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4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
* * * * * * Isolation Test Voltage 5300 VRMS Interfaces with Common Logic Families Input-output Coupling Capacitance < 0.5 pF Industry Standard Dual-in-line 6-pin Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
i179004
A C NC
1 2 3
6B 5C 4E
e3
Pb
Pb-free
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
Applications
AC Mains Detection Reed relay driving Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground Isolation Logic Coupling with High Frequency Noise Rejection
These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note: For additional design information see Application Note 45 Normalized Curves
Order Information
Part 4N25 4N26 4N27 4N28 4N25-X006 4N25-X007 4N25-X009 4N26-X006 4N26-X007 4N26-X009 4N27-X007 4N27-X009 4N28-X009 Remarks CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 10 %, DIP-6 CTR > 10 %, DIP-6 CTR > 20 %, DIP-6 400 mil (option 6) CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) CTR > 20 %, DIP-6 400 mil (option 6) CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) CTR > 10 %, SMD-6 (option 7) CTR > 10 %, SMD-6 (option 9) CTR > 10 %, SMD-6 (option 9)
Description
The 4N25 family is an Industry Standard Single Channel Phototransistor Coupler.This family includes the 4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through special Vishay manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option1.
For additional information on the available options refer to Option Information.
Document Number 83725 Rev. 1.4, 26-Jan-05
www.vishay.com 1
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation t < 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current Collector currrent Power dissipation t < 1.0 ms Test condition Symbol VCEO VEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance DIN IEC 112/VDE0303, part 1 VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature max.10 s, dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm mm
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Document Number 83725 Rev. 1.4, 26-Jan-05
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse
1) 1)
Test condition IF = 50 mA VR = 3.0 V VR = 0 V
Symbol VF IR CO
Min
Typ. 1.3 0.1 25
Max 1.5 100
Unit V A pF
current1)
Capacitance
Indicates JEDEC registered values
Output
Parameter Collector-base breakdown voltage1) Collector-emitter breakdown voltage1) Emitter-collector breakdown voltage1) ICEO(dark)1) VCE = 10 V, (base open) 4N25 4N26 4N27 4N28 ICBO(dark)1) Collector-emitter capacitance
1)
Test condition IC = 100 A IC = 1.0 mA IE = 100 A
Part
Symbol BVCBO BVCEO BVECO
Min 70 30 7.0
Typ.
Max
Unit V V V
5.0 5.0 5.0 10 2.0 CCE 6.0
50 50 50 100 20
nA nA nA nA nA pF
VCB = 10 V, (emitter open) VCE = 0
Indicates JEDEC registered values
Coupler
Parameter Isolation voltage
1)
Test condition Peak, 60 Hz
Part 4N25 4N26 4N27 4N28
Symbol VIO VIO VIO VIO VCE(sat) RIO CIO
Min 2500 1500 1500 500
Typ.
