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APM4925
P-Channel Enhancement Mode MOSFET
Features
* * * *
-30V/-6.1A, RDS(ON) = 24m(typ.) @ VGS = -10V RDS(ON) = 30m(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package
Pin Description
S1 G1 S2 G2
1 2 3 4
8 7 6 5
D1 D1 D2 D2
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
G1
SO - 8
S1 S2
G2
D1
D1
D2
D2
Ordering and Marking Information
APM 4925
Handling Code Tem p. Range P ackage Code
P-Channel MOSFET
P ackage Code K : S O -8 O peration Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel
A P M 4925
A P M 4925 XXXXX
X X X X X - Date Code
Absolute Maximum Ratings
Symbol VDSS VGSS ID * IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating -30 25 TA = 25C -6.1 -40 Unit V A
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
*Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 1 www.anpec.com.tw
APM4925
Absolute Maximum Ratings
Symbol PD TJ TSTG RJA Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA = 25C TA = 100C
(TA = 25C unless otherwise noted)
Rating 2.5 1 150 -55 to 150 50 C C/W Unit W
Electrical Characteristics
Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) b VSD b Dynamic Qg Q gs Q gd td(ON) tr td(OFF) tf C iss C oss C rss Notes
a b a
(TA=25C unless otherwise noted)
APM4925 Min. Typ a. Max. -30 -1 -1 -1.5 -2 100 24 30 -0.7 48 V DS= -15V, V GS= -10V, ID= -4.6A 10 9 17 V DD= -25V, R L =12.5, ID= -2A , V GEN = -10V, R G=6, V GS=0V, V DS= -25V Frequency = 1.0MHZ 18 70 30 3200 560 250 pF 33 35 128 56 ns 27 35 -1.3 58 nC m V
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Capacitance
V GS=0V, I D = -250A V DS= -24V, V GS=0V V DS=V GS, ID = -250A V GS= 25V , V DS=0V V GS= -10V, ID= -6.1A V GS= -4.5V, I D= -5.1A ISD= -1.7A, V GS=0V
V A V nA
: Guaranteed by design, not subject to production testing : Pulse test ; pulse width 300s, duty cycle 2%
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
2
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APM4925
Typical Characteristics
Output Characteristics
50
-VGS=4,5,6,7,8,9,10V
Transfer Characteristics
50
-ID-Drain Current (A)
30
-ID-Drain Current (A)
40
40
30
TJ=125C
20
-VGS=3V
20
TJ=25C TJ=-55C
10
10
0
0
2
4
6
8
10
0
0
1
2
3
4
5
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250A
On-Resistance vs. Drain Current
0.06
-VGS(th)-Threshold Voltage (V) (Normalzed)
RDS(on)-On-Resistance ()
1.35 1.20 1.05 0.90 0.75 0.60 -50
0.05 0.04 0.03 0.02 0.01 0.00
-VGS=4.5V
-VGS=10V
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
Tj - Junction Temperature (C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
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APM4925
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.050
-ID=6.1A
On-Resistance vs. Junction Temperature
1.8
-VGS=10V -ID=6.1A
RDS(on)-On-Resistance ()
RDS(on)-On-Resistance () (Normalized)
0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 2 3 4 5 6 7 8 9 10
1.6 1.4 1.2 1.0 0.8 0.6 -50
-25
0
25
50
75
100
125
150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
10
4500
-VDS=15V -ID=4.6A
Capacitance
Frequency=1MHz
-VGS-Gate-Source Voltage (V)
8
3600
Capacitance (pF)
Ciss
6
2700
4
1800
2
900
Coss Crss
0 0
0
10
20
30
40
50
0
6
12
18
24
30
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
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APM4925
Typical Characteristics
Source-Drain Diode Forward Voltage
30
Single Pulse Power
100
-IS-Source Current ()
10
80
Power (W)
1.2 1.4
60
TJ=150C
TJ=25C
1
40
20
0.1 0.0
0.2
0.4
0.6
0.8
1.0
0 0.01
0.1
1
10
-VSD-Source-to-Drain Voltage (V )
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle = 0.5
D= 0.2 D= 0.1
0.1
D= 0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted
D= 0.02
SINGLE PULSE
0.01 1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
5
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APM4925
Package Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
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APM4925
Physical Specifications
Terminal Material Lead Solderability Packaging Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 2500 devices per reel for SOP-8
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) Preheat temperature 125 25C) Temperature maintained above 183C Time within 5C of actual peak temperature Peak temperature range Ramp-down rate Time 25C to peak temperature 3C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0C or 235 +5/-0C 6 C /second max. 6 minutes max. VPR 10 C /second max.
60 seconds 215~ 219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bags Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
7
APM4925
R e lia b ilit y te s t p r o g r a m
Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 C -6 5 C ~ 1 5 0 C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A
Carrier Tape
Po E P1 P D
t
F W
Bo
Ao
Ko D1
T2
J C A B
T1
Application
A 330 1 F
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 0.5 Po
T1 12.4 0.2 P1 2.0 0.1 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1 Ao 8.2 0.1
W 12 0. 3 Bo 5.2 0. 1 Bo 13 0.1
P 8 0.1 Ko
E 1.750.1 t
SOP- 8
5.5 1 F 11.5 0.1
1.55 +0.1 1.55+ 0.25 4.0 0.1 D 1.5 +0.1 D1 1.5+ 0.25 Po 4.0 0.1
2.1 0.1 0.30.013 Ko t
2.5 0.1 0.350.013
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
8
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APM4925
Cover Tape Dimensions
Carrier Width Cover Tape Width 12 9.3 (mm)
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002
9
www.anpec.com.tw

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