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| Semiconductor IRFP244, IRFP245, IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. July 1998 Features * 15A and 14A, 275V and 250V * rDS(ON) = 0.28 and 0.34 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250VDC Rated, 120VAC Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRFP244 IRFP245 IRFP246 IRFP247 PACKAGE TO-247 TO-247 TO-247 TO-247 BRAND IRFP244 IRFP245 IRFP246 IRFP247 G S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 2211.2 5-1 IRFP244, IRFP245, IRFP246, IRFP247 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP244 250 250 15 9.7 60 20 150 1.2 550 -55 to 150 300 260 IRFP245 250 250 14 8.8 56 20 150 1.2 550 -55 to 150 300 260 IRFP246 275 275 15 9.7 60 20 150 1.2 550 -55 to 150 300 260 IRFP247 275 275 14 8.8 56 20 150 1.2 550 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . .VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) 250 275 VGS(TH) IDSS VGS = VDS , ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V TJ = 125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRFP244, IRFP245 IRFP246, IRFP247 Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) IRFP244, IRFP246 IRFP245, IRFP247 Gate to Source Leakage Drain to Source On Resistance (Note 2) IRFP244, IRFP246 IRFP245, IRFP247 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) 15 14 - 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 10A (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 15A, VDS = 0.8 x Rated BVDSS , IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is Essentially Independent of Operating Temperature VDS 50V, ID = 10A (Figure 12) VDD = 125V, ID 15A, RG = 9.1, VGS = 10V, RL = 8 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0.24 11 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 IRFP244, IRFP245, IRFP246, IRFP247 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured fRom the Drain Lead, 6mm (0.25in) From Package to the Center of Die Measured from The Source Lead, 6mm (0.25in) from the Header to the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Junction to Case Junction to Ambient RJC RJA Free Air Operation - - 0.83 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 15 60 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 15A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 14A, dISD/dt = 100A/s TJ = 25oC, ISD = 14A, dISD/dt = 100A/s 150 1.6 300 3.4 1.8 640 7.2 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.0H, RG = 25, peak IAS = 15A. See Figures 15, 16. 5-3 IRFP244, IRFP245, IRFP246, IRFP247 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) Unless Otherwise Specified 15 12 IRFP244, IRFP246 0.8 0.6 0.4 0.2 0 9 IRFP245, IRFP247 6 3 0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC , NORMALIZED THERMAL IMPEDANCE 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 SINGLE PULSE 10-3 10-5 PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 0.1 1 10 10-4 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 103 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 102 IRFP244/246 IRFP245/247 IRFP244/246 10 IRFP245/247 1ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 IRFP244, IRFP245 102 10ms DC IRFP246, IRFP247 103 10s 100s 25 VGS = 10V PULSE DURATION = 80s VGS = 6.0V ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 20 15 VGS = 5.5V 10 VGS = 5.0V 5 VGS = 4.5V VGS = 4.0V 0 0 25 50 75 100 125 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRFP244, IRFP245, IRFP246, IRFP247 Typical Performance Curves 25 PULSE DURATION = 80s 20 VGS = 10V VGS = 6.0V Unless Otherwise Specified (Continued) IDS(ON) , DRAIN TO SOURCE CURRENT (A) 100 VDS 50V PULSE DURATION = 80s ID , DRAIN CURRENT (A) 10 15 VGS = 5.5V 10 VGS = 5.0V 5 VGS = 4.5V VGS = 4.0V 0 0 2 4 6 8 10 VDS , DRAIN TO SOURCE VOLTAGE (V) TJ = 150oC 1 TJ = 25oC 0.1 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS 2.5 FIGURE 7. TRANSFER CHARACTERISTICS PULSE DURATION = 80s NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3.0 ID = 10A VGS = 10V 2.4 rDS(ON), DRAIN TO SOURCE 2.0 ON RESISTANCE () VGS = 10V 1.5 1.8 1.0 1.2 0.5 VGS = 20V 0.6 0 0 15 30 45 60 75 ID , DRAIN CURRENT (A) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 NOTE: Heating effect of 2s pulse is minimal. TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.15 C, CAPACITANCE (pF) 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD 2400 CRSS = CGD COSS CDS + CGD CISS 1.05 1800 0.95 1200 COSS 0.85 600 CRSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRFP244, IRFP245, IRFP246, IRFP247 Typical Performance Curves 15 gfs , TRANSCONDUCTANCE (S) VDS 50V PULSE DURATION = 80s TJ = 25oC Unless Otherwise Specified (Continued) 12 ISD , SOURCE TO DRAIN CURRENT (A) 100 10 9 TJ = 150oC 6 TJ = 150oC 1 TJ = 25oC 3 0 0 5 10 15 20 25 ID , DRAIN CURRENT (A) 0.1 0 0.4 0.8 1.2 1.6 2.0 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 15A 16 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE VDS = 50V 12 VDS = 125V VDS = 200V 8 4 0 0 12 24 36 48 60 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRFP244, IRFP245, IRFP246, IRFP247 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr VDS RL 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% VGS FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD Qg(TOT) VGS 12V BATTERY 0.2F 50k 0.3F SAME TYPE AS DUT Qgs Qgd D G DUT 0 VDS Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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