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| PTF 102027 40 Watts, 925-960 MHz GOLDMOS (R) Field Effect Transistor Description The PTF 102027 is a 40-watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. * Performance at 960 MHz, 26 Volts - Output Power = 40 Watts - Power Gain = 15.0 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability * * * Typical Power Output and Efficiency vs. Input Power 70 70 Efficiency 60 50 40 Power Output (Watts) 60 50 40 30 20 10 0 0.0 0.5 Efficiency (%) 1234 5600 50 1020 27 VDD = 26 V IDQ = 250 mA f = 960 MHz 30 20 10 0 Power Output 1.0 1.5 2.0 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 250 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 14.5 40 40 10:1 Typ 15 45 53 -- Max -- -- -- -- Units dB Watts % -- e 1 PTF 102027 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 2.0 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 100 mA VDS = 5 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 125 0.714 -40 to +150 1.4 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) 18 Efficiency (%) 60 50 Gain (dB) 40 Broadband Test Fixture Performance Gain Efficiency 20 70 Output Power & Efficiency 16 14 60 50 Gain (dB) Gain 16 14 12 10 925 12 10 8 6 4 2 925 VDD = 26 V IDQ = 250 mA POUT = 40 W 40 30 20 -15 10 Return Loss (dB) 0 -30 -10 960 VDD = 26 V IDQ = 250 mA 930 935 940 945 950 955 30 20 960 930 935 940 945 950 955 Frequency (MHz) Frequency (MHz) 2 Return Loss Efficiency (%) 18 70 e Output Power vs. Supply Voltage 50 17 IDQ = 325 mA IDQ = 250 mA PTF 102027 Power Gain vs. Output Power Output Power (Watts) 45 Power Gain (dB) 16 40 35 30 25 20 22 24 26 28 30 IDQ = 250 mA f = 960 MHz 15 IDQ = 175 mA VDD = 26 V f = 960 MHz 14 0 1 10 100 1000 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -20 120 100 Capacitance vs. Supply Voltage 7 6 VDD = 26 V, IDQ = 250 mA -30 3rd Order Cds and Cgs (pF) f1 = 959 MHz, f2 = 960 MHz 5th IMD (dBc) 80 60 40 20 VGS = 0 V f = 1 MHz 5 -50 7th -60 -70 0 5 10 15 20 25 30 35 40 45 50 Cds 3 2 Crss 0 0 10 20 30 40 1 0 Output Power (Watts-PEP) Supply Voltage (Volts) Gate-Source Voltage vs. Case Temperature 1.03 1.02 Voltage normalized to 1.0 V Series show current (A) Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 0.200 1.183 2.167 0.692 1.675 2.658 Case Temperature (C) 3 Crss -40 Cgs 4 PTF 102027 Impedance Data VDD = 26 V, POUT = 40 W, IDQ = 250 mA D e Z Source Z Load Z0 = 10 W G S Frequency MHz 925 930 940 950 960 R Z Source W jX 1.98 2.09 2.10 2.20 2.32 R 0.770 0.750 0.700 0.650 0.625 Z Load W jX 1.28 1.38 1.57 1.78 1.98 2.64 2.60 2.50 2.43 2.40 Test Circuit Test Circuit Schematic for f = 960 MHz DUT PTF 102027 0.169 l 960 MHz 0.020 l 960 MHz 0.079 l 960 MHz 0.158 l 960 MHz 0.016 l 960 MHz 0.095 l 960 MHz 0.150 l 960 MHz 0.047 l 960 MHz 0.118 l 960 MHz 0.254 l 960 MHz 0.315 l 960 MHz LDMOS Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 7.0 W Microstrip 7.0 W Microstrip 10 W Microstrip 10 W Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 85 W C1, C8 C2, C3, C9, C12 C6, C13 C4, C14 C5, C7 C10 C11 J1, J2 R1, R2, R3 PCB Capacitor, 0.1 F, 50V Digi-Key P4525-ND Capacitor, 36 pF 100B 360 Capacitor, 3.6 pF 100B 3R6 Capacitor, 3.3 pF 100B 3R3 Capacitor, 11 pF 100B 110 Capacitor, 100 F, 50 V Digi-Key P5182-ND Capacitor, 5.1 pF 100B 5R1 Connector, SMA, Female, Panel Mount Ericsson, #Rpm 513 412/53 Resistor, 220 ohm, 1/4W Digi-Key 220QBK-ND .031" Thick, 2 Oz Copper Both Sides AlliedSignal, G200 l 1, l 9 l2 l3 l4 l 5, l 6 l7 l8 l 10 l 11 l 12 l 13 4 e PTF 102027 Assembly Diagram (not to scale) ERICSSON ERICSSON 102027_A INPUT 10007_A INPUT 102027_A PUT 10007_A OUTOUTPUT Artwork (not to scale) 5 PTF 102027 Case Outline Specifications Package 20222 e Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 102027 Uen Rev. A 01-30-01 6 |
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