Part Number Hot Search : 
NTE7018 DG333ADJ 11N80C3 SC458 Z5233 DTD723YM 16237 1SV287
Product Description
Full Text Search
 

To Download PMB2313T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 ICs for Communication
Prescaler Circuit 1.1 GHz PMB 2313T V1.5
Data Sheet 7.96
30% 7 5HYLVLRQ +LVWRU\ Previous Releases: Page none Subjects (changes since last revision)
'DWD &ODVVLILFDWLRQ 0D[LPXP 5DWLQJV Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. &KDUDFWHULVWLFV The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 C and the given supply voltage. 2SHUDWLQJ 5DQJH In the operating range the functions given in the circuit description are fullfilled. For detailed technical information about "Processing Guidelines" and "Quality Assurance" for ICs, see our Product Overview "ICs for Communications"
(GLWLRQ This edition was realized using the software system FrameMaker(R). 3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ.RPPXQLNDWLRQ %DODQVWUDH ' 0QFKHQ (c) Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide. (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
3UHVFDOHU &LUFXLW *+]
30% 7
Preliminary Data )XQFWLRQDO 'HVFULSWLRQ $SSOLFDWLRQ
The IC is designed for use in mobile radio communication devices up to 1100 MHz. Due to its low power consumption and low phase noise generation it is suitable for the use in battery powered handheld systems, e.g. GSM, cordless telephone and wireless LANs. Low supply voltage down to 2.7V. It can be switched to a low-power standby mode.
Bipolar IC
Vignette
3'62
Internal current source at the emitter follower output. No external resistor needed in typical applications. The divide ratio is 1:64/65 or 1:128/129 depending on the external circuit configuration. The IC is board level compatible to the PMB 2312 prescaler.
Semiconductor Group
3
7.96
30% 7
&LUFXLW 'HVFULSWLRQ
The differential inputs of the IC may be connected either balanced or single ended. In the latter case the unused input must be RF-grounded with a capacitor (about 1.5 nF) with a low serial inductance. Depending on the logic level at SW input the basic divide ratio of the ECL-stages is fixed to 1:64/65 or 1:128/129. The MOD input determines whether modulus 1:n or 1:n+1 (n=64 or 128 according to SW-level) is active. The IC can be switched to a low-power standby mode (input STB). The MOD input is TTL/CMOS compatible. The emitter follower output is CMOS compatible according to the application circuit on page 11. The minimum logic swing is 0.8 Vpp.
)XQFWLRQ WDEOH
,QSXW SLQ
/RJLF OHYHO HIGH = US-0.1 V to US LOW = GND to 0.8 V or open HIGH = 2.0 V to US or open LOW = GND to 0.8 V HIGH = US-0.1 V to US LOW = GND to 0.8 V
3UHVFDOHU IXQFWLRQ
1:64/65 1:128/129 1:64/1:128 1:65/1:129 Divider Q=HIGH, STANDBY-mode
6: 02' 67%
Semiconductor Group
4
7.96
30% 7
3LQ $VVLJQPHQW
I1 US SW Q
1 2 3 4
8 7 6 5
I2 STB MOD GND
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Pin 7 Pin 8
RF-input I1 supply voltage US divide ratio 1:64/65 - 1:128/129 control input (SW) output Q GND modulus 1:n/n+1 (n=64 or 128) control input (MOD) standby mode control input (STB) RF-input I2
Semiconductor Group
5
7.96
30% 7
US STB 7 Uref 2
I2
8 1:64/65 1:128/129
4
Q
I1
1 I
SW
3 5 GND
6
MOD
%ORFN 'LDJUDP
Semiconductor Group
6
7.96
30% 7
$EVROXWH 0D[LPXP 5DWLQJV 7A = -40 to 85 C 3DUDPHWHU Supply voltage Input level (Pin 1; Pin 8) Voltage swing (Pin 1 to 8) Input level (Pin 3; Pin 6; Pin 7) 6\PERO 8S 8I 8I18 8SW, 8MOD, 8STB, 8Q ,Q 7j 7S 5thsa -65 -2 -0.3 -0.3 /LPLW 9DOXHV PLQ PD[ 6 2 2 V V V 8S=2.7...5.5V 8S=0V 8QLW 5HPDUNV
8S+0.7V V or 5.5V if 8S+0.7V > 5.5V 8S 5 125 125 185 V mA C C K/W
Output level (Pin 4) Output current (Pin 4) Junction temperature Storage temperature Thermal resistance system-ambient
The maximum ratings may not be exceeded under any circumstances, not even momentarily and individually, as permanent damage to the IC will result.
