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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCESAT IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector-emitter saturation voltage Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V IC = 0.2 A; IB = 20 mA Tmb 25 C IC = 0.2 A; IB(on) = 20 mA TYP. BUX 0.28 MAX. 86P 800 400 1 0.5 1 42 87P 1000 450 V V V A A W s UNIT PINNING - SOT82 PIN 1 2 3 DESCRIPTION emitter collector base PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VEBO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. BUX -40 MAX. 86P 800 400 87P 1000 450 5 0.5 1 0.2 0.3 0.3 42 150 150 V V V A A A A A W C C UNIT Tmb 25 C 1 Turn-off current. November 1995 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 100 MAX. 3 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEsat VCEsat VBEsat hFE VCEOsust PARAMETER CONDITIONS MIN. 26 400 450 TYP. 50 MAX. 100 1.0 1 0.8 1 1 125 UNIT A mA mA V V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 5 V; IC = 0 A Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA IC = 0.2 A; IB = 20 mA Base-emitter saturation voltage IC = 0.2 A; IB = 20 mA DC current gain IC = 50 mA; VCE = 5 V Collector-emitter sustaining voltage IC = 100 mA; BUX86P IBoff = 0; L = 25 mH BUX87P DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load). ton ts tf tf Turn-on time Turn-off storage time Turn-off fall time Turn-off fall time CONDITIONS IC = 0.2 A; IBon = 20 mA; -IBoff = 40 mA; VCC = 250 V TYP. MAX. UNIT s s s s Tmb = 95 C 0.25 2 0.28 - 0.5 3.5 1.3 November 1995 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P VCC 10 Zth / (K/W) BUX86P RL VIM 0 tp T RB T.U.T. 0.5 1 0.2 0.1 0.05 0.1 0.02 P D tp D= tp T t T D= 0 0.01 1.0E-06 0.0001 t/s 0.01 1 Fig.1. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 90 % 90 % VBESAT / V 0.9 BUX86P IC 10 % ts ton toff IBon 10 % tr 30ns 0.6 0 5 0.7 0.8 IC = 0.2 A 0.1 A 50 mA tf IB -IBoff 10 IB / mA 15 20 Fig.2. Switching times waveforms with resistive load. Fig.5. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 VCESAT / V BUX86P 8 IC = 50 mA 0.1 A 0.2 A 6 4 2 0 20 40 60 80 100 Tmb / C 120 140 0 0 5 10 15 IB / mA 20 25 30 Fig.3. Normalised power dissipation. PD% = 100PD/PD 25 C = f (Tmb) Fig.6. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC November 1995 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P hFE 1000 VCE=5V Tj=25 C BUX86P Typical gain Limit gain 10 IC / A BUX87P 100 = 0.01 1 10 ICM max IC max 1 0.001 0.01 IC / A 0.1 1 0.1 II tp = 1 ms Fig.7. Typical DC current gain. hFE = f(IC); parameter VCE. Arrows indicate conditions protected by 100% test. I hFE 1000 VCE=5V Tj=95 C BUX86P Typical gain Limit gain 0.01 10 ms DC 100 0.001 10 10 100 VCE / V 1000 Fig.10. Forward bias safe operating area. Tmb = 25 C I II NB: Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. 1 0.001 0.01 IC / A 0.1 1 Fig.8. Typical DC current gain. hFE = f(IC); parameter VCE hFE 1000 VCE=5V Tj= -40 C BUX86P Typical gain Limit gain 100 10 1 0.001 0.01 IC / A 0.1 1 Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE November 1995 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P MECHANICAL DATA Dimensions in mm Net Mass: 0.8 g mounting base 2.8 2.3 7.8 max 3.75 3.1 2.5 11.1 max 1) 2.54 max 1.2 15.3 min 1 4.58 0.5 2 3 2.29 1) Lead dimensions within this zone uncontrolled. 0.88 max Fig.11. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Rev 1.100 |
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