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| SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 FEBRUARY 1996 7 FEATURES * 25 Volt VCEO * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). COMPLEMENTARY TYPE PARTMARKING DETAIL FZT655 FZT755 FZT755 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 50 20 30 20 -150 -150 -5 -0.1 -0.1 -0.5 -0.5 -1.1 -1.0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -150 -150 -5 -2 -1 2 -55 to +150 UNIT V V V A A UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-125V VEB=-3V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* MHz pF IC=-10mA, VCE=-20V f=20MHz VCB=-10V f=1MHz V V V V 300 *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% 3 - 238 FZT755 TYPICAL CHARACTERISTICS td tr ts tf s ts 2.0 0.5 IB1=IB2=IC/10 VCE=10V 0.8 s - (Volts) 0.6 IC/IB=10 0.4 td 0.4 Switching time 0.3 1.0 0.2 tr tf V 0.2 0.1 0 0 0.001 0.01 0.1 1 0.01 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 - Normalised Gain (%) 1.0 80 0.8 IC/IB=10 60 - (Volts) V VCE=5V 0.6 40 20 0.4 h 0.001 0.01 0.1 1 10 0.2 0.001 0.01 0.1 1 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC 10 1.2 VCE=5V VBE(sat) v IC Single Pulse T est at Tamb=25C - (Volts) 1.0 1 0.8 0.1 0.6 DC 100ms 10ms 1ms 300s V 0.4 0.0001 0.001 0.01 0.1 1 0.01 0.1 1 10 100 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 239 |
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