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SLD1324ZT High-Power Density 1W Laser Diode For the availability of this product, please contact the sales office. Description The SLD1324ZT is a gain-guided, high-power laser diode with 1W red visible output. The flat package with built-in TE cooler is adopted and fine tuning of wavelength is possible by controlling the laser chip temperature. Features * High power Recommended optical power output :1.0W * Emitting line width :200m * Flat package with built-in photodiode, TE cooler and thermistor Applications * Medical use * Solid state laser excitation Structure AlGaInP quantum well structure laser diode Absolute Maximum Ratings (Tth = 25C) * Optical power output PO * Reverse voltage VRLD PD * Operating temperature (Tth) Topr * Storage temperature Tstg * Operating current of TE cooler IT Pin Configuration (Top View) No. 1 2 3 4 5 6 Function T. E. Cooler (negative) T. E. Cooler (negative) Thermister Thermister LD (anode) LD (anode) No. 7 8 9 10 11 12 Function LD (cathode) LD (cathode) PD (cathode) PD (anode) T. E. Cooler (positive) T. E. Cooler (positive) 1 12 123 M-272 Equivalent Circuit T.E. Cooler TH LD PD 456 789 10 11 12 1.1 2 15 -10 to +30 -40 to +85 4.0 W V V C C A Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E94724-PP SLD1324ZT Optical and Electrical Characteristics Item Threshold current Operating current Operating voltage Wavelength Monitor current Radiation angle (F.W.H.M) Positional accuracy Differential efficiency Thermistor resistance Marking Perpendicular Parallel Position Angle Symbol Ith Iop Vop Imon // X, Y D Rth PO = 1.0W PO = 1.0W PO = 1.0W (Tth = Thermistor temperature, Tth = 25C) Conditions Min. Typ. 0.9 2.1 2.2 685 0.15 15 4 695 1.2 24 11 Max. 1.5 3.0 3.0 705 3.0 35 15 100 3 0.3 0.9 10 1.5 Unit A A V nm mA degree degree m degree W/A k PO = 1.0W, VR = 10V PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W PO = 1.0W Tth = 25C Production factory 4 1 1 Lot No. Categories are not specified by marking. Safety goggles for protection from laser beam Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material IR fluorescent plate Optical board Optical power output control device Temperature control device -2- SLD1324ZT Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 1.2 Tth = 3025 15 0 -10C 1.0 Threshold current vs. Temperature characteristics 1.5 Po-Optical power output [W] Imon 0.8 -10 0.6 Tth = 30C 0.4 IF Ith-Threshold current [mA] 1 0.2 0.5 -10 0 0 0.5 1.0 1.5 2.0 IF Forward current [A] 0 0.5 1.0 Imon-Monitor Current [mA] 1.5 2.0 0 10 20 30 Tth-Thermistor temperature [C] Slope efficiency vs. Temperature characteristics 1 700 Temperature dependence of wavelength PO = 1W D Slope efficiency [W/A] 690 0.5 p-Wavelength [nm] 680 670 0 -10 0 10 20 30 660 -10 0 10 20 30 Tth-Thermistor temperature [C] Tth-Thermistor temperature [C] Power dependence of far field pattern (Perpendicular to junction) Tth = 25C Power dependence of far field pattern (Parallel to junction) Tth = 25C Relative radiant intensity PO = 1.0W 0.8W 0.6W 0.4W 0.2W -60 -40 -20 0 20 40 60 Relative radiant intensity PO = 1.0W 0.8W 0.6W 0.4W 0.2W -60 -40 -20 0 20 40 60 Angle [degree] -3- Angle [degree] SLD1324ZT TE cooler characteristics 1 40 Tc = 32C SV 2 15 40 Tth = 25C IT = 4A 3A 15 Q-Absorbed heat [W] VT-Pin voltage [V] 10 IT = 4A 10 20 3A 2A 5 20 2A 10 10 3A T 5 VS Q 4A 0 2A 80 100 0 0 0 20 40 60 80 100 0 0 20 40 60 T-Temperature difference [C] T: Tc - Tth Tth Thermistor temperature : Tc : Case temperature T-Temperature difference [C] Thermistor characteristics 50 Rth-Thermistor resistance [k] 10 5 1 -10 0 10 20 30 40 50 60 70 Tth-Thermistor temperature [C] -4- VT-Pin voltage [V] T VS V Q-Absorbed heat [W] 30 30 T V T VS 3A Q 2A 4A SLD1324ZT Power dependence of Spectrum (Tth = 25C) Po = 0.2W 1.00 1.00 Po = 0.4W Relative radiant intensity 0.00 688 Wavelength [nm] Relative radiant intensity 698 0.00 688 Wavelength [nm] 698 Po = 0.6W 1.00 1.00 Po = 0.8W Relative radiant intensity 0.00 688 Wavelength [nm] Relative radiant intensity 698 0.00 688 Wavelength [nm] 698 Po = 1.0W 1.00 Relative radiant intensity 0.00 688 Wavelength [nm] 698 -5- SLD1324ZT Temperature dependence of Spectrum (Po = 1W) Tth = -10C 1.00 1.00 Tth = 0C Relative radiant intensity Relative radiant intensity 0.00 675 Wavelength [nm] 0.00 675 Wavelength [nm] 705 705 Tth = 15C 1.00 1.00 Tth = 25C Relative radiant intensity 0.00 675 Wavelength [nm] Relative radiant intensity 705 0.00 675 Wavelength [nm] 705 Tth = 30C 1.00 Relative radiant intensity 0.00 675 Wavelength [nm] 705 -6- SLD1324ZT Package Outline Unit: mm M-272 + 0.06 4 - 3.0 0 41.0 0.05 20.0 0.05 18.0 5.0 Window Glass 8.0 0.5 12 - 0.64 2.54 46.0 0.5 0.8 MAX 23.0 36.0 0.5 LD CHIP 10.0 0.1 36.0 0.5 9.0 0.2 118 g Reference Plane 20.5 0.1 SONY CODE EIAJ CODE JEDEC CODE M-272 Distance between pilot hole and emitting area. PACKAGE WEIGHT -7- 3.0 13.05 0.1 12.35 |
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