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| VISHAY GSD2004A Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features * Silicon Epitaxial Planar Diode * Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability 2 1 1 2 3 Mechanical Data Case: SOT-23 (TO-236AB) Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box 3 17033 Parts Table Part GSD2004A Ordering code GSD2004A-GS18 or GSD2004A-GS08 DBA Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Continuous reverse voltage Peak repetitive reverse voltage Peak repetitive reverse current Forward current (continuous) Peak repetitive forward current Non-repetitive peak forward current Power dissipation 1) Test condition Symbol VR VRRM IRRM IF IRFM Value 240 300 200 225 625 4.0 1.0 3501) Unit V V mA mA mA A A mW tp = 1 s tp = 1 s IFSM IFSM Ptot Device on Fiberglass Substrate, see layout on bottom of second page Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Typical thermal resistance junction to ambiant air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj TS Value 3571) 150 - 65 to + 150 Unit C/W C C Device on Fiberglass Substrate, see layout on bottom of second page Document Number 85727 Rev. 1.3, 08-Jul-04 www.vishay.com 1 GSD2004A Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Forward voltage Diode capacitance Reverse recovery time 1) VISHAY Test condition IR = 100 A VR = 240 V VR = 240 V, Tj = 150 C IF = 20 mA IF = 100 mA VF = VR = 0, f = 1 MHz IF = IA = 30 mA, Irr = 3.0 mA, RL = 100 Symbol VBR IR IR VF VF Ctot trr Min 300 Typ. Max 100 100 Unit V nA A V V pF ns 0.83 0.87 1.00 5.0 50 Device on Fiberglass Substrate, see layout on bottom of second page Typical Characteristics (Tamb = 25 C unless otherwise specified) 100 I F - Forward Current ( mA ) T J = 150 C 10 100 C 1 25 C 0.1 100 200 300 400 500 600 700 800 900 1000 18543 VF - Forward Voltage ( mV ) Figure 1. Typical Instantaneous Forward Characteristics IR - Reverse Leakage Current ( nA ) 10 5 T J = 150 C 10 4 100 C 10 3 10 2 25 C 10 0 50 100 150 200 250 18544 VR - Reverse Voltage ( V ) Figure 2. Typical Reverse Characteristics www.vishay.com 2 Document Number 85727 Rev. 1.3, 08-Jul-04 VISHAY Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) GSD2004A Vishay Semiconductors 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Package Dimensions in mm (Inches) 1.15 (.045) 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092) 0.95 (.037) ISO Method E 3.1 (.122) 2.8 (.110) 0.4 (.016) 3 1.43 (.056) 1.20(.047) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) 1 0.95 (.037) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85727 Rev. 1.3, 08-Jul-04 www.vishay.com 3 GSD2004A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85727 Rev. 1.3, 08-Jul-04 |
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