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Data Sheet No.PD60144-K IPS0151(S) FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 25m (max) 50V 35A 1.5s Description The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET(R) POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Packages 3-Lead D2 Pak IPS0151S Typical Connection 3-Lead TO-220 PS0151 L o ad D IN c o n t ro l R in se rie s ( if n e e d e d ) L o g ic sig n a l S (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS0151(S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum Input voltage Maximum IN current Diode max. continuous current (1) rth=62oC/W IPS0151 rth=5oC/W rth=80oC/W Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation (1) Min. -- -0.3 -10 -- -- -- -- -- -- -- -- -55 -40 -- Max. 47 7 +10 2.8 35 2.2 45 2 1.56 4 0.5 150 +150 300 Units V mA Test Conditions TO220 free air A TO220 with Rth=5oC/W SMD220 Std footprint IPS015135 IPS0151S (rth=62 oC/W) IPS0151 (rth=80oC/W) IPS0151S ESD1 ESD2 T stor. Tj max. Tlead Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature Lead temperature (soldering, 10 seconds) W C=100pF, R=1500, kV C=200pF, R=0, L=10H o C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance free air junction to case with standard footprint with 1" square footprint junction to case Min. -- -- -- -- -- Typ. 55 2 60 35 2 Max. Units Test Conditions -- a -- -- -- TO-220 o C/W D2PAK (SMD220) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151 (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S Rin Recommended resistor in series with IN pin Tr-in (max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application Notes. Vds (max) VIH VIL I ds Min. -- 4 0 -- -- 0.2 -- 0 Max. 35 6 0.5 4.3 3.8 5 1 1 Units V A k S kHz 2 www.irf.com IPS0151(S) Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Idss1 @Tj=25oC Min. o Typ. 20 35 0.5 5 52 55 8.1 1.6 90 130 Max. Units Test Conditions 25 45 25 50 56 60 9.5 2 200 250 m Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC A Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered ON state resistance Tj = 25 C Tj = 150oC Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current 10 -- 0 0 47 50 7 1 25 50 Idss2 @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vin th Iin, -on Iin, -off V A Switching Electrical Characteristics Vcc = 14V, Resistive Load = 3, Rinput = 50, 100us pulse, Tj = 25oC, (unless otherwise specified). Symbol Parameter Ton Tr Trf T off Tf Qin Turn-on delay time Rise time Time to (final Rds(on) 1.3%) Turn-off delay time Fall time Total gate charge Min. 0.05 0.2 -- 0.8 0.4 -- Typ. Max. Units Test Conditions 0.25 0.9 3.8 1.5 1.1 30 0.6 1.5 -- 2 2 -- See figure 2 s See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd Vreset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) Min. -- 20 1.5 2 -- Typ. 165 35 2.3 10 400 Max. Units Test Conditions -- 50 3 40 -- o C A V s See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V J www.irf.com 3 IPS0151(S) Functional Block Diagram All values are typical DRAIN 47 V 200 200 k IN 8.1 V 80 A S R Q Q I sense T > 165c I > Isd SOURCE Lead Assignments 2 (D) 2 (D) 1 3 In D S 1 In 2 D 3 S TO-220 IPS0151 Part Number D2PAK (SMD220) IPS0151S 4 www.irf.com IPS0151(S) Vin 5V 0V Vin 10 % t < T reset I shutdown t > T reset 90 % Tr-in Ids Isd 90 % Ids 10 % Td on tr Td off tf T Tsd (165 c) T shutdown Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L Rem : V load is negative during demagnetization V load + R D 14 V - Ids Vds clamp Vin ( Vcc ) 5v 0v IN S Vds Ids Vds ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5 IPS0151(S) All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 60 50 40 30 20 Tj = 25oC 200% 180% 160% 140% 120% Tj = 150oC 100% 80% 60% 40% 20% 0% -50 -25 10 0 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 Figure 5 - Rds ON (m) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj (oC) 8 ton delay 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 rise tim e 130% final rdson 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 toff delay fall tim e 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6 www.irf.com IPS0151(S) 100 100 delay off fall tim e 10 10 1 1 delay o n r is e t i me 0 .1 10 100 1 3 0% r ds o n 0 .1 10 1000 10000 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us) Vs IN Resistor () Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor () 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 Ilim 25C Isd 25C 50 45 40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V) Figure 12 - Ishutdown (A) Vs Temperature (oC) www.irf.com 7 IPS0151(S) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -50 rth = 5C/W rth = 15C/W SMD220 1'' footprint SMD220 std. footprint 100 Current path capability should be above this 10 Load characteristic should be below this curve T=25C 0 50 100 150 200 T=100C 1 Figure 13 - Max.Cont. Ids (A) Vs Ambient Temperature (oC) Figure 14 - Max.Cont. Ids (A) Vs Ambient Temperature (oC) 100 single pulse 100 Hz rth=60C/W dT=25C 1kHz rth=60C/W dT=25C 100 10 10 1 Single pulse 1 0 .1 rth free air TO220, s td footprint SMD220 rth junction to case = 1.8C/W 1E+00 1E+01 1E+02 1E+03 Vbat = 14 V Tjini = T sd 0 .0 1 1E-05 1E-04 1E-03 1E-02 1E-01 0.1 0 .0 0 1 0 .0 1 0 .1 1 10 100 Figure 15 - Iclamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS0151/IPS051S 8 www.irf.com IPS0151(S) 200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Iin,on Iin,off 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 Vin clam p @ 10m A 0 25 50 75 100 125 150 Vds clam p @ Isd Figure 17 - Input current (A) Vs Junction (oC) Figure 18 - Vin clamp and V clamp2 (V) Vs Tjunction (oC) 16 14 12 10 8 6 4 2 0 -50 Treset rise tim e fall tim e -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and Treset (s) Vs Tjunction (oC) www.irf.com 9 IPS0151(S) Case Outline 2 NOTES: 2X 3-Lead TO-220AB 01-6024 00 IRGB 01-3026 01 (TO-220AB) 10 www.irf.com IPS0151(S) Case Outline 3-Lead D2PAK 01-6022 00 115-0088 10 (TO-263AB) www.irf.com 11 IPS0151(S) Tape & Reel - D2PAK (SMD220) 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 11/13/2001 12 www.irf.com |
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