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| +3 V/+5 V/5 V CMOS 4-/8-Channel Analog Multiplexers ADG658/ADG659 FEATURES 2 V to 6 V Dual Supply 2 V to 12 V Single Supply Automotive Temperature Range -40oC to +125oC <0.1 nA Leakage Currents 45 On Resistance over Full Signal Range Rail-to-Rail Switching Operation Single 8-to-1 Multiplexer ADG658 Differential 4-to-1 Multiplexer ADG659 16-Lead LFCSP/TSSOP Packages Typical Power Consumption <0.1 W TTL/CMOS Compatible Inputs Package Upgrades to 74HC4051/74HC4052 and MAX4051/MAX4052/MAX4581/MAX4582 APPLICATIONS Automotive Applications Automatic Test Equipment Data Acquisition Systems Battery-Powered Systems Communication Systems Audio and Video Signal Routing Relay Replacement Sample-and-Hold Systems Industrial Control Systems FUNCTIONAL BLOCK DIAGRAM ADG658 S1 S1A DA S4A D S1B DB S8 1 OF 8 DECODER S4B 1 OF 4 DECODER ADG659 A0 A1 A2 EN A0 A1 EN SWITCHES SHOWN FOR A LOGIC 1 INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG658 and ADG659 are low voltage, CMOS analog multiplexers comprised of eight single channels and four differential channels, respectively. The ADG658 switches one of eight inputs (S1-S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2. The ADG659 switches one of four differential inputs to a common differential output, as determined by the 2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched off. These parts are designed on an enhanced process that provides lower power dissipation yet gives high switching speeds. These parts can operate equally well as either multiplexers or demultiplexers and have an input range that extends to the supplies. All channels exhibit break-before-make switching action, preventing momentary shorting when switching channels. All digital inputs have 0.8 V to 2.4 V logic thresholds, ensuring TTL/ CMOS logic compatibility when using single +5 V or dual 5 V supplies. The ADG658 and ADG659 are available in 16-lead TSSOP packages and 16-lead 4 mm 4 mm LFCSP packages. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. 1. Single- and dual-supply operation. The ADG658 and ADG659 offer high performance and are fully specified and guaranteed with 5 V, +5 V, and +3 V supply rails. 2. Automotive temperature range -40 oC to +125oC. 3. Low power consumption, typically <0.1 W. 4. 16-lead 4 mm 4 mm LFCSP packages and 16-lead TSSOP package. One Technology Way, P Box 9106, Norwood, MA 02062-9106, U.S.A. .O. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) 2003 Analog Devices, Inc. All rights reserved. DUAL SUPPLY1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON ) ADG658/ADG659-SPECIFICATIONS DD = +5 V 10%, VSS = -5 V 10%, GND = 0 V, unless otherwise noted.) B Version -40C to +85C Y Version -40C to +125C VSS to V DD 90 3.2 17 100 3.5 18 +25C Unit V typ max typ max typ max nA typ nA max nA typ nA max nA max nA typ nA max nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ pC max dB typ Test Conditions/Comments V DD = +4.5 V, VSS = -4.5 V VS = 4.5 V, IS = 1 mA; Test Circuit 1 VS = 3.5 V, IS = 1 mA V DD = +5 V, VSS = -5 V; VS = 3 V, IS = 1 mA V DD = +5.5 V, VSS = -5.5 V V D = 4.5 V, VS = 4.5 V; Test Circuit 2 V D = 4.5 V, VS = 4.5 V; Test Circuit 3 V D = VS = 4.5 