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| DSSS 35-008AR Power Schottky Rectifier dual diode IFAV = 2x35 A VRRM = 80 V V F = 0.68 V VRSM V 80 VRRM V 80 Type A C/A C ISOPLUS 247TM DSSS 35-008AR C A/C A Isolated back surface * C = Cathode, A = Anode Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot FC VISOL Weight Conditions TC = 150C; rectangular, d = 0.5 TC = 150C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 35 A; L = 100 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Maximum Ratings 70 35 70 600 60 2 5000 -55...+175 175 -55...+150 A A A A mJ A V/s C C C W N V~ g Features * * * * * International standard package Very low VF Extremely low switching losses Low IRM-values Isolated and UL registered E153432 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses TC = 25C mounting force with clip 50/60 Hz, RMS, t = 1 s, leads-to-tab typical 190 20...120 3000 6 Dimensions see Outlines.pdf Symbol IR VF Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 35 A; IF = 35 A; IF = 70 A; TVJ = 125C TVJ = 25C TVJ = 125C 0.25 Characteristic Values typ. max. 4 10 0.68 0.79 0.86 0.8 mA mA V V V K/W K/W RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 1-2 510 DSSS 35-008AR A 100 IF IR 1 125C TVJ= 25C 100 mA 10 TVJ=175C 150C 10000 pF CT 0.1 100C 10 75C TVJ = 150C 125C 25C 1000 0.01 50C 0.001 25C 0.0001 100 0 10 20 30 40 50 60 70 VR V 0 10 20 30 40 50 60 70 V VR 1 0.0 0.2 0.4 0.6 0.8 1.0 V 1.2 VF Fig. 1 Max. forward voltage drop characteristics 80 A 60 IF(AV) 40 d = 0.5 DC 60 W 50 P(AV) 40 30 20 20 10 0 0 50 100 TC 150 C 200 0 Fig. 2 Typ. reverse current IR versus reverse voltage 10000 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR A IFSM d= DC 0.5 0.33 0.25 0.17 0.08 1000 0 10 20 30 40 50 IF(AV) A 60 70 100 10 100 1000 s 10000 tP Fig. 4 Avg. forward current IF(AV) vs. case temperature TC 1 K/W D = 0.5 0.33 Fig. 5 Forward power loss characteristics ZthJC 0.1 0.25 0.17 0.08 Single Pulse 0.01 1e-5 DSSS 35-008AR Note: All curves are per diode 1e-4 1e-3 1e-2 1e-1 1e+0 t s 1e+1 Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, test conditions and dimensions. 510 (c) 2005 IXYS All rights reserved 2-2 |
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