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| PC367 PC367 s Features 1. Low input current type (IF=0.5mA) 2. High resistance to noise due to high common mode rejection voltage (CMR:MIN. 10kV/s) 3. Mini-flat package 4. Isolation voltage (Viso:3 750Vrms) 5. Recognized by UL, file No. 64380 Low Input Current Type Photocoupler s Outline Dimensions 3.60.3 2.540.25 4 3 (Unit : mm) s Applications 1. Programmable controllers 2. Facsimiles 3. Telephones 1 367 2 s Rank Table Model No. PC367NT PC367N1T PC367N2T Rank mark A, B or no mark A B Ic (mA) 0.5 to 2.5 0.75 to 1.5 1.0 to 2.0 Conditions IF=0.5mA VCE=5V Ta=25C (Ta=25C) Unit mA mA V mW V V mA mW mW C C kVrms C Anode mark Epoxy resin 0.40.1 5.30.3 45 0.10.1 2.60.2 0.20.05 4.40.2 6 +0.2 7.0-0.7 +0.4 0.5-0.2 s Absolute Maximum Ratings Parameter Symbol Rating 10 Forward current IF *1 Peak forward current 200 IFM Input 6 Reverse voltage VR Power dissipation P 15 Collector-emitter voltage VCEO 70 Emitter-collector voltage VECO 6 Output 50 IC Collector current PC 150 Collector power dissipation 170 Total power dissipation Ptot Operating temperature -30 to +100 Topr -40 to +125 Tstg Storage temperature *2 Viso Isolation voltage 3.75 *3 260 Soldering temperature Tsol *1 Pulse width<=100s, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10 seconds Internal connection diagram 1 4 1 2 3 4 2 3 Anode Cathode Emitter Collector 0.2mm or more Soldering area Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ PC367 s Electro-optical Characteristics Parameter Symbol Forward voltage VF Reverse current IR Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time tf Fall time *4 (Ta=25C) Conditions IF=10mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=0.5mA, VCE=5V IF=10mA, IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V, IC=2mA, RL=100 MIN. - - - - 70 6 0.5 - 5x1010 - - - 10 TYP. 1.2 - 30 - - - - - 1x1011 0.6 4 3 - MAX. 1.4 10 250 100 - - 2.5 0.2 - 1.0 18 18 - Unit V A pF nA V V mA V pF s s kV/s Transfer characteristics Output Input Common mode rejection voltage CMR Ta=25C, RL=470, VCM=1.5kV (peak), IF=0mA, VCC=9V, Vnp=100mV *4 Refer to Fig.1 Fig.1 Test Circuit for Common Mode Rejection Voltage (dV/dt) VCC RL VO VCM : High wave pulse RL=470 VCC=9V VCM 1) Vcp VO Vnp VCM (Vcp Nearly = dV/dtxCfxRL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.2 Forward Current vs. Ambient Temperature Fig.3 Diode Power Dissipation vs. Ambient Temperature 10 Diode power dissipation P (mW) 0 25 50 75 100 125 15 Forward current IF (mA) 10 5 5 0 -30 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) PC367 Fig.4 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation PC (mW) Fig.5 Total Power Dissipation vs. Ambient Temperature Total power dissipation Ptot (mW) 200 200 170 150 150 100 100 50 50 0 -30 0 25 50 75 100 125 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig.6 Peak Forward Current vs. Duty Ratio 2000 Peak forward current IFM (mA) 1000 500 Pulse width <=100s Ta=25C Fig.7 Forward Current vs. Forward Voltage 100 Forward current IF (mA) 10 Ta=25C Ta=100C 1 Ta=75C Ta=50C Ta=0C Ta=-25C 200 100 50 20 10 5 10 -3 2 5 10 -2 2 5 10 -1 0.1 2 5 1 0 0.5 1.0 1.5 2.0 Duty ratio Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current 700 600 Current transfer ratio CTR (%) 500 400 300 200 100 0 0.1 VCE=5V Ta=25C Fig.9 Collector Current vs. Collector-emitter Voltage 30 IF=7mA 25 Collector current IC (mA) IF=5mA 20 IF=3mA PC (MAX.) Ta=25C 15 IF=2mA 10 IF=1mA IF=0.5mA 0 5 1 Forward current IF (mA) 10 0 2 4 6 8 10 Collector-emitter voltage VCE (V) PC367 Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 160 140 Relative current transfer ratio (%) 120 100 80 60 40 20 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) VCE=5V IF=0.5mA Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) IF=10mA IC=1mA Fig.12 Collector Dark Current vs. Ambient Temperature 10-5 10-6 VCE=50V Fig.13 Response Time vs. Load Resistance 1000 VCE=2V IC=2mA Ta=25C 100 Response time (s) tf td Collector dark current ICEO (A) 10-7 10-8 10-9 10-10 10-11 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (C) 10 tr 1 ts 0.1 0.1 1 Load resistance RL (k) 10 Fig.14 Response Time vs. Load Resistance (Saturation) 1000 VCC=5V IF=16mA Ta=25C 100 Response time (s) ts 10 tf Fig.15 Test Circuit for Response Time VCC RD Input RL Output Input Output 10% 90% td tr td ts tf 1 tr 0.1 1 10 Load resistance RL (k) 100 PC367 Fig.16 Voltage Gain vs Frequency 5 Collector-emitter saturation voltage VCE (sat) (V) VCE=2V IC=2mA Ta=25C Fig.17 Collector-emitter Saturation Voltage vs. Forward Current 5 IC=7mA 4 IC=5mA IC=3mA IC=2mA 3 IC=1mA IC=0.5mA 2 Ta=25C 0 Voltage gain AV (dB) -5 -10 RL=10k 1k 100 -15 -20 -25 0.1 1 1 10 Frequency f (kHz) 100 1000 0 0 2 4 6 8 10 Forward current IF (mA) Fig.18 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 230C 200C 180C 25C 30s 1min 2 min 1.5 min 1min |
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