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| 6 - 20 GHz High-Gain Amplifier Technical Data HMMC-5620 Features * Wide-Frequency Range: 6 - 20 GHz * High Gain: 17 dB * Gain Flatness: 1.0 dB * Return Loss: Input -15 dB Output -15 dB * Single Bias Supply Operation * Low DC Power Dissipation: PDC ~ 0.5 Watts * Medium Power: 20 GHz: P-1dB: 12 dBm Psat: 13 dBm Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1410 x 1010 m (55.5 x 39.7 mils) 10 m ( 0.4 mils) 127 15 m (5.0 0.6 mils) 80 x 80 m (2.95 x 2.95 mils), or larger Absolute Maximum Ratings[1] Symbol VDD IDD PDC Pin Tch Tcase TSTG Tmax Parameters/Conditions Positive Drain Voltage Total Drain Current DC Power Dissipation CW Input Power Operating Channel Temp. Operating Case Temp. Storage Temperature Maximum Assembly Temp. (for 60 seconds maximum) Units V mA watts dBm C C C C -55 -65 +165 +300 Min. Max. 7.5 135 1.0 20 +160 Description The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of 0.3 m. The HMMC-5620 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25C except for Tch, TSTG, and Tmax. 5965-5442E 6-70 HMMC-5620 DC Specifications/Physical Properties[1] Symbol IDD IDD ch-bs Parameters and Test Conditions Drain Current (VDD = +5.0 V) Drain Current (VDD = +7.0 V) Thermal Resistance (Tbackside = 25C) Units mA mA C/W Min. 70 Typ. 100 105 70 Max. 135 Note: 1. Measured in wafer form with Tchuck = 25C. (Except ch-bs). HMMC-5620 RF Specifications/Physical Properties VDD = 5.0 V, IDD(Q) = 100 mA, Zin =Zo = 50 [1] Symbol BW S 21 S 21 RL in RL out S 12 P-1dB Psat H2 H3 NF Parameters and Test Conditions Guaranteed Bandwidth Small Signal Gain Small Signal Gain Flatness Input Return Loss Output Return Loss Reverse Isolation Output Power @ 1 dB Gain Compression Saturated Output Power Second Harmonic Power Level (6 < o < 20) Po(o) = 10 dBm Third Harmonic Power Level (6 < o < 20) Po(o) = 10 dBm Noise Figure Units GHz dB dB dB dB dB dBm dBm dBc dBc dB Min. 6 15 Typ. 17 1.0 -15 -15 -55 12 13 -30 -40 9.0 Max. 20 21 1.25 -10 -10 Note: 1. Small-signal data measured in wafer form with Tchuck = 25C. Large-signal data measured on individual devices mounted in an HP83040 Series Modular Microcircuit Package at TA = 25C. 6-71 HMMC-5620 Applications The HMMC-5620 amplifier is designed for use as a general purpose wideband, high gain stage in communication systems and microwave instrumentation. It is ideally suited for broadband applications requiring high gain and excellent port matches over a 6 to 20 GHz frequency range. Both RF input and output ports are AC-coupled on chip. other bias supplies or connections to the device are required for 6 to 20 GHz operation. See Figure 3 for assembly information. tion should be 64 1 dB and 76 8 msec, respectively. The bonding pad and chip backside metallization is gold. For more detailed information see HP application note #999 "GaAs MMIC Assembly and