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 Data Sheet No.PD60144-K
IPS0151(S)
FULLY PROTECTED POWER MOSFET SWITCH
Features
* * * * *
Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff 25m (max) 50V 35A 1.5s
Description
The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET(R) POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
Packages
3-Lead D2 Pak IPS0151S
Typical Connection
3-Lead TO-220 PS0151
L o ad D
IN
c o n t ro l
R in se rie s ( if n e e d e d )
L o g ic sig n a l
S
(Refer to lead assignment for correct pin configuration)
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1
IPS0151(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness.
Symbol Parameter
Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum Input voltage Maximum IN current Diode max. continuous current (1) rth=62oC/W IPS0151 rth=5oC/W rth=80oC/W Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation
(1)
Min.
-- -0.3 -10 -- -- -- -- -- -- -- -- -55 -40 --
Max.
47 7 +10 2.8 35 2.2 45 2 1.56 4 0.5 150 +150 300
Units
V mA
Test Conditions
TO220 free air A TO220 with Rth=5oC/W SMD220 Std footprint
IPS015135 IPS0151S
(rth=62 oC/W) IPS0151 (rth=80oC/W) IPS0151S ESD1 ESD2 T stor. Tj max. Tlead Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature Lead temperature (soldering, 10 seconds)
W C=100pF, R=1500, kV C=200pF, R=0, L=10H
o
C
Thermal Characteristics
Symbol Parameter
Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance free air junction to case with standard footprint with 1" square footprint junction to case
Min.
-- -- -- -- --
Typ.
55 2 60 35 2
Max. Units Test Conditions
-- a -- -- -- TO-220
o
C/W
D2PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151 (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S Rin Recommended resistor in series with IN pin Tr-in (max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application Notes. Vds (max) VIH VIL I ds
Min.
-- 4 0 -- -- 0.2 -- 0
Max.
35 6 0.5 4.3 3.8 5 1 1
Units
V
A k S kHz
2
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IPS0151(S)
Static Electrical Characteristics
(Tj = 25oC unless otherwise specified.)
Symbol Parameter
Rds(on) Idss1
@Tj=25oC
Min.
o
Typ.
20 35 0.5 5 52 55 8.1 1.6 90 130
Max. Units Test Conditions
25 45 25 50 56 60 9.5 2 200 250 m Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC A Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V
over-current triggered
ON state resistance Tj = 25 C Tj = 150oC Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current
10 -- 0 0 47 50 7 1 25 50
Idss2
@Tj=25oC
V clamp 1 V clamp 2 Vin clamp Vin th Iin, -on Iin, -off
V
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 3, Rinput = 50, 100us pulse, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Ton Tr Trf T off Tf Qin Turn-on delay time Rise time Time to (final Rds(on) 1.3%) Turn-off delay time Fall time Total gate charge
Min.
0.05 0.2 -- 0.8 0.4 --
Typ. Max. Units Test Conditions
0.25 0.9 3.8 1.5 1.1 30 0.6 1.5 -- 2 2 -- See figure 2 s See figure 2 nC Vin = 5V
Protection Characteristics
Symbol Parameter
T sd I sd Vreset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note)
Min.
-- 20 1.5 2 --
Typ.
165 35 2.3 10 400
Max. Units Test Conditions
-- 50 3 40 --
o
C A V s
See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V
J
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IPS0151(S)
Functional Block Diagram
All values are typical
DRAIN
47 V
200 200 k
IN
8.1 V 80 A
S R
Q Q I sense T > 165c
I > Isd
SOURCE
Lead Assignments
2 (D) 2 (D)
1 3 In D S
1 In
2 D
3 S
TO-220 IPS0151 Part Number
D2PAK (SMD220) IPS0151S
4
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IPS0151(S)
Vin
5V 0V
Vin 10 %
t < T reset I shutdown t > T reset
90 %
Tr-in
Ids
Isd
90 %
Ids
10 %
Td on tr
Td off tf
T
Tsd
(165 c)
T shutdown
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin L
Rem : V load is negative during demagnetization V load +
R D
14 V -
Ids
Vds clamp
Vin
( Vcc )
5v 0v
IN S
Vds Ids
Vds
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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IPS0151(S)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
60 50 40 30 20
Tj = 25oC
200% 180% 160% 140% 120%
Tj = 150oC
100% 80% 60% 40% 20% 0% -50 -25
10 0 0 1 2 3 4 5 6 7 8
0
25
50
75 100 125 150 175
Figure 5 - Rds ON (m) Vs Input Voltage (V)
Figure 6 - Normalised Rds ON (%) Vs Tj (oC)
8 ton delay 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 rise tim e 130% final rdson
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5
toff delay fall tim e
6
7
8
Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V)
Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V)
6
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IPS0151(S)
100
100
delay off fall tim e
10
10
1
1
delay o n r is e t i me
0 .1 10 100
1 3 0% r ds o n
0 .1 10 1000 10000 100 1000 10000
Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us) Vs IN Resistor ()
Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor ()
50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 Ilim 25C Isd 25C
50 45 40 35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V)
Figure 12 - Ishutdown (A) Vs Temperature (oC)
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IPS0151(S)
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -50
rth = 5C/W rth = 15C/W SMD220 1'' footprint SMD220 std. footprint
100
Current path capability should be above this
10
Load characteristic should be below this curve
T=25C
0 50 100 150 200
T=100C
1
Figure 13 - Max.Cont. Ids (A) Vs Ambient Temperature (oC)
Figure 14 - Max.Cont. Ids (A) Vs Ambient Temperature (oC)
100
single pulse 100 Hz rth=60C/W dT=25C 1kHz rth=60C/W dT=25C
100
10
10
1 Single pulse
1
0 .1
rth free air TO220, s td footprint SMD220 rth junction to case = 1.8C/W
1E+00 1E+01 1E+02 1E+03
Vbat = 14 V Tjini = T sd
0 .0 1 1E-05 1E-04 1E-03 1E-02 1E-01
0.1
0 .0 0 1 0 .0 1 0 .1 1 10 100
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS0151/IPS051S
8
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IPS0151(S)
200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Iin,on Iin,off
120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 Vin clam p @ 10m A 0 25 50 75 100 125 150 Vds clam p @ Isd
Figure 17 - Input current (A) Vs Junction (oC)
Figure 18 - Vin clamp and V clamp2 (V) Vs Tjunction (oC)
16 14 12 10 8 6 4 2 0 -50
Treset rise tim e fall tim e
-25
0
25
50
75
100 125 150
Figure 19 - Turn-on, Turn-off, and Treset (s) Vs Tjunction (oC)
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IPS0151(S)
Case Outline
2
NOTES:
2X
3-Lead TO-220AB
01-6024 00 IRGB 01-3026 01 (TO-220AB)
10
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IPS0151(S)
Case Outline
3-Lead D2PAK
01-6022 00 115-0088 10 (TO-263AB)
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11
IPS0151(S)
Tape & Reel - D2PAK (SMD220)
01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 11/13/2001
12
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