(6'LQWHJULW\ DFFRUGLQJ 0,/67' ' 0HWK 9
2SHUDWLQJ 5DQJH 3DUDPHWHU Supply Voltage Input frequency Ambient temperature 6\PERO /LPLW 9DOXHV PLQ 8S 7A 2.7 50 -40 max. 5.5 1400 85 V MHz C 8QLW 5HPDUNV
Within the operational range the IC operates as described in the circuit description. The AC / DC characteristic limits are not guaranteed.
Semiconductor Group
7
7.96
30% 7
$&'& &KDUDFWHULVWLFV 7$ WR &
3DUDPHWHU 6\PERO PLQ /LPLW 9DOXHV W\S PD[ 8QLW 7HVW &RQGLWLRQ
6XSSO\ YROWDJH 8S=2.7 to 5.5V $PELHQW WHPSHUDWXUH 7A = -20 to 85 C (refered to the test circuit)
Supply current ,S ,S ,S ,STB 8in 3in 8in 3in 8Q 8Q 8SWH 8SWL ,SWH ,SWL 8MODH 8MODL ,MODH 120 ,MODL 2.3 GND 25 -19 25 -19 1.1 1 1.1 0.8 8S-0.1V GND 1.9 2.4 mA inputs RF-grounded, 8S=2.7, 7A = 25 C, STB= 8S output open inputs RF-grounded, 8S=4.0, 7A = 25 C, STB= 8S output open inputs RF-grounded, 8S=5.5, 7A = 25 C, STB= 8S output open inputs RF-grounded, output open, STB = GND 100-1000MHz (sine wave) 100-1000MHz (sine wave) 1000-1100MHz (sine wave) 1000-1100MHz (sine wave)
1.95
2.45
mA
2.00
2.5
mA
Supply current in standby-mode Input level dynamicrange (see diagram 2) Output logic swing SW voltage High SW voltage Low SW input current High SW input current Low MOD voltage High MOD voltage Low MOD input current High MOD input current Low
0.1 400 5 280 2
mA mVrms
dBm
mVrms
8S 0.8 60 30 8S 0.8 50
dBm VPP VPP
V V A A V V A A
&L <= 12pF, 5L=2k &L <= 8pF SW=8S
SW=GND
MOD=8S MOD=GND
AC /DC characteristics involve the spread of values guaranteed within the specified suply voltage and ambient temperature range. Typical characteristics are the median of the production.
Semiconductor Group
8
7.96
30% 7
$&'& &KDUDFWHULVWLFV 7$ WR &
3DUDPHWHU 6\PERO PLQ STB voltage High STB voltage Low STB input current High STB input current Low Internal current source (see block diagram) 8STBH 8STBL ,STBH ,STBL , 400 8S-0.1 GND /LPLW 9DOXHV W\S PD[ 8S 0.8 30 60 V V A A A 8QLW 7HVW &RQGLWLRQ
STB = 8S STB = GND
'HOD\ WLPHV MOD setup time Wset (diagram 1) 29 ns
AC /DC characteristics involve the spread of values guaranteed within the specified suply voltage and ambient temperature range. Typical characteristics are the median of the production.
Semiconductor Group
9
7.96
30% 7
7HVW FLUFXLW
Calibration of the signal generator
Signal generator (50)
6dB attenuator (50)
Power meter
50
attenuator directly connected to power meter
Input sensitivity and output logic swing measurement
spectrum analyser GND US UMOD 6 7 8 1n UI2 UQ USW US US UI
1n
5
4
Frequency counter
30%
3 2 1
Scope RL Cload
Signal generator (50)
6dB attenuator (50)
USTB
1n
attenuator directly connected to power meter
Cload <= 8pF inc. jig and instrument input capacitance RL only needed for enhanced driving capability.