Handling Guidelines." GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. Assembly Techniques Solder die-attach using a fluxless AuSu solder preform is the recommended assembly method. Gold thermosonic wedge bonding with 0.7 or 1.0 mil diameter Au wire is recommended for D.C. bonds. For RF bonds, MWTC recommends low inductance mesh interconnections for best return loss performance. Tool force should be 22 1 gram, stage temperature should be 150 2C, and ultrasonic power and dura- Biasing and Operation This amplifier is biased with a single positive drain supply (VDD). The recommended bias for the HMMC-5620 is VDD = 5.0 V, which results in IDD = 100 mA (Typ.). No Drain Bias FEEDBACK NTWK FEEDBACK NTWK FEEDBACK NTWK FEEDBACK NTWK RF Output MATCHING MATCHING RF Input MATCHING MATCHING 5 5 MATCHING 5 5 GND GND GND GND GND GND GND GND Figure 1. HMMC-5620 Schematic. 6-72 VDD RF Input RF Output Chip ID No. 875 (VDD Pad) 910 (Center of VDD Pad) 1010 (10) 350 350 0 85 0 (RF Input Pad) 1325 (RF Output Pad) 1410 (10) Notes: All dimensions in microns. RF Pad Dim: 80 x 80 m. VDD Pad Dim: 110 x 90 m All other dimensions: 5 m (unless otherwise noted). Chip thickness: 127 15 m. Figure 2. HMMC-5620 Bonding Pad Locations. 68 pF Chip Capacitor L 2 nH (1.0 mil Gold Wire Bond with length 100 mils) Gold Plated Shim Input and Output Thin Film Circuits with 50 ohm transmission lines. (2 places) VDD RF IN RF OUT 2.0 mil nom. gap Figure 3. HMMC-5620 Assembly Diagram. (For 6.0 - 20.0 GHz Operation) 6-73 HMMC-5620 Typical Performance 23 SMALL-SIGNAL GAIN, S21 (dB) VDD = 5.0 V, IDD = 100 mA[1] -35 REVERSE ISOLATION, S12 (dB) -40 18 -45 -50 13 -55 -60 8 -65 -70 -75 3 2 4 6 8 10 12 14 16 18 20 22 24 26.5 FREQUENCY (GHz) INPUT RETURN LOSS, S11 (dB) -5 -10 -15 -20 -25 -30 VDD = 5.0 V, IDD = 100 mA[1] -5 -10 -15 -20 -25 -30 OUTPUT RETURN LOSS, S22 (dB) -35 -35 2 4 6 8 10 12 14 16 18 20 22 24 26.5 FREQUENCY (GHz) Figure 4. Typical Gain and Reverse Isolation vs. Frequency. Figure 5. Typical Input and Output Return Loss vs. Frequency. Typical Scattering Parameters[1], (Tchuck = 25C, VDD = 5.0 V, IDD = 100 mA, Zin = Zo = 50 ) Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 26.5 dB -10.7 -13.5 -14.6 -15.8 -18.4 -20.9 -22.2 -21.9 -20.2 -18.4 -16.7 -15.8 -15.8 -16.4 -17.5 -17.7 -16.8 -16.1 -18.5 -19.9 -14.2 -11.6 -10.3 -9.6 -9.2 -9.1 S11 Mag. 0.292 0.212 0.186 0.162 0.120 0.090 0.078 0.080 0.097 0.120 0.146 0.161 0.163 0.151 0.134 0.130 0.145 0.156 0.119 0.101 0.195 0.263 0.306 0.330 0.347 0.349 Ang. -100.3 -117.5 -136.6 -168.9 157.5 123.0 83.1 41.3 6.6 -21.0 -46.4 -70.0 -90.0 -105.6 -115.4 -114.1 -118.4 -131.6 -143.8 -108.1 -107.7 -125.6 -142.2 -157.2 -169.9 -357.4 dB -46.1 -74.1 -63.1 -60.4 -66.5 -62.7 -61.3 -66.5 -68.1 -60.0 -58.3 -62.7 -59.3 -57.5 -57.1 -55.6 -62.3 -59.7 -52.5 -53.2 -59.3 -54.0 -75.8 -53.5 -59.0 -54.9 S21 Mag. 0.0049 0.0002 0.0007 0.0010 0.0005 0.0007 