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| 2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Drain-source voltage VDS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25C PD Tc=25C PD Operating and storage Tch temperature range Tstg Rating 200 20 80 20 355 2 45 +150 -55 to +150 Unit V A A V mJ W W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=1.6mH, Vcc=24V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=200V VGS=0V VGS=20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=100V ID=20A VGS=10V RGS=10 L=100H Tch=25C IF=20A VGS=0V Tch=25C IF=20A VGS=0V -di/dt=100A/s Tch=25C 20 0.93 250 2.90 1.40 Min. 200 1.0 Tch=25C Tch=125C Typ. 1.5 10 0.2 10 110 85 19.0 1700 290 185 10 45 225 120 Max. 2.0 500 0.5 100 150 100 2550 435 280 15 70 340 180 Units V V A mA nA m S pF 9.0 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.78 62.5 Units C/W C/W 1 2SK3262-01MR Characteristics Power Dissipation PD=f(Tc) 50 10 2 FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 40 D.C. 10 30 1 t= 1s 10s 100s PD [W] 1ms 20 ID [A] 10 0 10ms t 10 T D= t T 100ms 0 0 50 100 150 10 -1 10 0 10 1 10 2 10 3 Tc [C] VDS [V] Typical output characteristics ID=f(VDS):80s pulse test,Tc=25C 50 VGS=20V 15V 100 Typical transfer characteristics ID=f(VGS):80s pulse test,VDS=25V,Tch=25C 10V 40 5.0V 4.5V 4.0V 10 30 ID [A] 3.5V 20 3.0V 10 1 0 0 1 2 3 4 5 6 ID [A] 0.1 0 1 2 3 4 5 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 10 2 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80s pulse test,Tch=25C 0.22 0.20 0.18 0.16 VGS= 3.0V 3.5V 10 1 4.0V 0.14 4.5V RDS(on) [] gfs [s] 0.12 0.10 0.08 5.0V 10V 15V 20V 10 0 0.06 0.04 0.02 -1 10 10-1 0.00 10 0 10 1 10 2 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3262-01MR Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V 300 3.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 250 2.5 200 2.0 max. RDS(on)[m] 150 max. VGS(th) [V] 1.5 typ. typ. 100 1.0 min. 50 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz 100n 200 180 Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25C 20 18 VDS 160 140 VGS 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 10n 120 Vcc=160V 100V 40V VGS [V] VDS [V] Ciss 1n Coss Crss 100p 10 -2 C [F] 100 80 60 40 20 0 10 -1 10 0 10 1 10 2 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80s pulse test,Tch=25C 50 25 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive 40 20 30 15 I(AV) [A] 20 10 10 10V 5 VGS=0V 0 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 -ID [A] VSD [V] Starting Tch [C] 3 2SK3262-01MR Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,I <=20A,Non-Repetitive AV 500 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 10 1 D=0.5 400 10 0 0.2 0.1 0.05 300 Zth(ch-c) [C/W] 10 -1 0.02 0.01 Eas [mJ] 200 10 -2 t 0 T D= t T 100 10 -3 10 0 0 25 50 75 100 125 150 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Starting Tch [C] 4 |
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