Max
Unit V V V V
Saturation voltage, collectoremitter Resistance, input output1) Capacitance (input-output)
1)
ICE = 2.0 mA, IF = 50 mA VIO = 500 V f = 1.0 MHz
0.5 100 0.5
V G pF
Indicates JEDEC registered values
Current Transfer Ratio
Parameter DC Current Transfer Ratio1) Test condition VCE = 10 V, IF = 10 mA Part 4N25 4N26 4N27 4N28
1)
Symbol CTRDC CTRDC CTRDC CTRDC
Min 20 20 10 10
Typ. 50 50 30 30
Max
Unit % % % %
Indicates JEDEC registered value
Document Number 83725 Rev. 1.4, 26-Jan-05
www.vishay.com 3
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors Switching Characteristics
Parameter Rise and fall times Test condition VCE = 10 V, IF = 10 mA, RL = 100 Symbol tr, tf Min Typ. 2.0 Max Unit s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4
VF - Forward Voltage - V
1.5 TA = -55C TA = 25C
NCTR - Normalized CTR
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
i4N25_01
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.0
TA=50C
0.5
NCTR(SAT) NCTR
TA = 85C
0.0 1 10 IF - Forward Current - mA 100
i4N25_03
.1
1 10 IF- LED Current - mA
100
Figure 1. Forward Voltage vs. Forward Current
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current
1.5
NCTR - Normlized CTR NCTR - Normalized CTR
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.5
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.0
TA=25C
1.0
TA=70C
0.5
NCTR(SAT) NCTR
0.5
NCTR(SAT) NCTR
0.0 0
i4N25_02
0.0 .1 100
i4N25_04
1 10 IF - LED Current - mA
1 10 IF - LED Current - mA
100
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current
Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current
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Document Number 83725 Rev. 1.4, 26-Jan-05
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
1.5
NCTR - Normalized CTR
NCTRcb - Normalized CTRcb
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V
1.5
Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C
1.0
TA=85C
1.0
0.5
NCTR(SAT) NCTR
0.5 25C 50C 70C 0.0 .1 1 10 100
0.0 .1 1 10 IF - LED Current - mA 100
IF - LED Current - mA
i4N25_08
i4N25_05
Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current
Figure 8. Normalized CTRcb vs. LED Current and Temp.
35
Ice - Collector Current - mA
10
Normalized to: IF=10 mA, TA=25C
30 25 20 15 10 5 0 0 10 20 30 40 50 60 IF - LED Current - mA 70C 25C 85C 50C
Normalized Photocurrent
1
1 0.
Nib, TA=-20C Nib, TA= 25C Nib, TA= 50C Nib, TA= 70C
0.01 .1
i4N25_09
1
10
100
i4N25_06
IF - LED Current - mA
Figure 6. Collector-Emitter Current vs. Temperature and LED Current
Figure 9. Normalized Photocurrent vs. IF and Temp.
10
Iceo - Collector-Emitter - nA
5 4
1.2
NHFE - Normalized HFE
70C
10 10 10 10 10
3 2 1 0
1.0 -20C 0.8
25C
Vce = 10 V Typical
0.6
Normalized to: Ib=20 A, Vce=10 V, TA=25C
10 -1 10 -2 -20 0 20 40 60 80 TA - Ambient Temperature - C 100
0.4
i4N25_10
1
10 100 Ib - Base Current - A
1000
i4N25_07
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature
Document Number 83725 Rev. 1.4, 26-Jan-05
www.vishay.com 5
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
NHFE(sat) - Normalized Saturated HFE
1.5 Normalized to: Vce=10 V, Ib=20 A T A =25C
F=10 KHz, DF=50% VCC = 5.0 V
70C 1.0 25C -20C 0.5
50C
RL VO
Vce=0.4 V 0.0 1 10 100 1000
i4N25_14
IF=1 0 mA
i4N25_11
Ib - Base Current - A
Figure 11. Normalized HFE vs. Base Current and Temp.
Figure 14. Switching Schematic
1000
tPLH - Propagation Delay - s
2.5
tPHL - Propagation Delay - s
IF =10 mA,TA=25C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0
10 tPLH
1.5
1 .1
i4N25_12
1.0 1 10 100
RL - Collector Load Resistor - k
Figure 12. Propagation Delay vs. Collector Load Resistor
IF
tD VO tR tPLH VTH=1.5 V tPHL tS tF
i4N25_13
Figure 13. Switching Timing
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Document Number 83725 Rev. 1.4, 26-Jan-05
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors Package Dimensions in Inches (mm)
For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section. For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
14770
DIP-6 Package Dimensions
2 1 pin one ID
3 .248 (6.30) .256 (6.50) 4
5
6
ISO Method A
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004
.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)
.300 (7.62) typ.
18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81)
.114 (2.90) .130 (3.0)
Document Number 83725 Rev. 1.4, 26-Jan-05
www.vishay.com 7
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
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Document Number 83725 Rev. 1.4, 26-Jan-05
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83725 Rev. 1.4, 26-Jan-05
www.vishay.com 9

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