0.0009 0.0005 0.0004 0.0010 0.0012 0.0007 0.0011 0.0013 0.0014 0.0017 0.0008 0.0010 0.0024 0.0022 0.0011 0.0020 0.0002 0.0021 0.0011 0.0018 Ang. -174.7 114.0 -122.1 -161.8 162.7 -175.3 -178.0 -62.4 -159.3 -113.5 -112.2 -130.0 -161.1 173.9 -165.9 175.5 98.2 112.8 72.9 -7.1 -8.0 -54.4 -158.2 -165.8 -137.5 78.2 dB -6.2 3.5 13.0 16.0 16.7 16.3 16.0 16.0 16.1 16.3 16.6 17.0 17.3 17.4 17.5 17.3 17.0 16.7 16.0 15.3 10.7 5.4 0.3 -4.5 -9.0 -11.2 S12 Mag. 0.491 1.489 4.486 6.310 6.839 6.531 6.310 6.310 6.383 6.531 6.761 7.079 7.328 7.413 7.499 7.328 7.079 6.839 6.310 5.842 3.414 1.857 1.034 0.595 0.355 0.275 Ang. -52.2 -170.0 82.2 -26.5 -116.8 173.2 114.2 60.2 9.0 -40.7 -89.9 -139.4 170.1 118.6 66.0 12.3 -43.1 -101.9 -168.5 119.8 54.2 -0.4 -47.5 -90.5 -131.1 -511.3 dB -8.1 -10.1 -12.7 -21.7 -25.7 -22.1 -21.7 -22.5 -23.2 -23.4 -21.5 -19.1 -17.2 -16.0 -15.5 -15.5 -16.5 -17.7 -20.8 -20.4 -14.9 -12.0 -10.3 -9.0 -7.9 -7.4 S22 Mag. 0.395 0.311 0.232 0.082 0.052 0.079 0.082 0.075 0.070 0.067 0.084 0.111 0.137 0.159 0.168 0.167 0.149 0.130 0.091 0.096 0.179 0.250 0.306 0.353 0.402 0.426 Ang. -152.2 -171.5 136.5 61.5 -86.6 -131.4 -150.6 -156.7 -152.9 -143.0 -136.8 -133.7 -143.0 -152.8 -167.9 -179.7 162.9 145.2 93.0 -4.3 -63.6 -93.3 -110.4 -124.2 -134.3 -140.2 Note: 1. Data obtained from on-wafer measurements. 6-74 HMMC-5620 Typical Performance 17 15 HARMONICS (dBc) VDD = 5.0 V, IDD (Q) = 100 mA -20 -25 VDD = 5.0 V, IDD (Q) = 100 mA 17 15 13 11 9 7 VDD = 7.0 V, IDD (Q) = 105 mA OUTPUT POWER (dBm) 2nd Harmonic 13 11 9 7 5 4 P(-1 dB) P(-3 dB) P(-5 dB) 6 8 10 12 14 16 18 20 22 -35 -40 -45 -50 -55 -60 -65 -70 4 5 6 7 8 9 10 11 12 13 14 3rd Harmonic OUTPUT POWER (dBm) -30 P(-1 dB) P(-3 dB) P(-5 dB) 6 8 10 12 14 16 18 20 22 5 4 FREQUENCY (GHz) FUNDAMENTAL FREQUENCY, O (GHz) FREQUENCY (GHz) Figure 6. Typical Output Power vs. Frequency (with 5 V bias.) Figure 7. Typical Second and Third Harmonics vs. Fundamental Frequency at POUT = 10 dBm. 20 18 VDD = 5.0 V, IDD (Q) = 100 mA 20 18 ASSOCIATED GAIN (dB) Figure 8. Typical Output Power vs. Frequency (with 7 V bias). -20 -25 -30 HARMONICS (dBc) VDD = 7.0 V, IDD (Q) = 105 mA 2nd Harmonic NOISE FIGURE (dB) 16 14 12 10 8 6 4 2 16 14 12 10 8 6 4 2 7 9 11 13 15 17 19 0 21 -35 -40 -45 -50 -55 -60 -65 -70 4 5 6 7 8 9 10 11 12 13 14 3rd Harmonic 0 5 FUNDAMENTAL FREQUENCY, O (GHz) FREQUENCY (GHz) Figure 9. Typical Second and Third Harmonics vs. Fundamental Frequency at POUT = 10 dBm. VDD = 5.0 V, IDD (@ TA = 25C) = 100 mA 0.035 dB/C SMALL-SIGNAL GAIN, S21 (dB) Figure 10. Typical Noise Figure Performance vs. Frequency. 22 20 18 16 14 12 10 0.027 dB/C 0.036 dB/C -55C -25C 0C +25C +55C +85C +100C +125C 8 2 4 6 8 10 12 14 16 18 20 22 24 26.5 FREQUENCY (GHz) Figure 11. Typical Small-Signal Gain vs. Temperature. This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 6-75 |
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