Semiconductor Group
10
7.96
30% 7
$SSOLFDWLRQ &LUFXLW
MOD
&0263//
GND 5 MOD STB 7 I2 8 6 4 Q SW US I1 ca. 1nF F TBB 206 PMB 2306 PD
30%
3 2 1
US
1nF
1n LF
VCO
(SW connected for 1:64/65 divider ratio)
Semiconductor Group
11
7.96
30% 7
'HILQLWLRQ RI 0RGXOXV 6HWXS 7LPH
I
MOD
Q
Changes of the mod-level made up to this time will still affect the Q-output
'LDJUDP
Semiconductor Group
12
Wset
7.96
30% 7
'LDJUDP
,QSXW '\QDPLF 5DQJH 7HVW &RQILJXUDWLRQ
C3 VCC I2 SW STB VCC
C1 6 dB Attenuator 50 Ohm max. +13dBm C2 I1
stand by
Q MOD C1 = C2 = 1nF C3 = 10 pF || 22nF CL < 8pF GND CL modulus control input
30% '\QDPLF 5DQJH 9 5DWLR 7HVW &RQILJXUDWLRQ Pin / [ dBm ] 10 Max. power of signal source
0
-10
operating window
-20
-30
-40
-50 0 200 400 600 800 1000 f / [ MHz ]
13
1200
1400
1600
1800
Semiconductor Group
7.96
30% 7
'LDJUDP ,QSXW '\QDPLF 5DQJH 7HVW &RQILJXUDWLRQ
C3 VCC I2 50 Ohm 50 Ohm max. +13dBm C2 I1 Q MOD GND CL modulus control input SW STB VCC
C1
stand by
C1 = C2 = 1nF C3 = 10pF || 22nF CL < 8pF
30% '\QDPLF 5DQJH 9 5DWLR 7HVW &RQILJXUDWLRQ 20 Max. output power of signal source Pin / [ dBm ] 10
0
-10
operating window
-20
-30
-40
-50 0 200 400 600 800 1000 f / [ MHz ]
14
1200
1400
1600
1800
Semiconductor Group
7.96
30% 7
3KDVH 1RLVH 0HDVXUHPHQW 7HVW 6HWXS
+4.0V
PMB 2306 GSM Application Board with PMB 2313
RF
Spectrum Analyser Rhode & Schwarz FSBS
Plotter
REF 3 wire bus
10MHz Ref Out
serial port
MAC Board
3&
PMB 2306 register programming: N = 70, A = 20 (fout = 900.0 MHz) R = 50 (fref = 200 kHz) Status =11111100011111
IPD=2mA Port 1=high Dual Mode Preamplifier Select= MOD A AAnti-Bachlash Width=1.3ns Standby 1/2=active PD-polarity=positive Mode 1/2=internal charge pump Data Acquisition=synchronous
0HDVXUHG 6SHFWUXP
Semiconductor Group
15
7.96
30% 7
30% *60 $SSOLFDWLRQ %RDUG
C19 22 F
C20 22 pF
R7 100
R9 8.2 k
C16 22 pF R13 150
L1 22 nH C15 22 pF T3
X2 SMA RF
C12 22 pF
R6 220
R8 330
R10 3.3 k
T1 BFT 92 R4 18 k C8 10 pF C11 1.2 pF
C13
R11 8.2 k
C14 22 pF
BFR 280
T2 BFR 280
2.2 pF C10 22 pF RX 1.36 GHz
C9 100 pF
D1 BBY 51
R15 2.2 k R12 6.8 k
R14 150
R5 8.2 k
C7 5.6 nF
R3 8.2 k
C5 560 pF R2 22 k R1 39 k
* RA 4.7 k
C17 33 pF C1 33 pF
C3 330 pF
LD MFO2MFO1 VDD1 PD
VSS1
FI
Q
SW
VS
I1
IC 1 PMB 2306
RI C4 1 nF VSS EN DA CLK VDD MOD
IC2 PMB 2313
GND MOD STB I2
C2 33 pF C4 100 nF X1 SMA REF EN DA CLK R*) Only needed when using the PMB 2312 prescaler. A
&LUFXLW 'LDJUDP
Semiconductor Group
16
7.96
30% 7
30% *60 $SSOLFDWLRQ %RDUG /LVW RI &RPSRQHQWV
