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| TCMT1600 / TCMT4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Single/Quad Channel, Half Pitch Mini-Flat Package Features * * * * * * * Low profile package (half pitch) AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF Low temperature coefficient of CTR Wide ambient temperature range Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17224 C E 9 Agency Approvals * UL1577, File No. E76222 System Code M, Double Protection * C-UL CSA 22.2 bulletin 5A, System Code U 1 A 4 PIN 16 PIN 2 C 8 Applications Programmable logic controllers C e3 e3 Pb Pb Pb-free Pb-free Description The low profile Miniflat package includes an Optocoupler with AC Input and Transistor Output. It is available in single channel (4 pin) TCMT1600 or quad channel (16 pin)TCMT4600. Order Information Part TCMT1600 TCMT4600 TCMT4600T0* Remarks CTR 80 - 300 %, Single Channel, SMD-4 CTR 80 - 300 %, Quad Channel, SMD-16 CTR 80 - 300 %, Quad Channel, SMD-16 NOTE: Available only on tape and reel. * Product is rotated 180 in tape and reel cavity. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp 10 s Test condition Symbol VR IF IFSM Pdiss Tj Value 6 60 1.5 100 125 Unit V mA A mW C Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 1 TCMT1600 / TCMT4600 Vishay Semiconductors Output Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp 10 ms Test condition Symbol VCEO VECO IC ICM Pdiss Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature 1) Test condition Symbol VISO 1) Value 3750 250 - 40 to + 100 - 40 to + 100 240 Unit VRMS mW C C C Ptot Tamb Tstg Tsld Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Junction capacitance Test condition IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.6 Unit V pF Output Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 100 A IE = 100 A VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 100 Typ. Max Unit V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Capacitance (input-output) Test condition IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz Symbol VCEsat fc CIO 100 0.3 Min Typ. Max 0.3 Unit V kHz pF www.vishay.com 2 Document Number 83512 Rev. 1.5, 02-Feb-05 TCMT1600 / TCMT4600 Vishay Semiconductors Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 5 mA Part TCMT1600 TCMT4600 Symbol CTR CTR Min 80 80 Typ. Max 300 300 Unit % % Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test condition VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IF = 10 mA, RL = 1 k (see figure 1) VS = 5 V, IF = 10 mA, RL = 1 k (see figure 1) IF +5 V IC = 2 mA; RG = 50 tp = 0.01 T tp = 50 ms Channel I Channel II 50 15234 Symbol td tr tf ts ton toff ton toff Min Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Max Unit s s s s s s s s 0 IF IF adjusted throug input amplitude 96 11698 0 IC 100% 90% tp t 100 Oscilloscope RL = 1 M CL = 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 1. Test circuit, non-saturated operation Figure 3. Switching Times 0 IF IF = 10 mA +5 V RG = 50 tp = 0.01 T tp = 50 ms Channel I Channel II 50 15235 1 k Oscilloscope RL = 1 M CL = 20 pF Figure 2. Test circuit, saturated operation Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 3 TCMT1600 / TCMT4600 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) 300 P tot -Total Power Dissipation ( mW) Coupled device 250 200 Phototransistor V CE = 20 V IF = 0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11026 25 50 75 100 96 1 1700 Tamb - Ambient T emperature( C ) Tamb - Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current ( mA ) 1000 I F - Forward Current ( mA ) V CE=5V 10 100 10 1 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.01 0.1 95 11027 1 10 100 V F - Forward Voltage ( V ) I F - Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current CTRrel - Relative Current Transfer Ratio 2.0 IC - Collector Current ( mA) 100 V CE=5V I F=5mA 20mA I F=50mA 10 10mA 5mA 2mA 1mA 0.1 0.1 95 10985 1.5 1.0 1 0.5 0 -25 0 25 50 75 1 10 100 95 11025 Tamb - Ambient Temperature ( C ) V CE - Collector Emitter Voltage ( V ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Collector Emitter Voltage www.vishay.com 4 Document Number 83512 Rev. 1.5, 02-Feb-05 TCMT1600 / TCMT4600 Vishay Semiconductors VCEsat- Collector Emitter Saturation Voltage ( V) ton / toff -Turn on / Turn off Time ( s ) 1.0 20% 0.8 CTR=50% 0.6 10 Non Saturated Operation V S=5V RL=100 8 ton 6 toff 4 2 0 0.4 0.2 0 1 10 I C - Collector Current ( mA ) 100 10% 0 95 11030 2 4 6 10 95 11028 I C - Collector Current ( mA ) Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 1000 V CE=5V 100 Figure 13. Turn on / off Time vs. Collector Current CTR - Current Transfer Ratio ( % ) 10 1 0.1 95 11029 1 10 100 I F - Forward Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current ton / toff -Turn on / Turn off Time ( s ) 50 Saturated Operation V S=5V RL=1k 40 30 toff 20 10 0 0 5 10 15 ton 20 95 11031 I F - Forward Current ( mA ) Figure 12. Turn on / off Time vs. Forward Current Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 5 TCMT1600 / TCMT4600 Vishay Semiconductors Package Dimensions in mm 16283 www.vishay.com 6 Document Number 83512 Rev. 1.5, 02-Feb-05 TCMT1600 / TCMT4600 Vishay Semiconductors Package Dimensions in mm 15226 Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 7 TCMT1600 / TCMT4600 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83512 Rev. 1.5, 02-Feb-05 |
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