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| SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number SD210DE SD214DE V(BR)DS Min (V) 30 20 VGS(th) Max (V) 1.5 1.5 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V Crss Max (pF) 0.5 0.5 tON Max (ns) 2 2 Features D D D D D Ultra-High Speed Switching--tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode Benefits D D D D D High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Applications D D D D D Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode TO-206AF (TO-72) which results in lower gate leakage and " voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. For similar products see: quad array--SD5000/5400 series, and Zener protected--SD211DE/SST211 series. Body Substrate (Case) S 1 4 2 D Top View 3 G Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . "40 V Gate-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 V Drain Source Voltage Source Drain Voltage (SD210DE) . . . . . . . . . . . . . . . . . . . 30 V (SD214DE) . . . . . . . . . . . . . . . . . . . 20 V (SD210DE) . . . . . . . . . . . . . . . . . . . 10 V (SD214DE) . . . . . . . . . . . . . . . . . . . 20 V Source Substrate Voltage (SD210DE) . . . . . . . . . . . . . . . . . . . 15 V (SD214DE) . . . . . . . . . . . . . . . . . . . 25 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 125_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes: a. Derate 3 mW/_C above 25_C Drain Substrate Voltage (SD210DE) . . . . . . . . . . . . . . . . . . . 30 V (SD214DE) . . . . . . . . . . . . . . . . . . . 25 V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70294. Applications information may also be obtained via FaxBack, request document #70607. Siliconix S-51850--Rev. D, 14-Apr-97 1 SD210DE/214DE Specificationsa Limits SD210DE SD214DE Parameter Static Drain-Source Drain Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Substrate Breakdown Voltage Source-Substrate Breakdown Voltage Drain-Source Drain Source Leakage Symbolb Test Conditionsb Typc Min Max Min Max Unit V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO IDS( ff) DS(off) VGS = VBS = 0 V, ID = 10 mA VGS = VBS = -5 V, ID = 10 nA VGD = VBD = -5 V, IS = 10 nA VGB = 0 V, ID = 10 nA, Source Open VGB = 0 V, IS = 10 mA, Drain Open VGS = VBS = -5 V 5 VDS = 10 V VDS = 20 V VSD = 10 V VSD = 20 V 35 30 22 35 35 0.4 0.9 0.5 0.8 0.001 0.8 58 38 30 26 24 30 10 10 15 15 10 10 10 10 0.1 0.5 1.5 70 45 0.1 0.1 1.5 70 45 W V nA 20 20 V 25 25 Source-Drain Source Drain Leakage Gate Leakage Threshold Voltage ISD( ff) SD(off) IGBS VGS(th) VGD = VBD = -5 V 5 VDB = VSB = 0 V, VGB = "40 V VDS = VGS, ID = 1 mA, VSB = 0 V VGS = 5 V VGS = 10 V VSB = 0 V ID = 1 mA Drain-Source On-Resistance rDS(on) VGS = 15 V VGS = 20 V VGS = 25 V Dynamic Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance gfs gos C(GS+GD+GB) C(GD+DB) C(GS+SB) Crss VDS = 10 V, f = 1 MHz S VGS = VBS = -15 V VDS = 10 V, VS = 0 V, ID = 20 mA S SB f = 1 kHz 11 0.9 2.5 1.1 3.7 0.2 3.5 1.5 5.5 0.5 3.5 1.5 5.5 0.5 pF 10 10 mS Switching Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf Notes: a. TA = 25_C unless otherwise noted. b. B is is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. VSB = 0 V, VIN 0 to 5 V, RG = 25 W