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| Datasheet File OCR Text: |
| NPN TRANSISTOR 100mA C945 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS] Ta=25J^ CONDITION Ic=1mA Ic=5uA Ie=50g A Vcb=60V Veb=5V Ic=100mA, Ib=10mA Vce=6.0V,Ic=1.0mA Vce=6V, Ie=10mA Vcb=10V,Ie=0,f=1MHz PARAMETERS SYMBOL MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVceo 50 V Collector-Base Breakdown Voltage BVcbo 60 V Emitter-Base Breakdown Voltage BVebo 5 V Collector-Base Leakage Icbo 0.1 uA Emitter-Base Leakage Iebo 0.1 uA Collector-Emitter Saturation Voltage Vce] sat ^ 0.18 0.3 V DC Current Gain Hfe 90 200 600 Collector Current Ic 100 mA Current Gain Bandwidth fT 100 180 MHz Output Capacitance Cob 4.5 6.0 pF Power Dissipation Pc 0.25 W Junction Temperature Tj 125 J Storage Temperature Tstg -55 125 J Classification of Hfe Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 |
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