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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1027 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V -65 o C to 150o C 24 A RF CHARACTERISTICS ( 200 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 10 60 20:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz Idq = 2.4 A, Vds = 28.0 V, F = 175 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 4.8 0.18 33 198 24 120 MIN 65 6 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.3 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 28.0 V, Vds = 0 V, Ids = 0.6 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 24 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1027 POUT VS PIN GRAPH F1027 PIN VS POUT F=175 MHZ; IDQ=2.4A; VDS=28.0V CAPACITANCE VS VOLTAGE F1B 6 DICE CAPACITANCE 300 19 18 1000 250 17 200 POUT GAIN 16 15 Ciss Coss 150 14 100 13 100 Crss 12 50 11 0 0 2 4 6 8 10 PIN IN WATTS 10 12 14 16 18 20 10 0 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F1B 6 DICE IV CURVE 40 35 ID AND GM VS VGS F1B 6 DIE GM & ID vs VG 100 Id 30 25 20 15 10 5 0 0 2 4 6 8 10 Vds in Volts 10 1 Gm 12 14 16 18 20 0.1 0 2 4 6 Vgs in Volts 8 10 12 14 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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