V; Test Circuit 4 On Resistance Match between Channels (RON ) ( On Resistance Flatness (R FLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage I D (OFF) ADG658 ADG659 Channel ON Leakage I D, IS (ON) ADG658 ADG659 DIGITAL INPUTS Input High Voltage, V INH Input Low Voltage, V INL Input Current I INL or I INH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tTRANS tON (EN) tOFF (EN) Break-Before-Make Time Delay, t BBM Charge Injection Off Isolation 2 45 75 1.3 3 10 16 0.005 0.2 0.005 0.2 0.1 0.005 0.2 0.1 5 5 2.5 5 2.5 2.4 0.8 0.005 1 2 80 115 80 115 30 45 50 2 4 -90 V IN = V INL or V INH 140 140 50 165 165 55 10 R L = 300 , CL = 35 pF VS = 3 V; Test Circuit 5 R L = 300 , CL = 35 pF VS = 3 V; Test Circuit 7 R L = 300 , CL = 35 pF VS = 3 V; Test Circuit 7 R L = 300 , CL = 35 pF VS1 = VS2 = 3 V; Test Circuit 6 VS = 0 V, R S = 0 , CL = 1 nF; Test Circuit 8 R L = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 Total Harmonic Distortion, THD + N Channel-to-Channel Crosstalk (ADG659) -3 dB Bandwidth ADG658 ADG659 CS (OFF) CD (OFF) ADG658 ADG659 CD, CS (ON) ADG658 ADG659 POWER REQUIREMENTS I DD ISS 0.025 -90 210 400 4 23 12 28 16 0.01 1 0.01 1 % typ dB typ MHz typ MHz typ pF typ pF typ pF typ pF typ pF typ A typ A max A typ A max RL = 600 , 2 V p-p, f = 20 Hz to 20 kHz R L = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 11 R L = 50 , CL = 5 pF; Test Circuit 10 f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz V DD = +5.5 V, VSS = -5.5 V Digital Inputs = 0 V or 5.5 V Digital Inputs = 0 V or 5.5 V NOTES 1Temperature range is as follows: B Version: -40C to +85C. Y Version: -40C to +125C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. 0 SINGLE SUPPLY Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON ) 1 ADG658/ADG659 (VDD = 5 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.) B Version -40C to +85C Y Version -40C to +125C 0 to VDD 160 9 14 200 10 16 +25C Unit V typ max typ max typ Test Conditions/Comments V DD = 4.5 V, VSS = 0 V VS = 0 V to 4.5 V, IS = 1 mA; Test Circuit 1 VS = 3.5 V, IS = 1 mA V DD = 5 V, VSS = 0 V VS = 1.5 V to 4 V, IS = 1 mA V DD = 5.5 V VS = 1 V/4.5 V, V D = 4.5 V/1 V; Test Circuit 2 VS = 1 V/4.5 V, V D = 4.5 V/1 V; Test Circuit 3 VS = V D = 1 V or 4.5 V, Test Circuit 4 On Resistance Match between Channels (RON ) ( On Resistance Flatness (R FLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage I D (OFF) ADG658 ADG659 Channel ON Leakage I D, IS (ON) ADG658 ADG659 DIGITAL INPUTS Input High Voltage, V INH Input Low Voltage, V INL Input Current I INL or I INH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tTRANS tON (EN) tOFF (EN) Break-Before-Make Time Delay, t BBM Charge Injection Off Isolation Channel-to-Channel Crosstalk (ADG659) -3 dB Bandwidth ADG658 ADG659 CS (OFF) CD (OFF) ADG658 ADG659 CD, CS (ON) ADG658 ADG659 POWER REQUIREMENTS I DD 2 85 150 4.5 8 13 0.005 0.2 0.005 0.2 0.1 0.005 0.2 0.1 5 5 2.5 5 2.5 2.4 0.8 nA typ nA max nA typ nA max nA max nA typ nA max nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ pC max dB typ dB typ MHz typ MHz typ pF typ pF typ pF typ pF typ pF typ A typ A max 0.005 1 2 120 200 120 190 35 50 100 0.5 1 -90 -90 180 330 5 29 15 30 16 0.01 1 V IN = V INL or V INH 270 245 60 