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| New Horizontal Deflection Transistor Series for TV s Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced features contribute to higher performing, more reliable home-use TVs that cost less. s Features q Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V q Low loss:VCE(sat)<3V q Broad area of safe-operation. s Spacifications Package Now Compact packaging Parameter Part No. 2SC5657 2SC5622/2SC5572 2SC5518/2SC5523 2SC5514/2SC5521 2SC5517/2SC5522 2SC5519/2SC5524 2SC5516/2SC5584 2SC5546 2SC5553/2SC5597 2SC5591/2SC5591A 2SC5686 Electric Characteristics Recommended condition Ic (A) 4 6 7 13 6 8 20 18 22 20 20 VCBO (V) Damper diode fH (kHz) 15.75 Screen size (inch) TOP-3E TOP-3E/3D TOP-3E/3D TOP-3E/3D TOP-3E/3D TOP-3E/3D TOP-3E/3L TOP-3E TOP-3E/3L TOP-3E TOP-3E Possible Possible Possible Possible Possible Possible to 14 Built-in to 25 to 29 1500 Not built-in 32 15.75 to 32 to 29 to 36 1600/1700 1500 Built-in 32 1700 1700/1800 2000 Not built-in to 36 64 to 36 s Applications qTVs qWide-screen TVs qDigital TVs | The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements. Semiconductor Company, Matsushita Electronics Corporation 1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan E00065BE Tel. (075) 951-8151 http://www.mec.panasonic.co.jp New publication, effective from Sep 12 2000. Horizontal Deflection Output Transistor 2SC5514 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Rating 1500 1500 600 7 23 *3 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V V A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 13 6 50*1 3.0*2 5.450.3 5.450.3 3.30.3 0.70.1 5 W C C 1 2 3 -55 to +150 *1)TC=25C *2)Ta=25C (Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current ICBO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO Conditions VCB=1000V,IE=0 VCB=1500V,IE=0 VEB=7V,IC=0 VCE=5V,IC=6.5A IC=6.5A,IB=1.63A IC=6.5A,IB=1.63A VCE=10V,IC=0.1A,f=0.5MHz IC=6.5A,IB1=1.63A,IB2=-3.25A IC=6.5A,IB1=1.63A,IB2=-3.25A min 5 - typ 3 - 2.0 150 TOP-3E 5.50.3 A max 50 1 50 9 3 1.5 0.2 2.7 Unit A mA A IEBO fFE VCE(sat) VBE(sat) fT Tf Tstg Transition frequency Fall time Storage time MHz s s 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5516 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Rating 1500 1500 600 7 30*3 20 8 70*1 3.5*2 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V V A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 5.450.3 3.30.3 0.70.1 5 W C C 1 2 3 -55 to +150 *1)TC=25C *2)Ta=25C (Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO ICBO IEBO fFE VCE(sat) VBE(sat) fT Tf Tstg Conditions VCB=1000V,IE=0 VCB=1500V,IE=0 VEB=7V,IC=0 VCE=5V,IC=10A IC=10A,IB=2.5A IC=10A,IB=2.5A VCE=10V,IC=0A,f=0.5MHz IC=10A,IB1=2.5A,IB2=-5.0A IC=10A,IB1=2.5A,IB2=-5.0A min 7 - typ 3 - 2.0 150 TOP-3E 5.50.3 A max 50 1 50 14 3 1.5 0.2 2.7 Unit A mA A Transition frequency Fall time Storage time MHz s s 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5517 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Tstg Rating 1600 1600 7 20 6 3 40*1 3*2 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V A A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 5.450.3 3.30.3 0.70.1 130 -55 to +150 C C 5 1 2 3 *1)TC=25C ,*2)Ta=25C(Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C ) Parameter Collector cutoff current ICBO Emitter to base voltage Forward current transfer ratio Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO Conditions VCB=1000V,IE=0 VCB=1600V,IE=0 IE=500mA,IC=0 VCE=5V,IC=1A VCE=5V,IC=4A IC=4A,IB=0.8A IC=4A,IB=0.8A VCE=10V,IC=0.1A,f=0.5MHz IC=4.5A,IB1=0.9A,IB2=-1.8A IC=4.5A,IB1=0.9A,IB2=-1.8A min 7 7 4.5 0.3 3.8 - typ 3 - 2.0 TOP-3E 5.50.3 W max 50 1 20 8 3 1.5 0.5 5 -2 Unit A mA V VEBO fFE fFE VCE(sat) VBE(sat) fT Tstg Tf VF Transition frequency Storage time Fall time Diode characteristics MHz s s V IF=4A 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5518 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Rating 1500 1500 5 14*3 7 3.5 40*1 3*2 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V A A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 5.450.3 3.30.3 0.70.1 150 -55 to +150 C C 5 1 2 3 *1)TC=25C ,*2)Ta=25C(Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C ) Parameter Collector cutoff current ICBO Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO Conditions VCB=1000V,IE=0 VCB=1500V,IE=0 IE=500mA,IC=0 VCE=5V,IC=5A IC=5A,IB=1A IC=5A,IB=1A VCE=10V,IC=0.1A,f=0.5MHz IC=5A,IB1=1A,IB2=2A IC=5A,IB1=1A,IB2=2A min 5 5 - typ 3 - 2.0 TOP-3E 5.50.3 W max 50 1 9 3 1.5 0.5 5 -2 Unit A mA V VEBO fFE VCE(sat) VBE(sat) fT Tstg Tf VF Transition frequency Storage time Fall time Diode characteristics MHz s s V IF=5A 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5519 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Rating 1700 1700 5 16*3 8 3 50*1 3*2 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V A A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 5.450.3 3.30.3 0.70.1 5 150 -55 to +150 C C 1 2 3 *1)TC=25C ,*2)Ta=25C(Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current ICBO Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO Conditions VCB=1000V,IE=0 VCB=1700V,IE=0 IE=500mA,IC=0 VCE=5V,IC=6A IC=6A,IB=1.2A IC=6A,IB=1.2A VCE=10V,IC=0.1A,f=0.5MHz IC=6A,IB1=1.2A,IB2=-2.4A IC=6A,IB1=1.2A,IB2=-2.4A min 5 5 - typ 3 - 2.0 TOP-3E 5.50.3 W max 50 1 10 3 1.5 5.0 0.5 -2 Unit A mA V VEBO fFE VCE(sat) VBE(sat) fT Tstg Tf VF Transition frequency Storage time Fall time Diode characteristics MHz s s V IF=6A 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5572 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Rating 1500 1500 7 12*3 6 3 40*1 3*2 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V A A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 5.450.3 3.30.3 0.70.1 5 150 -55 to +150 C C 1 2 3 *1)TC=25C ,*2)Ta=25C(Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current ICBO Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO Conditions VCB=1000V,IE=0 VCB=1500V,IE=0 IE=500mA,IC=0 VCE=5V,IC=4A IC=4A,IB=0.8A IC=4A,IB=0.8A VCE=10V,IC=0.1A,f=0.5MHz IC=4A,IB1=0.8A,IB2=-1.6A IC=4A,IB1=0.8A,IB2=-1.6A min 7 5 - typ 3 - 2.0 TOP-3E 5.50.3 W max 50 1 9 3 1.5 5.0 0.5 -2 Unit A mA V VEBO fFE VCE(sat) VBE(sat) fT Tstg Tf VF Transition frequency Storage time Fall time Diode characteristics MHz s s V IF=4A 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5584 