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 BAY80
Vishay Telefunken
Silicon Epitaxial Planar Diode
Applications
General purpose
94 9367
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV Tj Tstg Value 150 120 1 625 250 200 175 -65...+200 Unit V V A mA mA mA C C
tp=1ms
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W
Document Number 85553 Rev. 2, 01-Apr-99
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BAY80
Vishay Telefunken Electrical Characteristics
Tj = 25_C Test Conditions IF=0.1mA IF=10 mA IF=50 mA IF=100mA IF=150mA Reverse current VR=120V VR=120 V, Tj=150C Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms Diode capacitance VR=0, f=1MHz Differential forward resistance IF=10mA Reverse recovery time IF=IR=30mA, iR=3mA, RL=100W Parameter Forward voltage g Type Symbol VF VF VF VF VF IR IR V(BR) CD rf trr Min 0.4 0.63 0.73 0.78 Typ Max 0.52 0.78 0.92 1 1.07 100 100 Unit V V V V V nA
mA
V
150 1.5 5 5 50
pF
W
ns
Characteristics (Tj = 25_C unless otherwise specified)
1000 IF - Forward Current ( mA ) I R - Reverse Current ( mA ) 100 Scattering Limit 10 1000 Tj = 25C 100 Scattering Limit 10
1 VR = VRRM
0.1 0.01 0 40 80 120
1
0.1 160 200
94 9085
0
0.4
0.8
1.2
1.6
2.0
94 9084
Tj - Junction Temperature ( C )
VF - Forward Voltage ( V )
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
www.vishay.de * FaxBack +1-408-970-5600 2 (4)
Document Number 85553 Rev. 2, 01-Apr-99
BAY80
Vishay Telefunken
rf - Differential Forward Resistance (W ) 1000
100
Tj = 25C 10
1 0.1
94 9089
1
10
100
IF - Forward Current ( mA )
Figure 3. Differential Forward Resistance vs. Forward Current
Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366
1.7 max.
Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g
26 min.
3.9 max.
26 min.
Document Number 85553 Rev. 2, 01-Apr-99
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BAY80
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 85553 Rev. 2, 01-Apr-99


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