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| Datasheet File OCR Text: |
| RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 File Number 2870.1 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate Features * -2A, -80V and -100V * rDS(ON) = 3.500 [ /Title power field effect transistors designed for applications such * Related Literature (RFP2P as switching regulators, switching converters. motor drivers, - TB334 "Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching 08, Components to PC Boards RFP2P transistors requiring high speed and low gate drive power. These types can be operated directly from integrated Symbol 10) circuits. /SubFormerly developmental type TA_____. D ject (A, Ordering Information 0V G PART NUMBER PACKAGE BRAND nd RFP2P08 TO-220AB RFP2P08 00V, S RFP2P10 TO-220AB RFP2P10 .500 NOTE: When ordering, use entire part number. hm, -Chanel Packaging ower TO-220AB OSSOURCE ETs) DRAIN GATE /Author ) DRAIN (FLANGE) /Keyords Harris emionducor, -Chanel ower OSETs, O20AB) /Cretor () /DOCI FO df- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 RFP2P08, RFP2P10 RFP2P08 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg -80 -80 2 5 20 25 0.2 -55 to 150 300 260 RFP2P10 -100 -100 2 5 20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/oCaaa oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = -250A, VGS = 0 -80 -100 VGS(TH) IDSS VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -2 VGS = 0V, VDS = -25V, f =1MHz (Figure 9) 7 15 14 11 -4 -1 -25 100 3.500 -7.0 25 45 45 25 150 80 30 5 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP2P08 RFP2P10 Gate Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = -2A, VGS = -10V (Figures 6, 7) ID = -2A, VGS = -10V ID = 1A, VDD = -50V, RG = 50, VGS = -10V, RL = 46.5 (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = -1A ISD = -2A, dISD/dt = 50A/s MIN TYP 135 MAX -1.4 UNITS V ns 2 RFP2P08, RFP2P10 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless otherwise Specified 2.5 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 4 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VGS = -20V 3 1 2 VGS = -4V 1 VGS = -10V VGS = -8V VGS = -7V VGS = -6V VGS = -5V 0.10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.01 1 10 100 1000 0 VDS, DRAIN TO SOURCE VOLTAGE (V) -2 -3 -4 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) -5 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 3.5 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 3 2.5 2 1.5 1 0.5 0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10 125oC VDS = -15V PULSE DURATION = 80s DUTY CYCLE 2% -40oC 25oC 4 125oC 3 25oC 2 VGS = -10V PULSE DURATION = 80s DUTY CYCLE 2% -40oC 1 0 0 1 2 3 ID, DRAIN CURRENT (A) 4 5 FIGURE 5. TRANSER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 3 RFP2P08, RFP2P10 Typical Performance Curves ID = -2A VGS = -10V PULSE DURATION = 80s NORMALIZED GATE THRESHOLD VOLTAGE Unless otherwise Specified (Continued) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 NORMALIZED DRAIN TO SOURCE ON RESISTANCE (m) 2 ID = 250A VDS = -5V 1.5 1 0.5 -50 0 50 100 150 0.6 -50 TJ, JUNCTION TEMPERATURE (oC) 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VDD = BVDSS 75 VDD = BVDSS GATE SOURCE VOLTAGE RL = 50 IG(REF) = 0.095mA VGS = -10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 0 VGS, GATE TO SOURCE VOLTAGE (V) 160 140 C, CAPACITANCE (pF) 120 100 80 60 COSS 40 20 0 CRSS 0 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 8 6 50 4 25 2 0 I (REF) 20 G IG (ACT) t, TIME (s) I (REF) 80 G IG (ACT) -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) -50 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuit and Waveforms tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4 RFP2P08, RFP2P10 Test Circuit and Waveforms -VDS (ISOLATED SUPPLY) 0 DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd Qg(TOT) VGS VDS CURRENT REGULATOR IG(REF) FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS 5 |
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