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| MS1453 RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS * * * * * * * Features 800-900 MHz 24 VOLTS COMMON EMITTER GOLD METALIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION POUT = 30 W MIN. WITH 7.5 dB GAIN DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 50 45 5.0 5.0 43 +200 -65 to +150 Unit V V V A W C C Thermal Data RTH(J-C) Thermal Resistance Junction-case 3.0 C/W MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1453 ELECTRICAL SPECIFICATIONS (Tcase = 25C) 25 STATIC Symbol BVCBO BVCEO BVEBO ICBO hFE IC = 100 mA IC = 40 mA IE = 10 mA VCB = 24 V VCE = 10 V Test Conditions IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 200 mA Min. 48 25 3.5 --20 Value Typ. ----------- Max. ------2.0 100 Unit V V V mA --- DYNAMIC Symbol POUT GP C COB f = 960 MHz f = 960 MHz f = 960 MHz f = 1 MHz Test Conditions PIN = 5.3 W PIN = 5.3 W PIN = 5.3 W VCB = 24 V VCC = 24 V VCC = 24 V VCC = 24 V Min. 30 7.5 45 --- Value Typ. ----50 --- Max. ------48 Unit W dB % pf MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1453 PACKAGE MECHANICAL DATA MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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