300 280 70 10 R L = 300 , CL = 35 pF VS = 3 V; Test Circuit 5 R L = 300 , CL = 35 pF VS = 3 V; Test Circuit 7 R L = 300 , CL = 35 pF VS = 3 V; Test Circuit 7 R L = 300 , CL = 35 pF VS1 = VS2 = 3 V; Test Circuit 6 VS = 2.5 V, R S = 0 , CL = 1 nF; Test Circuit 8 R L = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 R L = 50 , CL = 5 pF; f = 1 MHz; Test Circuit 11 R L = 50 , CL = 5 pF; Test Circuit 10 f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz V DD = 5.5 V Digital Inputs = 0 V or 5.5 V NOTES 1Temperature range is as follows: B Version: -40C to +85C. Y Version: -40C to +125C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 -3- ADG658/ADG659-SPECIFICATIONS SINGLE SUPPLY1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON ) On Resistance Match between Channels (RON ) ( LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage I D (OFF) ADG658 ADG659 Channel ON Leakage I D, IS (ON) ADG658 ADG659 DIGITAL INPUTS Input High Voltage, V INH Input Low Voltage, V INL Input Current I INL or I INH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tTRANS tON (EN) tOFF (EN) Break-Before-Make Time Delay, t BBM Charge Injection Off Isolation Channel-to-Channel Crosstalk (ADG659) -3 dB Bandwidth ADG658 ADG659 CS (OFF) CD (OFF) ADG658 ADG659 CD, CS (ON) ADG658 ADG659 POWER REQUIREMENTS I DD 2 DD = 2.7 V to 3.6 V, VSS = 0 V, GND = 0 V, unless otherwise noted.) B Version -40C to +85C Y Version -40C to +125C 0 to V DD 350 6 400 7 +25C Unit V typ max typ max nA typ nA max nA typ nA max nA max nA typ nA max nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ pC max dB typ dB typ MHz typ MHz typ pF typ pF typ pF typ pF typ pF typ A typ A max Test Conditions/Comments V DD = 2.7 V, VSS = 0 V VS = 0 V to 2.7 V, IS = 0.1 mA; Test Circuit 1 VS = 1.5 V, IS = 0.1 mA V DD = 3.3 V VS = 1 V/3 V, V D = 3 V/1 V; Test Circuit 2 VS = 1 V/3 V, V D = 3 V/1 V; Test Circuit 3 VS = V D = 1 V or 3 V; Test Circuit 4 185 300 2 4.5 0.005 0.2 0.005 0.2 0.1 0.005 0.2 0.1 5 5 2.5 5 2.5 2.0 0.5 0.005 1 2 200 370 230 370 50 80 200 1 2 -90 -90 160 300 5 29 15 30 16 0.01 1 V IN = V INL or V INH 440 440 90 490 490 110 10 R L = 300 , CL = 35 pF VS = 1.5 V; Test Circuit 7 R L = 300 , CL = 35 pF VS = 1.5 V; Test Circuit 7 R L = 300 , CL = 35 pF VS = 1.5 V; Test Circuit 7 R L = 300 , CL = 35 pF VS1 = VS2 = 1.5 V; Test Circuit 6 VS = 1.5 V, R S = 0 , CL = 1 nF; Test Circuit 8 R L = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 R L = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 11 R L = 50 , CL = 5 pF; Test Circuit 10 f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz V DD = 3.6 V Digital Inputs = 0 V or 3.6 V NOTES 1Temperature range is as follows: B Version: -40C to +85C. Y Version: -40C to +125C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. -4- REV. 0 ADG658/ADG659 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C, unless otherwise noted.) VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 V VDD to GND . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +13 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to -6.5 V Analog Inputs2 . . . . . . . . . . . . . . VSS - 0.3 V to VDD + 0.3 V Digital Inputs2 . . . . . . . . . . . . GND - 0.3 V to VDD + 0.3 V or 10 mA, whichever occurs first Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . 40 mA (Pulsed at 1 ms, 10% duty cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . 20 mA Operating Temperature Range Automotive (Y Version) . . . . . . . . . . . . -40C to +125C Industrial (B Version) . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150C Impedance, 16-Lead TSSOP . . . . . 150.4C/W Impedance (4-Layer Board), 16-Lead LFCSP . . . . . . . . . . . . . . . . . . . . . . . . 70C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . 215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 kV JA Thermal JA Thermal NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2Overvoltages at A X, EN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG658/ ADG659 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recom mended to avoid per for mance deg radation or loss of functionality. ORDERING GUIDE Model ADG658YRU ADG658YCP ADG659YRU ADG659YCP Temperature Range -40C to +125C -40C to +85C -40C to +125C -40C to +85C Table I. ADG658 Truth Table Package Description Thin Shrink Small Outline Package (TSSOP) Lead Frame Chip Scale Package (LFCSP) Thin Shrink Small Outline Package (TSSOP) Lead Frame Chip Scale Package (LFCSP) Package Option RU-16 CP-16 RU-16 CP-16 PIN CONFIGURATIONS TSSOP S5 1 S7 2 D3 S8 4 16 15 14 A2 X 0 0 0 0 1 1 1 1 A1 X 0 0 1 1 0 0 1 1 A0 X 0 1 0 1 0 1 0 1 EN 1 0 0 0 0 0 0 0 0 Switch Condition NONE 1 2 3 4 5 6 7 8 VDD S3 S2 S1B 1 S3B 2 DB 3 S4B 4 16 15 14 VDD S3A S2A TOP VIEW 13 S1 S6 5 (Not to Scale) 12 S4 EN 6 VSS 7 GND 8 11 10 9 ADG658 TOP VIEW 13 DA S2B 5 (Not to Scale) 12 S1A EN 6 VSS 7 GND 8 11 10 9 ADG659 A0 A1 A2 S4A A0 A1 X = Don't Care LFCSP S7 S5 VDD S3B S1B VDD S2 S1 10 S4 9 A0 12 11 A1 X 0 0 1 1 X = Don't Care A0 X 0 1 0 1 EN 1 0 0 0 0 On Switch Pair NONE 1 2 3 4 D1 S8 2 S6 3 EN 4 16 15 14 13 16 15 14 13 ADG658 TOP VIEW (Not to Scale) DB 1 S4B 2 S2B 3 EN 4 S3A S2A DA 10 S1A 9 S4A 12 11 8 Table II. ADG659 Truth Table S3 ADG659 TOP VIEW (Not to Scale) 5 6 7 8 5 6 7 GND A2 A1 REV. 0 -5- GND A1 A0 VSS VSS ADG658/ADG659 TERMINOLOGY Parameter VDD VSS IDD ISS GND S D AX EN VD (VS) RON RON RFLAT(ON) IS (OFF) ID (OFF) ID, IS (ON) VINL VINH IINL(IINH) CS (OFF) CD (OFF) CD, CS (ON) CIN tON tOFF tBBM Description Most Positive Power Supply Potential. Most Negative Power Supply Potential. Positive Supply Current. Negative Supply Current. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Active Low Digital Input. When high, device is disabled and all switches are OFF. When low, AX logic inputs determine ON switch. Analog Voltage on Terminals D, S. Ohmic Resistance between D and S. On Resistance Match between Any Two Channels, i.e., RON max - RON min. Flatness is defined as the difference between the maximum and minimum value of ON Resistance as measured over the specified analog signal range. Source Leakage Current with the Switch OFF. Drain Leakage Current with the Switch OFF. Channel Leakage Current with the Switch ON. Maximum Input Voltage for Logic 0. Minimum Input Voltage for Logic 1. Input Current of the Digital Input. OFF Switch Source Capacitance. Measured with reference to ground. OFF Switch Drain Capacitance. Measured with reference to ground. ON Switch