96 77 54 33 10 -10 -42 -82 -122 -133 -152 180 155 136 111 78 39 -8 -4 -40 -82
0.36 0.41 0.48 0.55 0.58 0.57 0.52 0.45 0.40 0.38 0.36 0.36 0.36 0.37 0.37 0.40 0.42 0.42 0.38 0.31 0.28 0.27 0.23 0.23 0.25
4 -35 -73 -105 -135 -160 179 164 153 143 131 119 105 87 70 52 30 8 -13 -27 -37 -51 -68 -88 -119
11.0 11.3 11.4 12.0 12.6 12.8 12.7 12.2 11.6 11.0 10.6 10.4 10.4 10.6 10.8 11.4 11.8 11.9 11.6 11.1 10.7 10.4 10.3 10.6 10.9
TA = 25oC, V+ = 8 V, I+ = 50% IDSS Reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram." The S-parameters are also available on floppy disk and the world wide web.
RF CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
TYP
UNIT
Gp SWR (in) SWR (out) P 1dB IP 3
Pow er gain Input s ta nding w a ve ratio Output s ta nding w ave ratio Output pow er at 1-dB ga in compre s s ion Output third-orde r inte rce pt point
f = 6 to 18 GHz
11
dB * dBm dBm
f = 6 to 18 GHz 4.5:1 f = 6 to 18 GHz 2.2:1 f = 6 to 18 GHz f = 10 GHz f = 18 GHz 27 36.7 36.7
TA = 25oC, V+ = 8 V, I+ = 50% IDSS * The TGA8014-SCC is intended strictly for use in a balanced configuration.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8014-SCC
THERMAL INFORMATION
P A R A M E TE R
TE S T C O N D IT IO N
N O M UN IT
R J C
The rmal res is ta nc e (channe l to bac ks ide ) V + = 8 V, I+ = 50% IDS S
30
C/W
EQUIVALENT SCHEMATIC
RECOMMENDED ASSEMBLY DIAGRAM
________
RF connections: Bond two 1-mil diameter, 25-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability. Refer to TriQuint's Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet TGA8014-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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