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SemiWell Semiconductor Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 20 A ) High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC )
STF20A60
UL : E228720
Symbol
2.T2

3.Gate
1.T1
TO-220F
General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 66 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 20 183/200 165 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V C C g
Aug, 2003. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
1/6
STF20A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -10 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 30 A, Inst. Measurement
Ratings Min.
0.2 10
Typ.
25
Max.
2.0 1.4 30 30 30 1.5 1.5 1.5 2.5
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
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STF20A60
Fig 1. Gate Characteristics Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
PGM (5W) Gate Voltage [V] PG(AV) (0.5W) 25
10
10
2
TJ = 125 C
o
IGM (2A)
0
10
1
TJ = 25 C
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
= 180 o = 150 o = 120 = 90 = 60 = 30
10
o o o o
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
130 120 110 100 90
25
Power Dissipation [W]
20

360
2
15
: Conduction Angle

2
= 30 = 60 = 90
o o o o
80 70 60
5
360
: Conduction Angle
0
= 120 o = 150 o = 180
12 16 20
0
4
8
12
16
20
24
0
4
8
24
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
240
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
200
Surge On-State Current [A]
160
VGT (25 C)
60Hz
VGT (t C)
o
o
120
1
80
50Hz
V V V
+ GT1 _ GT1 _ GT3
40
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STF20A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I I
+ GT1 _ GT1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
1
I
0.1 -50 0 50
_ GT3
100
o
150
0.1 -2 10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V
A

RG
6V
A

RG
6V
A
V
V
V
RG
Test Procedure
Test Procedure
Test Procedure
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STF20A60
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 D 2 3 J K M
G
1. T1 2. T2 3. Gate
N O
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STF20A60
TO-220F Package Dimension, Forming mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O P
Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 2 3 N J K O P M
G D
1. T1 2. T2 3. Gate
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