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May 1997
NDH853N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
Features
7.6 A, 30 V. RDS(ON) = 0.017 @ VGS = 10 V RDS(ON) = 0.025 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.
___________________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25C unless otherwise noted
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
NDH853N 30 20 7.6 23 1.8 1 0.9 -55 to 150
Units V V A
W
TJ,TSTG
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
70 20
C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V TJ= 55C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 A TJ= 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 7.6 A TJ= 125C VGS = 4.5 V, ID = 6.7 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 7.6 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 23 18 1 0.7 1.5 1 0.014 0.02 0.021 30 1 10 100 -100 V A A nA nA
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 2 1.6 0.017 0.031 0.025 A S V
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1140 630 210 pF pF pF
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15 V, ID = 7.6 A, VGS = 10 V VDD = 10 V, ID = 1 A, VGEN = 10 V, RGEN = 6 14 24 73 48 38 2.8 12.7 30 50 120 80 50 ns ns ns ns nC nC nC
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max 1.5
(Note 2)
Units A V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.5 A 0.72
1.2
PD (t) =
T J -T A R JA (t)
=
T J -T A R JC +R CA (t)
= I 2 (t) x R DS(ON)@T J D
Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 70oC/W when mounted on a 1 in2 pad of 2oz cpper. b. 125oC/W when mounted on a 0.026 in2 pad of 2oz copper. c. 135oC/W when mounted on a 0.005 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDH853N Rev. C
Typical Electrical Characteristics
30 3
VGS =10V
I D , DRAIN-SOURCE CURRENT (A)
25
DRAIN-SOURCE ON-RESISTANCE
6.0 4.5
4.0
2.5
V GS = 3.5V
20
R DS(on) , NORMALIZED
3.5
2
4.0 4.5
15
1.5
5.0 6.0
10
3.0
5
1
10
2.5
0 0 0.5 1 1.5 2 VDS , DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.5 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.
1.6
1.8
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I D = 7.6A
1.4
V G S = 10 V
1.6
R DS(ON), NORMALIZED
V GS = 10V
R DS(on) , NORMALIZED
TJ = 125C
1.4
1.2
1.2
1
25C
1
0.8
0.8
-55C
0.6 -50
-25
0 25 50 75 100 T J , JUNCTION TEMPERATURE (C)
125
150
0.6 0 5 10 I D , DRAIN CURRENT (A) 15 20
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
30
1.2
GATE-SOURCE THRESHOLD VOLTAGE
V DS = 10V
25
T = -55C J
125C
1.1 1 0.9 0.8 0.7 0.6 0.5 -50
ID , DRAIN CURRENT (A)
20
15
10
5
0 0.5
1
1.5 2 2.5 3 3.5 V GS , GATE TO SOURCE VOLTAGE (V)
4
4.5
V th, NORMALIZED
25C
V DS = V GS I D = 250A
-25
0 25 50 75 100 T J , JUNCTION TEMPERATURE (C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDH853N Rev. C
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
I D = 250A
I S , REVERSE DRAIN CURRENT (A)
30 10
V GS = 0V
1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150
BV DSS , NORMALIZED
1
TJ = 125C 25C -55C
0.1
0.01
0.001
0.0001 0 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature.
3000 2000
10
I D = 7.6A C iss
VGS , GATE-SOURCE VOLTAGE (V) 8
V DS = 10V 20V
CAPACITANCE (pF)
1000
15V
6
C oss
500 300 200
4
f = 1 MHz V GS = 0 V
C rss
2
100 0 .1
0 .2 V
DS
0 .5 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V)
20
30
0 0 10 20 Q g , GATE CHARGE (nC) 30 40
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on
t off tr
90%
t d(off)
90%
V IN
D
RL V OUT
VOUT
10%
tf
VGS
R GEN
10%
INVERTED
G
DUT 90% S
V IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDH853N Rev. C
Typical Electrical and Thermal Characteristics (continued)
35 30 25 20 STEADY-STATE POWER DISSIPATION (W)
2.5
V DS =10V
, TRANSCONDUCTANCE (SIEMENS)
T J = -55C
2
1a
25C
1.5
125C
15 10 5 0 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30
1
1b 1c
0.5
4.5"x5" FR-4 Board TA = 2 5 C
o
FS
0 0
Still Air
g
0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 )
1
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area.
9 I D , STEADY-STATE DRAIN CURRENT (A)
50 30 10
1a
8 I D, DRAIN CURRENT (A)
RD
S(O
N)
LIM
IT
10 1m 10 10 1s 0m
0u
s
3 1 0.3
7
s ms s
6
1b 1c
VGS = 1 0 V
0.1 0.03 0.01 0.1
5
4.5"x5" FR-4 Board TA = 2 5 C Still Air VG S = 1 0 V
o
SINGLE PULSE R J A =See Note1c TA = 25C
0.2 0.5 V
10 s DC
4 0 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA (in ) 1
DS
1 2 5 10 , DRAIN-SOURCE VOLTAGE (V)
30
50
Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area.
Figure 16. Maximum Safe Operating Area.
1
TRANSIENT THERMAL RESISTANCE
0.5 0.3 0.2 0.1 0.05
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2 0.1 0.05 0.02
R JA (t) = r(t) * R JA R JA = See Note 1c
P(pk)
t1 TJ - T
t2
0.03 0.02 0.01 0.0001
0.01 Single Pulse
= P * R JA (t) Duty Cycle, D = t 1 / t 2
A
0.001
0.01
0.1 t 1 , TIME (sec)
1
10
100
300
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
NDH853N Rev. C

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