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RUR1S1560S
Data Sheet September 2002
15A, 600V Ultrafast Diode [ /Title (HUF7 6013P 3, HUF76 013D3 S) /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOSThe RUR1S1560S is an ultrafast diode (trr < 55ns) with soft recovery characteristics. It has low forward voltage drop and is of silicon nitride passivated ion-implanted, epitaxial planar construction. This device is intended for use as freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast soft recovery minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA9905.
Features
* Ultrafast Recovery . . . . . . . . . . . . . . . . . . . . . . . . trr < 55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RUR1S1560S PACKAGE TO-263 BRAND RUR1560
Packaging
JEDEC TO-263
CATHODE (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A.
CATHODE
Symbol
K
ANODE
A
Absolute Maximum Ratings
SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL Tpkg RJC RJA NOTES:
TC = 25oC, Unless Otherwise Specified PARAMETER RUR1S1560S 600 600 600 15 30 200 100 20 -55 to 175 300 260 1.5 60 UNITS V V V A A A W mJ
oC oC oC oC/W oC/W
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
THERMAL SPECIFICATIONS
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
(c)2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
RUR1S1560S
Electrical Specifications
SYMBOL VF IF = 15A
TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 20 30 15 17 MAX 1.5 1.2 100 500 55 60 UNITS V V A A ns ns ns ns ns ns
IF = 15A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 15A, dIF/dt = 100A/s, VR = 30V ta IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 15A, dIF/dt = 100A/s, VR = 30V tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 15A, dIF/dt = 100A/s, VR = 30V DEFINITIONS
VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). pw = pulse width. D = duty cycle.
(c)2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
RUR1S1560S Typical Performance Curves
100.0 200 100 TJ = 150oC IF, FORWARD CURRENT (A) IR , REVERSE CURRENT (A) 10.0 TJ = 150oC 10
1
TJ = 100oC
1.0
TJ = 100oC TJ = 25oC
0.1
0.10
0.010 TJ = 25oC 0.001
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
500
600
VF, FORWARD VOLTAGE DROP (V)
VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC
80 70
t, RECOVERY TIMES (ns)
FIGURE 2. REVERSE VOLTAGE vs REVERSE CURRENT CHARACTERISTIC
16 IF(AVG) , AVERAGE CURRENT (A) 14 12 10 SQUARE WAVE 8 6 4 2 0 140 145 150 155 160 165 170 175 180 TC , CASE TEMPERATURE (oC) DC
60 50 40 trr 30 20 10 0 1 ta tb 10 IF, FORWARD CURRENT (A) 100
FIGURE 3. 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT
FIGURE 4. 6. TYPICAL CURRENT DERATING CURVE vs CASE TEMPERATURE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
MOS IRF840
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
(c)2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
RUR1S1560S Test Circuits and Waveforms
I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IL IV IL VAVL
(Continued)
-
t0
t1
t2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
(c)2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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