Capacitance. Measured with reference to ground. Digital Input Capacitance. Delay between Applying the Digital Control Input and the Output Switching ON. See Test Circuit 7. Delay between Applying the Digital Control Input and the Output Switching OFF. ON Time. Measured between 80% points of both switches when switching from one address state to another. Measure of the Glitch Impulse Transferred from the Digital Input to the Analog Output during Switching. Measure of Unwanted Signal Coupling through an OFF Switch. Measure of Unwanted Signal Coupled through from One Channel to Another as a Result of Parasitic Capacitance. The Frequency at which the Output is Attenuated by 3 dB. The Frequency Response of the ON Switch. The Loss Due to the ON Resistance of the Switch. Charge Injection Off Isolation Crosstalk Bandwidth On Response Insertion Loss -6- REV. 0 Typical Performance Characteristics-ADG658/ADG659 100 90 80 ON RESISTANCE - 70 60 50 40 30 20 10 0 -5.5 -3.5 -1.5 0.5 VD, VS - V 2.5 4.5 0 0 2 VDD, VSS = 5.5V VDD, VSS = 4.5V VDD, VSS = 3V TA = 25C VDD, VSS = 2.7V ON RESISTANCE - 200 ON RESISTANCE - 250 VDD = 2.7V TA = 25C 100 90 80 70 60 50 40 30 20 10 12 0 VDD = 5V VSS = -5V -5 -4 -3 -2 -1 0 1 VD, VS - V 2 3 4 5 -40C +125C +85C +25C 150 VDD = 3V VDD = 3.3V 100 VDD = 4.5V VDD = 5.5V VDD = 12V 4 6 8 VD, VS - V VDD = 5V VDD, VSS = 5V 50 VDD = 10V 10 TPC 1. On Resistance vs. VD (VS) for Dual Supply TPC 2. On Resistance vs. VD (VS) for Single Supply TPC 3. On Resistance vs. VD (VS) for Different Temperatures (Dual Supply) 140 120 ON RESISTANCE - 100 80 60 40 20 0 VDD = 5V VSS = 0V 0 300 +125C +85C ON RESISTANCE - 250 200 150 100 50 0 +85C +125C 1.5 1.0 0.5 CURRENT - nA 0 -0.5 -1.0 IS, ID (ON) -1.5 -2.0 1.0 1.5 2.0 VD, VS - V 2.5 3.0 -2.5 0 20 100 40 60 80 TEMPERATURE C 120 ID (OFF) VDD = 5V VSS = -5V VD = 4V VS = 4V IS (OFF) +25C +25C -40C VDD = 3V VSS = 0V 0 0.5 -40C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD, VS - V TPC 4. On Resistance vs. VD (VS) for Different Temperatures (Single Supply) TPC 5. On Resistance vs. VD (VS) for Different Temperatures (Single Supply) TPC 6. Leakage Currents vs. Temperature (Dual Supply) 1.5 1.0 0.5 CURRENT - nA 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 VDD = 3V VSS = 0V VD = 2.4V VS = 1V 20 40 60 80 100 TEMPERATURE C 120 ID (OFF) VDD = 5V VSS = 0V VD = 4V VS = 1V 14 12 IS (OFF) 10 8 QINJ - PC 6 4 2 0 -2 -4 140 TA = 25C 120 100 TIME - ns 80 60 40 VDD = 5V VSS = 0V -5 -4 -3 -2 -1 1 0 VS - V 2 3 4 5 20 0 -40 -20 VDD = +5V VSS = -5V tON IS, ID (ON) VDD = 5V VSS = -5V tOFF 0 20 40 60 80 TEMPERATURE - C 100 120 TPC 7. Leakage Currents vs. Temperature (Single Supply) TPC 8. Charge Injection vs. Source Voltage TPC 9. tON/tOFF Times vs. Temperature (Dual Supply) REV. 0 -7- ADG658/ADG659 350 300 250 TIME - ns 200 150 100 50 0 -40 -20 VDD = 5V VSS = 0V VDD = 3V 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 0 -2 -4 -6 -8 -10 dB -12 -14 -16 -18 VDD = +5V VSS = -5V TA = 25C 100k 1M 10M FREQUENCY - Hz 100M -20 -22 -24 VDD = +5V VSS = -5V TA = 25C 100k 1M 10M 100M FREQUENCY - Hz tON VDD = 3V tOFF 0 VDD = 5V 20 40 60 80 TEMPERATURE - C 100 120 TPC 10. tON/tOFF Times vs. Temperature (Single Supply) dB TPC 11. ON Response vs. Frequency (ADG658) TPC 12. ON Response vs. Frequency (ADG659) 0 -20 -40 dB dB -60 -80 -100 -120 VDD = +5V VSS = -5V TA = 25C 0 -10 -20 -30 -40 -60 -70 -80 -90 -100 -110 -120 -130 VDD = -5V VSS = +5V TA = 25C 100 600 IN AND OUT VDD = +5V VSS = -5V TA = 25C 10 THD + N - % 100k 1M 10M 100M FREQUENCY - Hz -50 1 0.1 100k 1M 10M 100M FREQUENCY - Hz 0.01 20 50 100 200 500 1k 2k 5k 10k 20k FREQUENCY - Hz TPC 13. OFF Isolation vs. Frequency TPC 14. Crosstalk vs. Frequency TPC 15. THD + Noise 10000 VSS = 0V 1000 VDD = 12V 100 IDD - A 10 1 0.1 0.01 VDD = 5V LOGIC THRESHOLD VOLTAGE - V 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0 VDD = 3V 0 2 4 6 8 V(EN) - V 0 2 4 6 VDD - V 8 10 12 TPC 16. VDD Current vs. Logic Level TPC 17. Logic Threshold Voltage vs. Supply Voltage -8- REV. 0 ADG658/ADG659 Test Circuits IDS VDD V1 VDD S1 S VS VS RON = V1/I DS D S2 S8 GND EN LOGIC 1 D VSS ID (OFF) A VO VSS Test Circuit 1. On Resistance Test Circuit 3. ID (OFF) VDD VDD S1 S2 S8 VD GND VSS VSS S1 S8 LOGIC 1 VS VDD VDD VSS VSS ID (ON) A VD IS (OFF) A VS D D EN GND EN Test Circuit 2. IS (OFF) Test Circuit 4. ID (ON) VDD VDD A2 VIN 50 A1 A0 VSS VSS S1 VS1 ADDRESS DRIVE (VIN) 3V 50% 0V VS8 RL 300 VOUT CL 35pF 50% S2 THRU S7 ADG658* EN GND S8 D VS1 VOUT VS8 90% 90% *SIMILAR CONNECTION FOR ADG659 tTRANSITION tTRANSITION Test Circuit 5. Switching Time of Multiplexer, tTRANSITION VDD VDD A2 VIN 50 A1 A0 VSS VSS S1 VS ADDRESS DRIVE (VIN) 0V 3V S2 THRU S7 ADG658* EN GND S8 D RL 300 CL 35pF VOUT VOUT 80% 80% *SIMILAR CONNECTION FOR ADG659 tBBM Test Circuit 6. Break-Before-Make Delay, tBBM REV. 0 -9- ADG658/ADG659 VDD VDD VSS VSS S1 S2-S8 VS ENABLE DRIVE (VIN) 0V 3V 50% 50% A2 A1 A0 ADG658* EN VIN 50 GND D RL 300 CL 35pF VOUT OUTPUT tOFF (EN) VO 0.9VO 0.9VO 0V *SIMILAR CONNECTION FOR ADG659 tON (EN) Test Circuit 7. Enable Delay, tON (EN), tOFF (EN) ( (EN EN * * Test Circuit 8. Charge Injection VDD 0.1F VDD S D LOGIC 1 EN GND RL 50 VSS 0.1F VSS NETWORK ANALYZER 50 50 VS VOUT VDD 0.1F VSS 0.1F A2 A1 A0 VDD A2 A1 A0 S VSS 50 VS D VOUT RL 50 EN GND OFF ISOLATION = 20 LOG VOUT VS INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Test Circuit 9. OFF Isolation VDD 0.1F VDD VSS EN VSS 0.1F Test Circuit 10. Bandwidth A1 A0 NETWORK ANALYZER 50 VS 50 ADG659 S1A S1B DB DA GND DA DB NETWORK ANALYZER VOUT RL 50 CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT VS Test Circuit 11. Channel-to-Channel Crosstalk -10- REV. 0 ADG658/ADG659 OUTLINE DIMENSIONS 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters 5.10 5.00 4.90 16 9 4.50 4.40 4.30 1 8 6.40 BSC PIN 1 0.15 0.05 0.65 BSC 0.30 0.19 COPLANARITY 0.10 1.20 MAX 0.20 0.09 SEATING PLANE 8 0 0.75 0.60 0.45 COMPLIANT TO JEDEC STANDARDS MO-153AB 16-Lead Lead Frame Chip Scale Package [LFCSP] 4 mm 4 mm Body (CP-16) Dimensions shown in millimeters 4.0 BSC SQ 0.60 MAX 0.60 MAX 0.65 BSC TOP VIEW 13 12 16 1 PIN 1 INDICATOR PIN 1 INDICATOR 3.75 BSC SQ 0.75 0.55 0.35 BOTTOM VIEW 9 4 8 5 2.25 1.70 SQ 0.75 12 MAX 1.00 0.90 0.80 1.00 MAX 0.65 NOM 0.05 MAX 0.02 NOM 1.95 BSC SEATING PLANE 0.38 0.30 0.23 0.20 REF COPLANARITY 0.08 COMPLIANT TO JEDEC STANDARDS MO-220-VGGC REV. 0 -11- -12- C03273-0-2/03(0) PRINTED IN U.S.A. |
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