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| SEMICONDUCTOR TECHNICAL DATA DC/DC CONVERTER APPLICATIONS. FEATURES Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. The KTX511T consists of two chips which are equivalent to the KTX511T EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE E K 1 B K 6 Ultrasmall-sized package permiting applied sets to be made small and slim (mounting height 0.7 ). A F KTA1532T and the KDR701S, respectively. 2 5 DIM A B C D E D F G H I J K L 3 4 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 EQUIVALENT CIRCUIT (TOP VIEW) C J I 6 5 4 Marking 6 5 4 L G G J H Lot No. Q1 D1 Type Name DA 1 2 3 1. Q 1 EMITTER 2. Q 1 BASE 3. D 1 ANODE 4. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 5. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 6. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 1 2 3 TS6 MAXIMUM RATING (Ta=25 Transistor Q1 ) SYMBOL VCBO VCEO VEBO DC Pulse IC ICP IB PC * Tj Tstg 0.8 ) RATING -20 -20 -5 -1.5 -3 -300 0.9 150 -55 150 UNIT V V V A A mA W CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 Diode (SBD) D1 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge Current Junction Temperature Storage Temperature Range SYMBOL VRRM VR IO IFSM Tj Tstg RATING 30 30 0.7 5 125 -55 150 UNIT V V A A 2002. 1. 24 Revision No : 1 1/5 KTX511T ELECTRICAL CHARACTERISTICS (Ta=25 ) Transistor Q1 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-12V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-750mA, IB=-15mA IC=-1.5A, IB=-30mA IC=-750mA, IB=-15mA VCE=-2V, IC=-100mA VCE=-2V, IC=-300mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 220F 470F VCC =-5V RL MIN. 20 20 -5 200 - TYP. -120 -210 -0.85 210 30 50 MAX. -0.1 -0.1 -180 -320 -1.2 560 - UNIT A A V V V mV mV V MHz pF OUTPUT Storage Time tstg - 90 - nS Fall Time tf V BE =5V -20IB1=20IB2=IC =-750mA - 15 - Diode (SBD) D1 CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recover Time SYMBOL VR VF IR CT trr IR=1mA IF=0.7A VR=30V VR=0V, f=1MHz IF=IR=100mA 190 7.5 TEST CONDITION MIN. 30 TYP. MAX. 0.55 80 UNIT V V A pF ns 2002. 1. 24 Revision No : 1 2/5 KTX511T Q 1 (PNP TRANSISTOR) I C - V CE mA h FE - I C -20mA -2.0 COLLECTOR CURRENT I C (A) -50m mA 1K DC CURRENT GAIN h FE 500 300 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -30 -40 -1.8 V =-2V CE A -10mA -8mA -6mA -4mA -2mA IB=0mA Ta=7 Ta=2 Ta=-2 5C 5C 5C 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -500 -300 I C /I B =20 VCE(sat) - I C -1K -500 -300 I C /I B =50 -100 -50 -30 = Ta 75 C -100 -50 -30 Ta= C 75 C 25 Ta= 5 C 2 Ta= CC -25 5 a= Ta=2 T -10 -5 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COLLECTOR CURRENT IC (A) I C /I B =50 I C - V BE -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VCE =-2V Ta=75 C Ta=25 C Ta=-25 C -1 -0.5 -0.3 Ta=-25 C Ta=75 C Ta=25 C -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2002. 1. 24 Revision No : 1 3/5 KTX511T f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =-2V C ob - V CB 100 50 30 f=1MHz 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 10 5 3 -1 -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -5 -3 COLLECTOR CURRENT I C (A) -1 -0.5 -0.3 COLLECTOR POWER DISSIPATION PC (W) I C MAX.(PULSED) 10 Pc - Ta 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) S 0 I C MAX (CONTINUOUS) DC 50 * 10 OP 1m m S* S 0 * S* 10 ER AT IO 0m S* N -0.1 -0.05 -0.03 -0.01 -0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) -0.3 -1 -3 -10 -30 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V) D 1 (SBD) I R - VR 50 REVERSE CURRENT I R (A) 30 FORWARD CURRENT I F (mA) Ta=25 C I F - VF 10 10 10 1 0.1 0.01 0.001 3 Ta=25 C 2 10 5 3 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 0 100 200 300 400 500 FORWARD VOLTAGE V F (V) 2002. 1. 24 Revision No : 1 4/5 KTX511T I R - Ta 10 REVERSE CURRENT I R (A) 4 VF - Ta 0.8 FORWARD VOLTAGE VF (V) I F =700mA Ta=25 C 3 0.7 0.6 0.5 0.4 0.3 0.2 10 10 2 10 1 -40 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) -40 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) CT - V R TERMINAL CAPACITANCE C T (pF) 200 180 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2002. 1. 24 Revision No : 1 5/5 |
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