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| High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = 2.3 V C G G C miniBLOC, SOT-227 B E153432 G E E IXDN 55N120 E IXDN 55N120 D1 C E = Emitter x, G = Gate, C = Collector E = Emitter x E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C IGBT Diode Maximum Ratings 1200 1200 20 30 100 62 124 ICM = 100 VCEK < VCES 10 450 220 2500 -40 ... +150 -40 ... +150 V V V V A A A A s W W V~ C C x Either Emitter terminal can be used as Main or Kelvin Emitter Features q q q q q q 50/60 Hz; IISOL 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package miniBLOC Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Advantages q q q Space savings Easy to mount with 2 screws High power density Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 6 6.5 V V Typical Applications q q q q V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 2 mA, VCE = VGE VCE = VCES q 3.8 mA mA 500 nA AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0 V, VGE = 20 V IC = 55 A, VGE = 15 V 2.3 2.8 V 032 (c) 2000 IXYS All rights reserved 1-4 IXDN 55N120 IXDN 55N120 D1 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3300 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 500 220 240 100 Inductive load, TJ = 125C IC = 55 A, VGE = 15 V, VCE = 600 V, RG = 22 W 70 500 70 8.4 6.2 pF pF pF nC ns ns ns ns mJ mJ 0.28 K/W Package with heatsink compound 0.1 K/W Dim. A B C D E F G H Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 miniBLOC, SOT-227 B Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCK M4 screws (4x) supplied Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM trr trr RthJC Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.4 1.9 2.6 V V A A A ns ns 0.6 K/W J K L M N O P Q R S T U V W IF = 55 A, VGE = 0 V IF = 55 A, VGE = 0 V, TJ = 125C TC = 25C TC = 90C IF = 55 A, -diF/dt = 400 A/s, VR = 600 V VGE = 0 V, TJ = 125C IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 110 60 40 200 40 (c) 2000 IXYS All rights reserved 2-4 IXDN 55N120 IXDN 55N120 D1 120 TJ = 25C A 100 IC 120 A TJ = 125C 100 IC 80 11V 11V VGE=17V 15V 13V VGE=17V 15V 13V 80 60 40 9V 60 40 20 0 0.0 9V 20 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 VCE = 20V A TJ = 25C 100 IC 180 TJ = 125C A 150 IF TJ = 25C 80 60 40 20 0 5 6 7 8 9 10 VGE 120 90 60 30 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V VGE 15 120 VCE = 600V IC = 50A 300 ns trr A IRM trr 80 200 10 40 5 TJ = 125C VR = 600V IF = 50A IRM 100 0 0 50 100 150 200 QG 0 250 nC 0 200 400 600 IXDN55N120 0 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 IXDN 55N120 IXDN 55N120 D1 24 mJ Eon 120 ns 90 td(on) t 60 tr VCE = 600V VGE = 15V RG = 22W TJ = 125C 12 mJ 10 Eoff 600 Eoff ns 500 td(off) 400 t 300 200 100 0 0 20 40 60 80 IC 100 A 18 8 6 4 VCE = 600V VGE = 15V RG = 22W TJ = 125C 12 6 Eon 30 2 0 tf 0 0 20 40 60 IC 0 80 100 A Fig. 7 Typ. turn on energy and switching times versus collector current 20 mJ Eon 15 240 td(on) Eon ns 180 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 10 mJ 1500 ns 1200 t 900 600 300 tf 0 VCE = 600V VGE = 15V IC = 50A TJ = 125C 8 6 VCE = 600V VGE = 15V IC = 50A TJ = 125C td(off) Eoff 10 tr 120 4 60 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 RG W 0 0 10 20 30 40 50 60 70 80 90 100 RG W Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 ICM 1 K/W 0.1 ZthJC RG = 22W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 80 60 40 20 0 0 200 400 600 800 1000 1200 V VCE diode 0.01 0.001 0.0001 IGBT single pulse IXDN55N120 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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