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 Semiconductor
STK1040P
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
* High Voltage: BVDSS=400V(Min.) * Low Crss : Crss=12pF(Typ.) * Low gate charge : Qg=28nc(Typ.) * Low RDS(on) :RDS(on)=0.53(Max.)
Ordering Information
Type NO. STK1040P Marking STK1040 Package Code TO-220AB-3L
Outline Dimensions
9.80~10.20 3.70 Max. 8.20~8.60
unit : mm
4.35~4.65 1.20~1.40
6.30~6.70
9.05~9.35
12.68~13.48
1.62 Max. 0.95~1.05 1.49~1.59 1.37 Max. 0.95 Max. 2.20~2.60
9.85~10.15
2.54 Typ. 5.08 Typ.
3.00
0.40~0.60
2.35~2.45
9.85~10.15
PIN Connections 1. Gate 2. Drain 3. Source
KSD-T0P005-000
1
STK1040P
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
*
(Tc=25C)
Symbol
VDSS VGSS ID (Tc=25) (Tc=100) IDM PD IAS EAS IAR EAR TJ Tstg
Rating
400 30 10 4.7 40 65 10 360 10 8.5 150 -55~150
Unit
V V A A A W A mJ A mJ C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-a)
Typ.
-
Max
1.92 83.3
Unit
/W
KSD-T0P005-000
2
STK1040P
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
(Tc=25C)
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250A, VGS=0 ID=250A, VDS= VGS VDS=400V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=5.0A VDS=10V, ID=5.0A VGS=0V, VDS=25V f=1MHz
Min.
400 2.0 -
Typ.
0.46 6.2 950 120 12 14 89 81 81 28 4 15
Max.
4.0 1 100 0.53 1430 180 18 42 6 23
Unit
V V A nA S pF
VDD=200V, ID=10A RG=25
-
VDS=200V, VGS=10V ID=10A
-
ns
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge
(Tc=25C)
Symbol
IS ISM VSD trr Qrr
Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=10A Is=10A, VGS=0, diS/dt=100A/ us
Min
-
Typ
290 5.04
Max
10 40 1.4 -
Unit
A V ns uC
Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=6.6mH, IAS=10A, VDD=50V, RG=27 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature
KSD-T0P005-000
3
STK1040P
Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
:
-
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
KSD-T0P005-000
4
STK1040P
Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ
C
C
Fig. 9
ID - TC
Fig. 10 Safe Operating Area
*
KSD-T0P005-000
5
STK1040P
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0P005-000
6
STK1040P
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T0P005-000
7
STK1040P
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
KSD-T0P005-000
8


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