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| Rectifier Diodes MA2J114 Silicon epitaxial planar type Unit : mm For small power rectification I Features 0.5 0.1 K A 0.625 2 0.16 - 0.06 + 0.1 1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 150 150 200 600 Unit V V mA mA 1.25 0.1 0.7 0.1 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 150 -55 to +150 A C C 1 Anode 2 Cathode S-Mini Type Package (2-pin) Marking Symbol: 1E I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 150 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 200 1.2 Unit nA V pF Note) Rated input/output frequency: 3 MHz 0.3 * Small S-mini type package, allowing high-density mounting * High reverse voltage VR 1 MA2J114 IF V F 1 000 100C 25C 100 1.6 1.4 Rectifier Diodes VF Ta 100 IR V R Ta = 150C 100C 10 Forward current IF (mA) Forward voltage VF (V) Ta = 150C 10 -20C 1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA Reverse current IR (nA) IF = 200 mA 1 1 0.1 25C 0.01 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 0.001 0 40 80 120 160 200 0 40 80 120 160 200 240 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR Ta 100 VR = 150 V 3 Ct VR 1 000 f = 1 MHz Ta = 25C 300 100 30 10 3 1 0.3 IF(surge) tW Ta = 25C IF(surge) tW Non repetitive 100 V 10 V 10 2 1 0.1 1 0.01 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (nA) This graph shows actual values, not guaranteed values. 0.001 -40 0 0 40 80 120 160 200 0 40 80 120 160 200 240 0.1 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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