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| MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A C K GUP EUP S - DIA. (2 TYP.) H N H GVP EVP GWP EWP P D J U N GUN EUN GVN EVN GWN EWN V W L E R Q B R Q R P TAB #250, t = 0.8 TAB #110, t = 0.5 G M F R P GuP EuP U GvP EvP V GwP EwP W Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM20TF-24H is a 1200V (VCES), 20 Ampere Six-IGBT Module. Type CM Current Rating Amperes (20) 20 VCES Volts (x 50) 24 GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.660.01 3.19 1.77 1.18 1.11 1.05 0.85 0.83 Millimeters 107.0 93.00.2 81.0 45.0 30.0 28.2 26.6 21.5 21.0 Dimensions K L M N P Q R S Inches 0.79 0.71 0.69 0.69 0.63 0.55 0.30 0.22 Dia. Millimeters 20.0 18.0 17.5 17.5 16.0 14.0 7.5 Dia. 5.5 Sep.1998 MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - Viso CM20TF-24H -40 to 150 -40 to 125 1200 20 20 40* 20 40* 250 1.47 ~ 1.96 260 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m Grams Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 2mA, VCE = 10V IC = 20A, VGE = 15V IC = 20A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 20A, VGE = 15V IE = 20A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.5 2.25 100 - Max. 1.0 0.5 7.5 3.4** - - 3.5 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 20A, diE/dt = -40A/s IE = 20A, diE/dt = -40A/s VCC = 600V, IC = 20A, VGE1 = VGE2 = 15V, RG = 16 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.15 Max. 4 1.4 0.8 100 200 150 350 250 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.63 1.40 0.058 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 40 15 12 11 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 32 Tj = 25C 32 VCE = 10V Tj = 25C Tj = 125C 102 7 Tj = 25C 5 3 2 101 7 5 3 2 100 1.0 24 10 24 16 16 8 7 9 8 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) CAPACITANCE, Cies, Coes, Cres, (pF) 5 Cies COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 10 VCE = 10V Tj = 25C Tj = 125C Tj = 25C 4 8 IC = 40A 100 Coes 3 6 IC = 20A 2 4 10-1 Cres 1 2 IC = 8A VGE = 0V 100 10-1 100 101 102 0 0 8 16 24 32 40 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) tf SWITCHING TIME, (ns) REVERSE RECOVERY TIME, t rr, (ns) 103 di/dt = -40A/sec Tj = 25C 101 20 IC = 20A GATE-EMITTER VOLTAGE, VGE, (VOLTS) 16 VCC = 400V VCC = 600V Irr 12 102 tr td(on) VCC = 600V VGE = 15V RG = 16 Tj = 125C 102 t rr 100 8 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 40 80 120 160 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.63C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 1.4C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME,(s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
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