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PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 88N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 m V A Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 300 300 20 V V V A A A A mJ J V/ns W C C C C TO-247 (IXTH) D (TAB) TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150 TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 TO-268 300 1.13/10 Nm/lb.in. 6 10 5 g g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 300 2.5 5.0 100 25 250 40 V V nA A A m Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99129A(01/04) (c) 2004 IXYS All rights reserved IXTH 88N30P IXTT 88N30P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 50 6300 VGS = 0 V, VDS = 25 V, f = 1 MHz 950 190 25 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 24 96 25 180 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 44 90 S pF pF pF ns ns ns ns nC nC nC 0.21 K/W (TO-247) (TO-264) 0.21 0.15 K/W K/W Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 88 220 1.5 250 3.3 A A V ns C TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 88N30P IXTT 88N30P Fig. 1. Output Characteristics @ 25C 90 80 70 VGS = 10V 9V 8V 200 180 160 140 VGS = 10V 9V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 60 50 40 30 20 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 7V 120 100 80 60 40 20 0 0 2 4 6 8 6V 5V 10 12 14 16 18 20 7V V D S - Volts Fig. 3. Output Characteristics @ 125C 90 80 70 VGS = 10V 9V 8V 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 1 2 3 4 5 6 7 8 9 -50 -25 0 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature I D - Amperes 60 50 40 30 20 10 0 7V R D S (on) - Normalized I D = 88A I D = 44A 6V 5V 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 3.4 3.2 3 2.8 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 140 160 180 200 TJ = 25C TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 100 90 80 0.5 ID25 Value vs. ID VGS = 10V R D S (on) - Normalized I D - Amperes 2.6 TJ = 125C 70 60 50 40 30 20 10 0 I D - Amperes -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTH 88N30P IXTT 88N30P Fig. 7. Input Adm ittance 160 140 120 100 80 60 40 20 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125C 25C -40C 100 90 80 TJ = -40C 25C 125C Fig. 8. Transconductance g f s - Siemens 70 60 50 40 30 20 10 0 0 I D - Amperes 20 40 60 80 100 120 140 160 180 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 280 240 200 10 9 8 VDS = 150V I D = 44A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 7 VG S - Volts TJ = 125C TJ = 25C 160 120 80 40 0 0.4 0.6 0.8 6 5 4 3 2 1 0 V S D - Volts 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 TJ = 150C R DS(on) Limit TC = 25C 25s Fig. 11. Capacitance 10000 Capacitance - picoFarads C iss I D - Amperes 100 1ms 10ms 10 DC 100s 1000 C oss f = 1MHz C rss 100 0 5 10 15 20 25 30 35 40 1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. V D S - Volts IXTH 88N30P IXTT 88N30P Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce 1.00 R(th) J C - C / W 0.10 0.01 1 10 1 00 1000 Puls e W idth - millis ec onds (c) 2004 IXYS All rights reserved |
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