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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Zener Voltage : 27V(Typ.) E35A27VBS, E35A27VBR STACK SILICON DIFFUSED DIODE A POLARITY E35A27VBS (+ Type) E35A27VBR (- Type) K H MAXIMUM RATING (Ta=25... ) CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Non-Repetitive Peak Reverse Surge Current (10mS) Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL IF(AV) IFSM IRSM VRSM VRM Tj Tstg RATING 35 300 (60Hz) 42 UNIT A A A G B JD F EI DIM A B C D E F G H I J K MILLIMETERS 11.5 MAX 12.75+0.09-0.00 _ 1.3 + 0.04 _ 4.2+ 0.2 _ 8.0 + 0.2 TYP 0.5 _ 10.0 + 0.2 _ 0.4+ 0.1x45 8.5 MAX 0.2+0.1 _ 28.35+ 0.5 B-PF 22 20 -40215 -40215 V V ... ... ELECTRICAL CHARACTERISTICS (Ta=25... ) CHARACTERISTIC Forward Voltage Zener Voltage Reverse Current Transient Thermal Resistance Breakdown Voltage Temperature Coefficient Reverse Leakage Current Under High Temperature Temperature Resistance SYMBOL VF VZ IR * VF Vbr **T HIR Rth TEST CONDITION IFM=100A IZ=10mA VR=20V IFM=100A, IM=100mA, Pw=100mS Irsm=42A, Pw=10mS IZ=10mA Ta=150... VR=20V , DC total junction to case MIN. 24 TYP. 27 15.7 MAX. 1.10 29 0.2 70 34 100 0.8 UNIT V V *IA mV V mV/... *IA ... /W 2002. 4. 16 Revision No : 4 1/1 |
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