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| 2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 12 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 8 32 8 60 150 -55 to +150 Unit V V A A A W C C 2 2SK1315(L)(S), 2SK1316(L)(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1315 V(BR)DSS 2SK1316 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.5 -- -- -- -- -- -- -- -- -- -- 0.55 0.60 7.5 1150 340 55 17 55 100 45 0.9 350 3.0 0.7 0.8 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF/dt = 100 A/s I D = 4 A, VGS = 10 V, RL = 7.5 I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1315 I DSS 2SK1316 Gate to source cutoff voltage Static Drain to source 2SK1315 RDS(on) on state resistance 2SK1316 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test See characteristic curves of 2SK1159, 2SK1160. 3 2SK1315(L)(S), 2SK1316(L)(S) Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 Case Temperature TC (C) 150 4 Unit: mm 10.2 0.3 (1.4) 4.44 0.2 1.3 0.2 + 0.3 - 0.5 11.3 0.5 8.6 0.3 10.0 1.27 0.2 0.2 0.86 + 0.1 - 0.76 0.1 2.54 0.5 11.0 0.5 1.2 0.2 2.59 0.2 2.54 0.5 0.4 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) LDPAK (L) -- -- 1.4 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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