VDD = 5 V, RL = 680 W V 0.5 0.6 2 6 1 1 1 1 ns DMCBB 2 Siliconix S-51850--Rev. D, 14-Apr-97 SD210DE/214DE Typical Characteristics On-Resistance vs. Gate-Source Voltage 10 nA rDS(on) - Drain-Source On-Resistance ( W ) 300 VGS = 4 V Leakage 1 nA IS(off) 100 pA ISBO 10 pA 60 10 V IGSS (Diode) 0 0 4 8 12 16 20 VSB - Source-Body Voltage (V) 1 pA 0 4 8 12 Applied Voltage (V) 16 20 ID(off) ID (off) @ VGS = VBG = -5 V IS(off) @ VGD = VBD = -5V ISBO @ VGB = 0 V, Drain Open Leakage Current vs. Applied Voltage 240 180 120 5V On-Resistance vs. Temperature 100 rDS(on) - Drain-Source On-Resistance (W ) ID = 5 mA, VBS = 0 V g fs - Forward Transconductance (mS) 80 VGS = 5 V 60 10 V 15 V 40 20 V 20 20 Common-Source Forward Transconductance vs. Drain Current VDS = 15 V VBS = 0 V 16 TA = 55_C 25_C 12 8 125_C 4 0 -60 -20 20 60 100 140 TA - Temperature (_C) 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 tf - Fall Time (ns) 0 1 10 ID - Drain Current (mA) 100 Switching Characteristics V GS(th) - Gate-Source Threshold Voltage (V) 5 Threshold Voltage vs. Temperature VGS = VDS = VTH ID = 1 mA 4 3 R L (W) VBS = -10 V -5 V -1 V -0.5 V 2 1 0V 0 -60 -20 20 60 100 140 TA - Temperature (_C) Siliconix S-51850--Rev. D, 14-Apr-97 3 SD210DE/214DE Typical Characteristics (Cont'd) Threshold Voltage vs. Substrate-Source Voltage V GS(th) - Gate-Source Threshold Voltage (V) 5 VGS = VDS = VTH ID = 1 mA TA = 25_C Leakage (nA) 100 Leakage Current vs. Temperature ID(off) @ VGS = VBS = -5 V, VDS = 10 V IS(off) @ VGD = VBD = -5 V, VSD = 10 V IGSS @ VGS = 10 V ISBO @ VSB = 10 V Drain Open 4 IS(off) ID(off) 3 H 10 2 L 1 IGSS (Diode) ISBO 0 0 -4 -8 -12 -16 -20 VBS - Body-Source Voltage (V) 10 1 25 50 75 100 125 TA - Temperature (_C) 100 mA 10 mA 1 mA I B - Body Leakage 100 nA 10 nA 1 nA 1 mA 100 pA 10 pA 1 pA 20 0 4 8 12 16 20 VDB - Drain-Body Voltage (V) 100 Capacitance vs. Gate-Source Voltage VDS = 10 V, f = 1 MHz VGS = VBS Body Leakage Current vs. Drain-Body Voltage ID = 13 mA 8 Capacitance (pF) 6 C(GS+SB) C(GS+GD+GB) 2 C(GD+DB) 0 0 4 8 12 C(DG) 16 4 VGS - Gate-Source Voltage (V) Input Admittance 100 VDS = 10 V ID = 10 mA TA = 25_C 10 (mS) bis gis (mS) Forward Admittance VDS = 10 V ID = 10 mA TA = 25_C gfs 10 1 1 -bfs 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 4 Siliconix S-51850--Rev. D, 14-Apr-97 SD210DE/214DE Typical Characteristics Reverse Admittance 1 VDS = 10 V ID = 10 mA TA = 25_C brs 0.1 (mS) +grg 0.01 -grg (mS) 10 100 VDS = 10 V ID = 10 mA TA = 25_C Output Admittance bog 1 gog 0.001 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 50 Output Characteristics VBS = 0 V TA = 25_C g os - Output Conductance (mS) 1.0 Output Conductance vs. Drain Current VBS = 0 V f = 1 kHz 40 I D - Drain Current (mA) VGS = 5 V 0.8 VDS = 5 V 0.6 10 V 0.4 30 20 4V 10 3V 2V 0.2 15 V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) 0 0 4 8 12 16 20 ID - Drain Current (mA) Switching Time Test Circuit To Scope +VDD +5 V 510 W RL VIN VOUT To Scope Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz 0V td(on) +VDD VOUT 0V tr 50% 10% tf td(off) 50% VIN Sampling Scope 51 W tr < 360 ps RIN = 1 MW CIN = 2 pF BW = 500 MHz 90% Siliconix S-51850--Rev. D, 14-Apr-97 5 |
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