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| Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2 IXGT 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C Maximum Ratings 600 600 20 30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) C (TAB) G C E C = Collector, TAB = Collector W C C C C Features G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 25C 1.8 V A mA nA V VGE(th) ICES IGES VCE(sat) IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 24 A, VGE = 15 V (c) 2003 IXYS All rights reserved DS99122(11/03) IXGH 30N60B2 IXGT 30N60B2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 26 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 115 40 66 IC = 24 A, VGE = 15 V, VCE = 300 V 9 22 13 Inductive load, TJ = 25C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 15 110 82 0.32 13 Inductive load, TJ = 125C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 17 0.22 200 150 0.9 200 150 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 24 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns e Dim. 0.6 mJ ns ns mJ ns ns mJ 0.65 K/W Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 30N60B2 IXGT 30N60B2 Fig. 1. Output Characteristics @ 25 Deg. C 50 45 40 35 VGE = 15V 13V 11V 300 Fig. 2. Extended Output Characteristics @ 25 deg. C VGE = 15V 13V 11V 9V 250 I C - Amperes 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 5V 7V I C - Amperes 200 150 100 9V 7V 50 5V 0 0 2 4 6 8 10 12 14 16 18 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 50 45 40 VGE = 15V 13V 11V 1.3 V C E - Volts Fig. 4. Dependence of V CE(sat) on Tem perature 9V 1.2 I C = 48A I C - Amperes 35 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 5V 7V V C E (sat)- Normalized V GE = 15V 1.1 1.0 I C = 24A 0.9 0.8 I C = 12A 0.7 -50 -25 0 25 50 75 100 125 150 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.2 3.9 3.6 TJ = 25C 250 225 200 TJ - Degrees Centigrade Fig. 6. Input Adm ittance 3 2.7 2.4 2.1 1.8 1.5 1.2 5 6 7 8 I C - Amperes 3.3 VC E - Volts I C = 48A 24A 12A 175 150 125 100 75 50 25 0 TJ = -40C 25C 125C 9 10 11 12 13 14 15 16 17 4 5 6 7 8 9 10 11 12 13 V G E - Volts (c) 2003 IXYS All rights reserved V G E - Volts IXGH 30N60B2 IXGT 30N60B2 Fig. 7. Transconductance 45 40 35 TJ = -40C 25C 125C 2.7 2.4 2.1 I C = 48A TJ = 125C VGE = 15V VCE = 400V Fig. 8. Dependence of Turn-Off Energy on RG E off - milliJoules g f s - Siemens 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 225 250 1.8 1.5 1.2 0.9 0.6 0.3 0 0 I C = 24A I C = 12A 10 20 30 40 50 60 70 80 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on IC 2 1.8 1.6 R G = 5 VGE = 15V VCE = 400V 2 1.8 1.6 R G = 5 VGE = 15V VCE = 400V R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature E off - MilliJoules 1.2 1 0.8 0.6 0.4 0.2 0 10 15 20 25 30 E off - milliJoules 1.4 TJ = 125C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 I C = 48A I C = 24A TJ = 25C I C = 12A 25 35 45 55 65 75 85 95 105 115 125 35 40 45 50 I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 700 260 TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 240 Switching Time - nanosecond Switching Time - nanosecond 600 td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 400V 220 200 180 160 140 120 100 80 60 TJ = 25C TJ = 125C td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 400V 500 400 300 I C = 12A I C = 24A 200 100 0 10 I C = 48A 20 30 40 50 60 70 80 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10 15 20 I C - Amperes 25 30 35 40 45 50 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 30N60B2 IXGT 30N60B2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature 220 200 180 160 140 120 100 80 25 35 45 I C = 48A 24A 12A 3 15 Fig. 14. Gate Charge VCE = 300V I C = 24A I G = 10mA Switching Time - nanosecond td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 400V I C = 12A 24A 48A 12 VG E - Volts 55 65 75 85 95 105 115 125 9 6 0 TJ - Degrees Centigrade 0 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 f = 1 MHz C ies 1000 Capacitance - p F C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance 1.0 R (th) J C - (C/W) 0.5 0.1 1 10 Pulse Width - milliseconds 100 1000 (c) 2003 IXYS All rights reserved |
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