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SI6923DQ
April 2001
SI6923DQ
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.
Features
* -3.5 A, -20 V. RDS(ON) = 0.045 @ VGS = -4.5 V RDS(ON) = 0.075 @ VGS = -2.5 V * VF < 0.55 V @ 1 A * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* DC/DC conversion
A A A C G S S D
5 6 7 8
4 3 2 1
TSSOP-8
Pin 1
MOSFET Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
(Note 1)
Ratings -20
12
Units
V V A
PD TJ, TSTG
- Pulsed MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1) Operating and Storage Junction Temperature Range
-3.5 -30
1.2 1.0 -55 to +150
W C
Schottky Maximum Ratings
VRRM IF IFM Repetitive Peak Reverse Voltage Average Forward Current Peak Forward Current 20 1.5 30 V A A
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (minimum pad)
(Note 1)
MOSFET: 115 Schottky: 130
C/W
Package Marking and Ordering Information
Device Marking 6923 Device SI6923DQ Reel Size 13'' Tape width 16mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
SI6923DQ Rev. A(W)
SI6923DQ
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A, Referenced to25C VDS = -16 V, VGS = -12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-16 -1 -100 100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to25C VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -2.7 A VGS=-4.5 V, ID =-3.5A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -3.5A
-0.6
-1.0 3 36 56 49
-1.5
V mV/C
45 75 72
m
ID(on) gFS
-15 13.2
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, f = 1.0 MHz
V GS = 0 V,
1015 446 118
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD IGSSR Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -5 V, VGS = -4.5 V,
ID = -1 A, RGEN = 6
11 18 34 34
20 32 55 55 16
ns ns ns ns nC nC nC
VDS = -5V, VGS = -4.5 V
ID = -3.5 A,
9.7 2.2 2.4
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Gate-Body Leakage, Reverse VGS = 0 V, VGS = 12 V, IS = -1.25 A VDS = 0 V
(Note 2)
-1.25 -0.6 -1.2 100
A V nA
Schottky Diode Characteristics
IR VF CT Reverse Leakage Forward Voltage Junction Capacitance VR = 20V IF = 1A VR = 10V TJ=25C TJ=125C TJ=25C TJ=125C 0.6 1 0.48 0.42 50 50 8 0.55 0.50 A mA V V pF
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA is 115 C/W for the MOSFET and 130C/W for the Schottky Diode when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
SI6923DQ Rev. A (W)
SI6923DQ
Typical Characteristics
30 VGS = -4.5V 24 -4.0V -3.5V -3.0V
1.6
VGS = -2.5V 1.4
18 -2.5V 12 1 1.2 -3.0V -3.5V -4.0V -4.5V -2.0V
6
0 0 1 2 3 4 5
0.8 0 5 10 15 20 25 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
- ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.15
1.6 ID = -3.5A VGS = -4.5V 1.4
ID = -1.7A 0.12
1.2
0.09 TA = 125 C
o
1
0.06 TA = 25 C
o
0.8
0.03
0.6 -50 -25 0 25 50 75 100
o
0 125 150 1.5 2 2.5 3 3.5 4 4.5 5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
30 VDS = -5V 24 125 C 18
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C
o
VGS = 0V 25 C
o
10 1 0.1 -55 C
o
TA = 125 C 25 C
o
o
12
0.01 0.001 0.0001 0.4 1.3 2.2 3.1 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
6
0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SI6923DQ Rev. A (W)
SI6923DQ
Typical Characteristics
5 ID = -3.5A 4 -15V 3 VDS = -5V -10V
1800 1500 1200 CISS 900 f = 1MHz VGS = 0 V
2 600 COSS 1 300 CRSS 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
0.01 TJ = 125o C
0.001
IF, FORWARD CURRENT (A)
IR, REVERSE CURRENT (A
1
0.0001
0 .1
TJ = 100 C TJ = 25 C
o
o
0.00001 TJ = 25 o C
0.000001
0 .0 1
0.0000001
0 .0 0 1 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 V F, F O R W AR D V O LT AG E (V )
0.00000001 0 5 10 15 20
V R , REV ERSE V OLTA GE (V )
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) + R JA R JA = 135 C/W P(pk) t1 t2 T J - T A = P * R JA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design.
SI6923DQ Rev. A (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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