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| IL755/ ILD755 Vishay Semiconductors Optocoupler, Photodarlington Output, AC Input, High Gain (Single, Dual Channel) Single Channel Features * * * * * AC or Polarity Insensitive Inputs Built-in Reverse Polarity Input Protection Industry Standard DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A/C 1 C/A 2 NC 3 Dual Channel A1 C2 C3 6B 5C 4E 8E 7C 6C 5E Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 i179037 A4 e3 Pb Pb-free NPN photodarlington per channel. The IL755 is single channel Darlington optocouplers. The ILD755 has two isolated channels in a single DIP package. Order Information Applications Designed for applications requiring detection or monitoring of AC signals. IL755-1 IL755-2 ILD755-1 ILD755-2 IL755-1X007 Part Remarks CTR > 750 %, DIP-6 CTR > 1000 %, DIP-6 CTR > 750 %, DIP-8 CTR > 1000 %, DIP-8 CTR > 750 %, SMD-6 (option 7) Description The IL755/ ILD755 are bidirectional input optically coupled isolators. They consist of two Gallium Arsenide infrared emitting diodes coupled to a silicon For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Forward continuous current Power dissipation Derate linearly from 25 C Test condition Symbol IF Pdiss Value 60 100 1.33 Unit mA mW mW/C Document Number 83641 Rev. 1.4, 26-Oct-04 www.vishay.com 1 IL755/ ILD755 Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Power dissipation IL755-1 IL755-2 ILD755-1 ILD755-2 Derate linearly from 25 C IL755-1 IL755-2 ILD755-1 ILD755-2 Test condition Part Symbol BVCEO BVCBO Pdiss Pdiss Pdiss Pdiss Value 60 60 200 200 150 150 2.6 2.6 2.0 2.0 Unit V V mW mW mW mW mW/C mW/C mW/C mW/C Coupler Parameter Isolation test voltage (PK) Total power dissipation (LED plus detector) Test condition t = 1.0 sec. IL755-1 IL755-2 ILD755-1 ILD755-2 Derate linearly from 25 C IL755-1 IL755-2 ILD755-1 ILD755-2 Creepage Clearance Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb Part Symbol VISO Ptot Ptot Ptot Ptot Value 7500/5300 250 250 400 400 3.0 3.0 3.0 3.0 7 7 - 55 to + 150 - 55 to + 100 10 Unit VACPK/VRMS mW mW mW mW mW/C mW/C mW/C mW/C mm mm C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 10 mA Symbol VF Min Typ. 1.2 Max 1.5 Unit V Output Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Test condition IC = 1.0 mA IC = 10 A VCE = 10 V Symbol BVCEO BVCBO ICEO Min 60 60 Typ. 75 90 10 100 Max Unit V V nA www.vishay.com 2 Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors Coupler Parameter Collector-emitter saturation voltage Test condition IF = 10 mA, IC = 10 mA Symbol VCE(sat) Min Typ. Max 1.0 Unit V Current Transfer Ratio Parameter Current Transfer Ratio Test condition VCE = 5.0 V, IF = 2.0 mA Part IL755-1 ILD755-1 VCE = 5.0 V, IF = 1.0 mA IL755-2 ILD755-2 Symbol CTR CTR CTR CTR Min 750 750 1000 1000 Typ. Max Unit % % % % Switching Characteristics Parameter Rise time Fall time Rise time Fall time Test condition VCC = 10 V, IF = 2.0 mA, RL = 100 VCC = 10 V, IF = 2.0 mA, RL = 100 VCC = 10 V, IF = 1.0 mA, RL = 100 VCC = 10 V, IF = 1.0 mA, RL = 100 Part IL755-1 ILD755-1 IL755-1 ILD755-1 IL755-2 ILD755-2 IL755-2 ILD755-2 Symbol tr tr tf tf tr tr tf tf Min Typ. 50 50 50 50 70 70 70 70 Max Unit s s s s s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 60 NCTRce - Normalized CTRce I F - LED Forward Current - mA 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 iil755_02 40 20 0 -20 -40 -60 25C 85C Normalized to: Vce = 5 V IF = 1 mA -55C Vce = 5 V Vce = 1 V .1 1 10 100 IF - LED Current - mA iil755_01 V F - LED Forward Voltage - V Figure 1. LED Forward Current vs.Forward Voltage Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current Document Number 83641 Rev. 1.4, 26-Oct-04 www.vishay.com 3 IL755/ ILD755 Vishay Semiconductors 3.0 NCTRce - Normalized CTRce HFE - Forward Transfer Gain Normalized to: Vce = 5 V IF = 2 mA 10000 Vce = 5 V 8000 6000 4000 2000 0 .01 100 iil755_06 2.5 2.0 1.5 Vce = 5 V 1.0 0.5 Vce = 1 V 0.0 .1 1 10 IF - LED Current - mA Vce = 1 V .1 1 10 100 Ib - Base Current - A iil755_03 Figure 3. Normalized Non-saturated and Saturated CTRCE vs. LED Current Figure 6. Non-Saturated and Saturated HFE vs. Base Current 100 Normalized to: Vce = 5 V Vce = 5 V tpLH - Low/High Propagation Delay - S 80 Vcc = 5V Vth = 1.5 V 60 220 i 40 470 20 100 0 0 iil755_07 1.0 k NIce - Normalized Ice 10 IF = 2 mA Vce = 1V 1 .1 .01 .1 iil755_04 10 1 IF - LED Current - mA 100 5 10 15 20 IF - LED Current - mA Figure 4. Normalized Non-Saturated and Saturated ICE vs. LED Current Figure 7. Low to High Propagation Delay vs. Collector Load Resistance and LED Current 10 Normalized to: IF = 10 mA Vce = 5 V Vce = 5 V tpHL - High/Low Propagation delay - s 20 1k 15 Vcc = 5 V Vth = 1.5 V 10 100 5 NIce - Normalized Ice 1 Vce = 1V .1 .01 .001 .1 iil755_05 10 1 IF - LED Current - mA 100 iil755_08 0 0 5 10 15 20 IF - LED Current - mA Figure 5. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current Figure 8. High to low Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 4 Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors IF F=10 KHz, DF=50% VO tR tD tPLH VTH=1.5 V tPHL iil755_09 VCC=10 V RL VO tS tF iil755_10 I F =1 mA Figure 9. Switching Waveform Figure 10. Normalized Non-Saturated and Saturated CTRCE vs. LED Current Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Document Number 83641 Rev. 1.4, 26-Oct-04 www.vishay.com 5 IL755/ ILD755 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Option 7 .300 (7.62) TYP . .255 (6.5) .248 (6.3) .028 (0.7) MIN. .180 (4.6) .160 (4.1) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. 18447 www.vishay.com 6 Document Number 83641 Rev. 1.4, 26-Oct-04 IL755/ ILD755 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83641 Rev. 1.4, 26-Oct-04 www.vishay.com 7 |
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