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Rating 1500 1500 600 7 30*3 20 8 150 3.5*2 *1 Unit 20.00.5 V V 26.00.5 6.0 10.0 2.0 4.0 3.30.2 5.00.3 3.0 3.0 V V 1.5 1.5 Solder Dip A A A W C C 20.00.5 2.5 2.00.3 3.00.3 1.00.2 2.70.3 0.60.2 5.450.3 10.90.5 150 -55 to +150 1 2 3 TOP-3L *1)TC=25C *2)Ta=25C (Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO ICBO IEBO fFE VCE(sat) VBE(sat) fT Tf Tstg Conditions VCB=1000V,IE=0 VCB=1500V,IE=0 VEB=7V,IC=0 VCE=5V,IC=10A IC=10A,IB=2.5A IC=10A,IB=2.5A VCE=10V,IC=0.1A,f=0.5MHz IC=10A,IB1=2.5A,IB2=-5.0A IC=10A,IB1=2.5A,IB2=-5.0A min 7 - typ 3 - max 50 1 50 14 3 1.5 0.2 2.7 2.0 1.5 Unit A mA A V V MHz s s Transition frequency Fall time Storage time Horizontal Deflection Output Transistor 2SC5591 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Rating 1700 1700 600 7 30*3 20 11 70*1 3.5*2 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V V A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 5.450.3 3.30.3 0.70.1 5 W C C 1 2 3 -55 to +150 *1)TC=25C *2)Ta=25C (Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO ICBO IEBO fFE VCE(sat) VBE(sat) fT Tf Tstg Conditions VCB=1000V,IE=0 VCB=1700V,IE=0 VEB=7V,IC=0 VCE=5V,IC=10A IC=10A,IB=2.5A IC=10A,IB=2.5A VCE=10V,IC=0.1A,f=0.5MHz IC=10A,IB1=2.5A,IB2=-5.0A IC=10A,IB1=2.5A,IB2=-5.0A min 7 - typ 3 - 2.0 150 TOP-3E 5.50.3 A max 50 1 50 14 3 1.5 0.2 3.0 Unit A mA A Transition frequency Fall time Storage time MHz s s 23.4 22.00.5 V V Horizontal Deflection Output Transistor 2SC5657 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Rating 1500 1500 7 8*3 4 2 40*1 3*2 Unit 4.5 15.50.5 3.20.1 10.0 3.00.3 V V V A A A 5 26.50.5 5 23.4 22.00.5 2.0 1.2 5 18.60.5 5 5 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 3.30.3 0.70.1 5.450.3 5.50.3 W C C 5 150 -55 to +150 1 2 3 *1)TC=25C ,*2)Ta=25C(Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO ICBO VEBO fFE VCE(sat) VBE(sat) fT Tstg Tf VF Conditions VCB=1000V,IE=0 VCB=1500V,IE=0 IE=500mA,IC=0 VCE=5V,IC=2A IC=2A,IB=0.5A IC=2A,IB=0.5A VCE=10V,IC=0.1A,f=0.5MHz IC=2A,IB1=0.4A,IB2=-0.8A IC=2A,IB1=0.4A,IB2=-0.8A min 7 5 - typ 3 - 2.0 TOP-3E max 50 1 9 5 1.5 5.0 0.5 -2 Unit A mA V V V MHz s s V Transition frequency Storage time Fall time Diode characteristics Horizontal Deflection Output Transistor 2SC5686 s Absolute Maximum Ratings Unit:mm Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Rating 2000 2000 600 7 30 *3 Unit 4.5 15.50.5 3.20.1 3.00.3 10.0 V V V V A A 5 5 26.50.5 2.0 1.2 5 5 5 18.60.5 4.0 2.00.2 1.10.1 2.0 0.70.1 20 11 70*1 3.5*2 5.450.3 5.450.3 3.30.3 0.70.1 5 W C C 1 2 3 -55 to +150 *1)TC=25C *2)Ta=25C (Without heat sink) *3)Non-repetitive peak collector current. s Electrical Characteristics(TC=25C) Parameter Collector cutoff current ICBO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol ICBO Conditions VCB=1000V,IE=0 VCB=2000V,IE=0 VEB=7V,IC=0 VCE=5V,IC=10A IC=10A,IB=2.5A IC=10A,IB=2.5A VCE=10V,IC=0.1A,f=0.5MHz IC=10A,IB1=2.5A,IB2=-5.0A IC=10A,IB1=2.5A,IB2=-5.0A min 7 - typ 3 - 2.0 150 TOP-3E 5.50.3 A max 50 1 50 14 3 1.5 0.2 3.0 Unit A mA A IEBO fFE VCE(sat) VBE(sat) fT Tf Tstg Transition frequency Fall time Storage time MHz s s 23.4 22.00.5 V V |
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