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Power Transistors
2SD2538
Silicon NPN triple diffusion planer type Darlington
Unit: mm
For power amplification I Features
* High forward current transfer ratio hFE * Full-pack package which can be installed to the heat sink with one screw
9.90.3
3.00.5
4.60.2 2.90.2
13.70.2 4.20.2 Solder Dip
15.00.5
3.20.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 4 2 35 2 150 -55 to +150 C C Unit V V V A A W
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
2.540.30 5.080.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D Full Pack Package
Internal Connection
C B
Junction temperature Storage temperature
E
I Electrical Characteristics TC = 25C 3C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q VBE fT ton tstg tf
*
Conditions VCB = 60 V, IE = 0 VCE = 30 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 4 V, IC = 2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = -8 mA VCC = 50 V
Min
Typ
Max 1 2 2
Unit mA mA mA V
60 1 000 2 000 10 000 2.5 2.8 20 0.5 4.0 1.0
VCE(sat)
V V MHz s s s
4 000 to 10 000 2 000 to 5 000
1

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