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| STN5PF02V P-channel 20V - 0.065 - 4.2A - SOT-223 2.5V - Drive STripFETTM II Power MOSFET General features Type STN5PF02V VDSS 20V RDS(on) <0.080 ID 4.2A 2 Ultra low threshold gate drive (2.5V) Standard outline for easy automated surface mount assembly 1 2 3 SOT-223 Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature sizeTM" strip-based process. The resulting transistor shows extremely extremely low on-resistance when driven at 2.5V. Internal schematic diagram Applications Switching application Order codes Part number STN5PF02V Marking N5PF02V Package SOT-223 Packaging Tape & reel August 2006 Rev 3 1/12 www.st.com 12 Contents STN5PF02V Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STN5PF02V Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Max. operating junction temperature Storage temperature Value 20 8 4.2 2.6 17 2.5 -55 to 150 Unit V V A A A W C PTOT Tj Tstg 1. Pulse width limited by safe operating area Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed Thermal resistance Parameter Max value 50 90 Unit C/W C/W Table 2. Symbol Rthj-pcb (1) Thermal resistance junction-pc board Rthj-amb Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch pad, 2oz Cu and tc< 10sec 3/12 Electrical characteristics STN5PF02V 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating,@125C VGS = 8V VDS = VGS, ID = 250A VGS = 4.5V, ID = 2.1A VGS = 2.5V, ID = 2.1A 0.45 0.065 0.085 0.080 0.10 Min 20 1 10 100 Typ. Max Unit V A A nA V Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Test conditions Min Typ. 6.6 412 179 42.5 4.5 0.73 1.75 6 Max Unit S pF pF pF nC nC nC Forward transconductance VDS = 15V , ID = 2.5A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 15V, f = 1 MHz, VGS = 0 VDD = 10V, ID = 4.2A, VGS = 2.5V (see Figure 13) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 4/12 STN5PF02V Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 10V, ID = 2.1A RG = 4.7 , VGS = 2.5V (see Figure 12) Min Typ. 11 47 38 20 Max Unit ns ns ns ns Table 6. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.2A, VGS = 0 ISD = 4.2A, di/dt=100A/s, VDD = 16V, Tj = 150C (see Figure 14) 32 12.8 0.8 Test conditions Min Typ. Max Unit 4.2 17 1.2 A A V ns nC A VSD (2) trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 5/12 Electrical characteristics STN5PF02V 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal inpedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STN5PF02V Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit STN5PF02V 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for diode recovery behaviour 8/12 STN5PF02V Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STN5PF02V SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10 o DIM. inch MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.130 0.264 0.138 0.276 0.146 0.287 10o MIN. TYP. MAX. 0.071 0.031 0.122 0.013 0.264 TYP. P008B 10/12 STN5PF02V Revision history 5 Revision history Table 7. Date 20-Jun-2005 13-Dec-2005 04-Aug-2006 Revision history Revision 1 2 3 First release Final version New template Changes 11/12 STN5PF02V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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