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July 2001
AO6400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 30V ID = 6.9 A RDS(ON) < 28m (VGS = 10V) RDS(ON) < 33m (VGS = 4.5V) RDS(ON) < 52m (VGS = 2.5V)
TSOP-6 Top View D D G 16 25 34 D D S
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 12 Continuous Drain TA=25C 6.9 A Current TA=70C 5.8 ID Pulsed Drain Current B TA=25C A Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C IDM PD TJ, TSTG 35 2 1.44 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 47.5 74 37
Max 62.5 110 50
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6400
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C 0.7 35 1.1 22.3 31.5 26.8 42.8 15 0.71 Min 30 1 5 100 1.4 28 39 33 52 1 3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
VGS=4.5V, ID=6A VGS=2.5V, ID=5A VDS=5V, ID=5A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
10
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Gate resistance Rg SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
823 99 77 1.2 9.6 1.65 3 5.5 5.1 37 4.2 16 8.9
VGS=4.5V, VDS=15V, ID=5.8A
VGS=10V, VDS=15V, RL=2.7, RGEN=6 IF=5A, dI/dt=100A/s IF=5A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO6400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 4.5V 15 ID (A) 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region characteristics 60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=2.5V Normalized On-Resistance 1.8 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V VGS=2.5V VGS=2V 2.5V ID(A) 12 20 10V 3V 16 VDS=5V
8 125C 4 25C
0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V
VGS=10V
70 60 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=5A IS (A)
1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C
Alpha and Omega Semiconductor, Ltd.
RDS(ON) (m)
AO6400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=15V ID=6.9A Capacitance (pF) 1400 1200 1000 800 600 400 Coss Crss Ciss
100.0 TJ(Max)=150C TA=25C 100s 1ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms Power (W)
40 TJ(Max)=150C TA=25C 30
10.0 ID (Amps)
RDS(ON) limited
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/(Ton+Toff ) TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
Toff
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
A A1 A2 b c D E E1 e e1 L 1
MIN 1.00 0.00 1.00 0.35 0.10 2.70 2.60 1.60
0.37 1
NOM --- --- 1.10 0.40 0.13 2.90 2.80 1.80 0.95 BSC 1.90 BSC --- 5
MAX 1.25 0.10 1.15 0.50 0.20 3.10 3.00 2.00 --- 8
PACKAGE MARKING DESCRIPTION
SEATING PLANE
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
GAUGE PLANE
RECOMMENDED LAND PATTERN
TSOP-6 PART NO. CODE
PART NO. AO6400 AO6401
CODE D0 D1
NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Tape and Reel Data
TSOP-6 Reel
TSOP-6 Tape
Leader / Trailer & Orientation

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