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| BBY66... Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature BBY66-02V BBY66-05 BBY66-05W 3 2 D1 D2 1 2 Type BBY66-02V* BBY66-05 BBY66-05W* Package SC79 SOT23 SOT323 Configuration single common cathode common cathode LS(nH) 0.6 1.8 1.4 Marking h O1s / O2s** OBs * Preliminary **For differences see next page Capacitance groups Maximum Ratings at TA = 25C, unless otherwise specified Symbol VR IF Top Tstg Value 12 50 -55 ... 150 -55 ... 150 Unit V mA C 1 Nov-14-2002 BBY66... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 65 C AC Characteristics Diode capacitance1) VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz CT Unit max. nA typ. IR 20 200 pF 66 33 19.7 12 68.7 35.4 20.95 12.7 5.41 0.25 71.5 38 22.2 13.5 0.4 Capacitance ratio VR = 1 V, VR = 4.5 V VR = 1 V, f = 470 MHz 1Capacitance CT1 /CT4.5 rS 5 - CT/groups C1V C1V groups at 1V, coded 01; 02 (only BBY66-05) 01 02 66pF 69pF 68.5pF 71.5pF min max Deliveries contain either CT group 01 or group 02 (marked on reel). No direct order of CT groups possible 2 Nov-14-2002 Series resistance BBY66... Diode capacitance CT = f = 1MHz 80 pF (VR ) Temperature coefficient of the diode 1200 60 ppm/C 50 TC C CT 40 600 30 300 20 10 0 0 1 2 3 V 5 0 1 2 VR T A = Parameter 10 pA 4 TA=+85C 10 3 IR 10 2 10 1 10 0 2 3 4 5 6 Reverse current I R = (V R) TA=+65C TA=+25C 7 8 9 10 V 12 VR 3 capacitance TCc = (VR ) 3 V 5 VR Nov-14-2002 |
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