,WHP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 4XDQWLW\ 1 2 1 1 1 1 1 1 4 1 1 1 1 1 1 1 6 3 1 1 1 1 1 1 1 1 2 1 2 1 1 1 5HIHUHQFH R7 R13, R14 R6 R8 R15 R10 RA R12 R3, R5, R9, R11 R4 R2 R1 L1 C11 C13 C8 C10, C12, C14 C15, C16, C30 C1, C2, C17 C9 C3 C5 C4 C7 C6 C19 D1 T2, T3 T1 X1, X2 RX IC1 or IC2 or 100 150 220 330 2.2k 3.3k 4.7k 6.8k 8.2k 18k 22k 39k 22nH 1.2pF 2.2pF 10pF 22pF 33pF 100pF 330pF 560pF 1.0nF 5.6nF 100nF 22F BBY51 BFR280 BFT92 SMA 1.3GHz PMB 2306T P-DSO-14 PMB 2306T P-DSO-14 PMB 2313T P-DSO-8-1 PMB 2313T P-DSO-8-1 3DUW SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 SMD/0805 B54102-A1101-X60 B54102-A1151-J60 B54102-A1221-J60 B54102-A1331-J60 B54102-A1222-J60 B54102-A1332-J60 B54102-A1472-J60 B54102-A1682-J60 B54102-A1822-J60 B54102-A1183-J60 B54102-A1223-J60 B54102-A1393-J60
SIMID 01 B82412-A3220-M COG/0805 B37940-K5010-C262 COG/0805 B37940-K5020-C262 COG/0805 B37940-K5100-J62 COG/0805 COG/0805 COG/0805 COG/0805 COG/0805 B37940-K5220-J62 B37940-K5330-J62 B37940-K5101-J62 B37940-K5331-J62 B37940-K5561-J62
COG/1210 X7R/1210 B37950-K5104-K62
Q62702-B631 Q62702-F1298 Q62702-F1062 Connector B69620-G1307-A410 Q67100-H6423 (TUBE) Q67106-H6423 (T+R) Q ?? (TUBE) Q 67006-A6116 (T+R)
Semiconductor Group
17
7.96
30% 7
5HSODFLQJ WKH 30% E\ WKH 30% 30%
Supply current (typ.): 5.7mA 30% 1.95 mA 7HVW &RQGLWLRQ inputs RF-grounded, 8S = 4.0 V, 7amb = 25 C
STB open, output open
Input frequency 200 - 1000 MHz Supply voltage 4.0 - 5.5V Output stage load: internal load resistor Phase noise: Input impedance (typ.): 100 - 1100 MHz 2.7 - 5.5 V internal current source
same performance, see section "Phase Noise Measurement" 40 || 1.3 pF 66 || 1.4 pF 750 || 560 fF 1150 || 350 fF I = 900 MHz, C1= C2 = 1 nF 8S = 4.0 V, 7amb = 25 C I = 450 MHz, C1= C2= 1 nF 8S = 4.0 V, 7amb = 25 C
Input sensitivity:
see following diagram
Due to the internal output current source of the PMB 2313, an external load resistor may be omitted in most cases. Input Sensitivity of PMB 2313 versus PMB 2312 Measurement according to Test Configuration 1
PMB 2313 vers. PMB 2312 Dynamic Range 4V Ratio 65 Test Circuit 1 10 0 -10 Pin / [ dBm ] -20 -30 -40 -50 0 200 400 600 800 1000 f / [ MHz ] 1200 1400 1600 1800 Max. output power of signal source 2313 2312
PMB 2313 operating window
Semiconductor Group
18
7.96
30% 7
3DFNDJH 2XWOLQHV 3ODVWLF3DFNDJH 3'62
5,2 max 5 1,45-0,2 4 -0,2 0,7 0,19+0,06 60,2 1,75 max 7.96
0,35+0,15 1,27 3,81
0,7 max
(Dual-in-Line-Package, Small-Outline) 20 A 8 DIN 41870 T16 (SMD)
Semiconductor Group
19


▲Up To Search▲   

 
Price & Availability of PMB2313T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X